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GMZJ3.3 [PANJIT]

SURFACE MOUNT ZENER DIODES; 表面贴装齐纳二极管
GMZJ3.3
型号： GMZJ3.3
厂家： PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述：

SURFACE MOUNT ZENER DIODES
表面贴装齐纳二极管

二极管 齐纳二极管
文件： 总5页 (文件大小：159K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DATA SHEET  
GMZJ2.0~GMZJ56  
SURFACE MOUNT ZENER DIODES  
Unit : inch (mm)  
MICRO-MELF  
VOLTAGE  
POWER  
500 mWatts  
2.0 to 56 Volts  
FEATURES  
• Planar Die construction  
• 500mW Power Dissipation  
• Ideally Suited for Automated Assembly Processes  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
Pb free: 98.5% Sn above  
.008(0.2)  
.043(1.1)  
.008(0.2)  
MECHANICAL DATA  
.079(2.0)  
.071(1.8)  
• Case: Molded Glass MICRO-MELF  
• Terminals: Solderable per MIL-STD-202E, Method 208  
• Polarity: See Diagram Below  
• Approx. Weight: 0.01 grams  
• Mounting Position: Any  
•
Packing information  
T/R - 2.5K per 7" plastic Reel  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Power Dissipation at Tamb = 25 OC  
Symbol  
Value  
500  
Units  
mW  
P
TOT  
Junction Temperature  
175  
OC  
OC  
T
J
Storage Temperature Range  
-65 to +175  
TS  
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.  
Parameter  
Symbol  
RthA  
Min.  
--  
Typ.  
--  
Max.  
Units  
Thermal Resistance Junction to Ambient Air  
0.3  
1
K/mW  
Forward Voltage at IF = 100mA  
--  
V
VF  
--  
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.  
STAD-SEP.14.2004  
PAGE . 1  
V
Z
@ IZT  
Max. V  
IZ  
VR  
(V)  
IR(uA)  
MAX  
Izt  
Z
MAX  
ZT(Ω)  
I
ZK  
(mA)  
Z
MAX  
ZK(Ω)  
Part Number  
GMZJ 2.0  
GMZJ 2.2  
GMZJ 2.4  
GMZJ 2.7  
GMZJ 3.0  
GMZJ 3.3  
GMZJ 3.6  
GMZJ 3.9  
CLASS  
(mA)  
(mA)  
Min. V  
1.88  
2.02  
2.12  
2.22  
2.33  
2.43  
2.54  
2.69  
2.85  
3.01  
3.16  
3.32  
3.455  
3.60  
3.74  
3.89  
4.04  
4.17  
4.30  
4.44  
4.55  
4.68  
4.81  
4.94  
5.09  
5.28  
5.45  
5.61  
5.78  
5.96  
6.12  
6.29  
6.49  
6.66  
6.85  
7.07  
7.29  
7.53  
7.78  
8.03  
8.29  
8.57  
8.83  
9.12  
9.41  
9.70  
9.94  
10.18  
10.50  
10.82  
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
2.10  
2.20  
2.30  
2.41  
2.52  
2.63  
2.75  
2.91  
3.07  
3.22  
3.38  
3.53  
3.695  
3.845  
4.01  
4.16  
4.29  
4.43  
4.57  
4.68  
4.80  
4.93  
5.07  
5.20  
5.37  
5.55  
5.73  
5.91  
6.09  
6.27  
6.44  
6.63  
6.83  
7.01  
7.22  
7.45  
7.67  
7.92  
8.19  
8.45  
8.73  
9.01  
9.30  
9.59  
9.90  
10.20  
10.44  
10.71  
11.05  
11.38  
5
5
5
5
5
5
5
5
0.5  
0.7  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
120  
100  
120  
100  
50  
5
5
5
5
5
5
5
5
100  
0.5  
1000  
100  
100  
110  
120  
120  
100  
100  
0.5  
0.5  
0.5  
0.5  
0.5  
1
1000  
1000  
1000  
1000  
1000  
1000  
1000  
20  
10  
5
1
GMZJ 4.3  
GMZJ 4.7  
GMZJ 5.1  
GMZJ 5.6  
GMZJ 6.2  
GMZJ 6.8  
GMZJ 7.5  
GMZJ 8.2  
GMZJ 9.1  
5
5
5
5
5
5
5
5
5
1.0  
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
5
5
5
5
5
5
5
5
5
5
5
