BSS8402DWT/R7 [PANJIT]
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS; 互补对增强型MOSFET
| 型号： | BSS8402DWT/R7 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS8402DW
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
This space-efficient device contains an electrically-isolated complimentary pair
of enhancement-mode MOSFETs (one N-channel and one P-channel). It
comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
portable applications where board space is at a premium.
SOT- 363
4
FEATURES
5
Complimentary Pairs
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
6
3
2
1
Available in lead-free plating (100% matte tin finish)
6
1
5
2
4
3
APPLICATIONS
Q
Q
Switching Power Supplies
Hand-Held Computers, PDAs
1
2
MARKING CODE: S82
T = 25°C Unless otherwise noted
MAXIMUM RATINGS - TOTAL DEVICE
J
Rating
Symbol
Value
200
-55 to +150
Units
mW
°C
P
Total Power Dissipation (Note 1)
D
Operating Junction and Storage Temperature Range
T , T
stg
J
T = 25°C Unless otherwise noted
MAXIMUM RATINGS N - CHANNEL - Q , 2N7002
J
1
Rating
Symbol
Value
60
Units
V
V
Drain-Source Voltage
DSS
Drain-Gate Voltage R < 1.0Mohm
V
V
60
V
GS
DGR
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
±20
115
V
GSS
I
mA
D
T = 25°C Unless otherwise noted
MAXIMUM RATINGS P - CHANNEL - Q2 , BSS84
J
Rating
Symbol
Value
-50
Units
V
V
Drain-Source Voltage
DSS
Drain-Gate Voltage R < 20Kohm
V
V
-50
V
GS
DGR
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
±20
130
V
GSS
I
mA
D
THERMAL CHARACTERISTICS
Symbol
Characteristic
Units
Value
Thermal Resistance, Junction to Ambient (Note 1)
R
625
°C/W
thja
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
9/15/2005
Page 1
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BSS8402DW
T = 25°C Unless otherwise noted
Electrical Characteristics - N-CHANNEL - Q , 2N7002
J
1
OFF CHARACTERISTICS (Note 2)
Parameter
Symbol
Conditions
Min
Typ
Max Units
BV
Drain-Source Breakdown Voltage
I = 10µA, V = 0V
60
-
80
-
-
V
DSS
GS
D
T =25°C
1.0
500
±10
J
I
µA
nA
V
= 60V, V = 0
DSS
DS
GS
T =125°C
-
-
J
I
-
-
Gate-Body Leakage
V
= ±20V, V = 0V
GSS
GS
DS
ON CHARACTERISTICS (Note 2)
Parameter
Gate Threshold Voltage
Symbol
Conditions
Min
1.0
-
Typ
1.6
1.8
2.0
1.65
-
Max Units
V
V
= V , I = 250µA
D
GS
2.5
4.5
7.0
-
V
GS(th)
DS
V
= 5V, I = 0.05A
D
GS
R
Static Drain-Source On-Resistance
Ohms
DS(ON)
-
V
= 10V, I = 0.5A
D
GS
I
On-State Drain Current
0.5
0.08
A
S
D(ON)
V
V
= 10V, V = 7.5V
DS
GS
g
= 10V, I = 0.2A
-
Forward Transconductance
D
FS
DS
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Symbol
Conditions
Min
Typ
Max Units
C
-
-
-
-
50
pF
iss
V
V
= 25V,
DS
= 0V,
C
oss
Output Capacitance
-
-
25
5.0
pF
pF
GS
f = 1.0MHz
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ
Max Units
Turn-On Delay Time
t
-
-
-
-
20
20
ns
ns
D(ON)
V =30V, I =0.2A, R =150ohm
L
DD
D
R
= 25ohm, V
= 10V
GEN
GEN
t
Turn-Off Delay Time
D(OFF)
Note 2. Short duration test pulse used to minimize self-heating
9/15/2005
Page 2
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BSS8402DW
T = 25°C Unless otherwise noted
Electrical Characteristics - P-CHANNEL - Q , BSS84
J
2
OFF CHARACTERISTICS (Note 3)
Parameter
Symbol
Conditions
Min
Typ
Max Units
BV
Drain-Source Breakdown Voltage
I = -250µA, V = 0V
-50
-
-
-
-
-
-
V
DSS
GS
D
V
= -50V, V = 0V, T =25°C
-
-
-
-
-15
-60
-0.1
±10
GS
J
DS
I
µA
nA
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
