BD660CT [PANJIT]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管型号: | BD660CT |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BD640CT~BD6200CT
SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS
Unit : inch (mm)
TO-251AB
6.0 Amperes
40 to 200 Volts
CURRENT
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
• For surface mounted applications
• Low profile package
.216(5.5)
.200(5.1)
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• High temperature soldering guaranteed:260oC/10 seconds at terminals
.071(1.8)
.051(1.3)
.032(0.8)
.012(0.3)
• In compliance with EU RoHS 2002/95/EC directives
.02(0.5)
.09 .09
MECHANICALDATA
(2.3) (2.3)
• Case: TO-251AB molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Standard packaging: 16mm tape (EIA-481)
• Weight: 0.0104 ounces, 0.297grams.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
BD640CT
BD645CT BD650CT BD660CT BD680CT BD690CT BD6100CT BD6150CT BD6200CT
PARAMETER
SYMBOL
VRRM
UNITS
V
Maximum Recurrent Peak Reverse Voltage
40
45
31.5
45
50
35
50
60
42
60
80
56
90
63
90
100
70
150
105
150
200
140
200
Maximum RMS Voltage
VRMS
28
40
V
V
Maximum DC Blocking Voltage
VDC
80
100
Maximum Average Forward Current (See Figure 1)
IF(AV)
6.0
75
A
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IFSM
A
Maximum Forward Voltage at 3.0A per leg
VF
0.70
0.75
0.80
0.90
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
T
J
J
=25O
=100O
C
0.05
20
IR
mA
C
Typical Thermal Resistance
RθJC
5
O C
/ W
O C
-55 to +150
Operating Junction and Storage Temperature Range
TJ,TSTG
-65 to +175
Note: Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
BD640CT~BD6200CT
RATING AND CHARACTERISTIC CURVES
90
75
60
45
30
15
0
10.0
= 40V
= 45-200V
8.0
6.0
4.0
2..0
0
0
20
40
60
80
100 120 140 160 180
1
10
100
CASE TEMPERATURE, OC
NO. OF CYCLE AT 60Hz
Fig.2-MAXIMUMNON-REPETITIVEPEAK
FORWARD SURGECURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10
10
40-45V
TJ
=100OC
1.0
50-60V
TJ=
75OC
80-100V
1.0
0.1
.01
TJ=
25OC
150-200V
0.1
.001
0
20 40 60 80 100 120 140
0.40
0.60
0.80
1.00
1.20
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
FORWARD VOLTAGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
STAD-APR.30.2009
PAGE . 2
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