V
V
= -50V, V = 0V, T =125°C
DS
GS
J
DSS
= -25V, V = 0V, T =25°C
DS
GS
J
I
= ±20V, V = 0V
GSS
GS
DS
ON CHARACTERISTICS (Note 3)
Parameter
Gate Threshold Voltage
Symbol
Conditions
Min
-0.8
-
Typ
1.44
3.8
-
Max Units
-2.0
10 Ohms
V
V
= V , I = -1mA
V
GS(th)
DS
GS
D
R
Static Drain-Source On-Resistance
V
V
= -5V, I = -0.1A
DS(ON)
GS
D
g
0.05
-
S
Forward Transconductance
= -25V, I = -0.1A
FS
DS
D
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Symbol
Conditions
Min
Typ
Max Units
C
-
-
-
-
-
-
45
25
12
pF
pF
pF
iss
V
V
= -25V,
DS
= 0V,
C
oss
Output Capacitance
GS
f = 1.0MHz
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Symbol
Conditions
Min
Typ
7.5
25
Max Units
t
-
-
-
-
ns
ns
D(ON)
V
= -30V, I = -0.27A,
DD
D
R
= 50ohm, V = -10V
t
GEN
GS
Turn-Off Delay Time
D(OFF)
Note 3. Short duration test pulse used to minimize self-heating
9/15/2005
Page 3
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BSS8402DW
Typical Characteristics Curves - N-Channel - Q1 , 2N7002
T = 25°C Unless otherwise noted
J
1.2
1
0.8
0.6
0.4
0.2
0
VDS =10V
5.0V
4.0V
1
0.8
0.6
0.4
0.2
0
V= 6V, 7V, 8V, 9V, 10V
25oC
3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
V
DS - Drain-to-Source Voltage (V)
Fig. 1. Output Characteristics
Fig. 2. Transfer Characteristics
10
10
8
8
6
4
2
0
6
4
VGS 4.5V
=
Ids=500mA
Ids=50mA
2
VGS=10.0V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Fig. 3. On-Resistance vs. Drain Current
Fig. 4. On-Resistance vs. G-S Voltage
10
1.1
I =250 A
µ
VGS = 0V
D
1.05
1
0.1
1
0.95
0.9
oC
0.85
0.01
0.8
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1
1.2
1.4
TJ - Junction Temperature (oC)
Fig. 5. Threshold Voltage vs. Temperature
VSD - Source-to-DrainVoltage (V)
Fig. 6. Sourse-Drain Diode Forward Voltage
9/15/2005
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BSS8402DW
TJ = 25°C Unless otherwise noted
Electrical Characteristic Curves - P-Channel - Q , BSS84
2
1
0.8
0.6
0.4
0.2
0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS= 6V, 7V, 8V, 9V, 10V
5.0V
VDS =10V
4.0V
3.0V
25oC
0
1
2
3
4
5
0
1
2
3
4
5
6
7
-VGS - Gate-to-Source Voltage (V)
-VDS - Drain-to-Source Voltage (V)
Fig. 1. Output Characteristics
Fig. 2. Transfer Characteristics
10
8
10
8
6
4
2
0
V= 4.5V
6
Ids=-500mA
4
VGS=10.0V
2
Ids=-50mA
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
-ID - Drain Current (A)
-VGS - Gate-to-Source Voltage (V)
Fig. 3. On-Resistance vs. Drain Current
Fig. 4. On-Resistance vs. G-S Voltage
1.2
10
I =250 A
µ
D
VGS = 0V
1.1
1
1
25oC
0.1
0.9
0.01
0.4
0.8
-50 -25
0
25
50
75 100 125 150
0.6
0.8
1
1.2
1.4
TJ - Junction Temperature (oC)
-VSD - Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
9/15/2005
Fig. 6. Sourse-Drain Diode Forward Voltage
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Page 5
BSS8402DW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BSS8402DW T/R7: 7 inch reel, 3K units per reel, Pin 1 towards tape sprocket holes
BSS8402DW T/R7-R: 7 inch reel, 3K units per reel, Pin 1 away from tape sprocket holes
BSS8402DW T/R13: 13 inch reel, 10K units per reel, Pin 1 towards tape sprocket holes
BSS8402DW T/R13-R: 13 inch reel, 10K units per reel, Pin 1 away from tape sprocket holes
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
9/15/2005
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Page 6
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