100  
90  
80  
60  
60  
20  
20  
20  
25  
1
1
1000  
900  
800  
500  
300  
150  
120  
120  
120  
5
1
5
1
5
1
2
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
GMZJ 10  
GMZJ 11  
5
5
7.0  
8.0  
0.2  
0.2  
5
5
30  
30  
0.5  
0.5  
120  
120  
STAD-SEP.14.2004  
PAGE . 2  
V
Z
@ IZT  
Max. V  
IZ  
VR  
(V)  
IR(uA)  
MAX  
Izt  
Z
MAX  
ZT(Ω)  
I
ZK  
(mA)  
Z
MAX  
ZK(Ω)  
Part Number  
GMZJ 12  
CLASS  
(mA)  
(mA)  
Min. V  
11.13  
11.44  
11.74  
12.11  
12.55  
12.99  
13.44  
13.89  
14.35  
14.80  
15.25  
15.69  
16.22  
16.82  
17.42  
18.02  
18.63  
19.23  
19.72  
20.15  
20.64  
21.08  
21.52  
22.05  
22.61  
23.12  
23.63  
24.26  
24.97  
25.63  
26.29  
26.99  
27.70  
28.36  
29.02  
29.68  
30.32  
30.90  
31.49  
32.14  
32.79  
33.40  
34.01  
34.68  
35.36  
36.00  
36.63  
40.00  
44.00  
48.00  
53.00  
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
11.71  
12.03  
12.35  
12.75  
13.21  
13.66  
14.13  
14.62  
15.09  
15.57  
16.04  
16.51  
17.06  
17.70  
18.33  
18.96  
19.59  
20.22  
20.72  
21.20  
21.71  
22.17  
22.63  
23.18  
23.77  
24.31  
24.85  
25.52  
26.26  
26.95  
27.64  
28.39  
29.13  
29.82  
30.51  
31.22  
31.88  
32.50  
33.11  
33.79  
34.49  
35.13  
35.77  
36.47  
37.19  
37.85  
38.52  
45.00  
49.00  
54.00  
60.00  
5
5
5
5
5
9.0  
10  
11  
12  
13  
0.2  
0.2  
0.2  
0.2  
0.2  
5
5
5
5
5
30  
0.5  
110  
GMZJ 13  
GMZJ 15  
GMZJ 16  
GMZJ 18  
35  
40  
40  
45  
0.5  
0.5  
0.5  
0.5  
110  
110  
150  
150  
GMZJ 20  
GMZJ 22  
GMZJ 24  
GMZJ 27  
GMZJ 30  
GMZJ 33  
GMZJ 36  
GMZJ 39  
5
5
5
5
5
5
5
5
15  
17  
19  
21  
23  
25  
27  
30  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
5
5
5
5
5
5
5
5
55  
30  
35  
45  
55  
65  
75  
85  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
200  
200  
200  
250  
250  
250  
250  
250  
GMZJ 43  
GMZJ 47  
GMZJ 51  
GMZJ 56  
5
5
5
5
33  
36  
39  
43  
0.2  
0.2  
0.2  
0.2  
5
5
5
5
90  
90  
--  
--  
--  
--  
--  
--  
--  
--  
110  
110  
STAD-SEP.14.2004  
PAGE . 3  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
500  
400  
300  
1.3  
1.2  
1.1  
V
=V /V (25°C)  
Zt Z  
Ztn  
–4  
TK =10 x 10 /K  
VZ  
–4  
8 x 10 /K  
–4  
6 x 10 /K  
–4  
4 x 10 /K  
l
l
–4  
2 x 10 /K  
0
200  
100  
0
1.0  
0.9  
0.8  
–4  
–2 x 10 /K  
–4  
–4 x 10 /K  
T =constant  
L
20  
240  
0
5
10  
15  
–60  
0
60  
120  
180  
95 9611  
l – Lead Length ( mm )  
T – Junction Temperature (°C )  
j
95 9599  
Fig. 1 Thermal Resistance vs. Lead Length  
Fig. 4 Typical Change of Working Voltage vs. Junction  
Temperature  
600  
500  
15  
10  
400  
300  
200  
5
I =5mA  
Z
0
100  
0
–5  
200  
50  
0
40  
80  
120  
160  
0
10  
20  
30  
40  
T
amb  
– Ambient Temperature(°C )  
V – Z-Voltage ( V )  
Z
95 9602  
95 9600  
Fig. 2 Total Power Dissipation vs. Ambient Temperature  
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage  
1000  
200  
150  
T =25°C  
j
100  
10  
1
V
=2V  
R
T =25°C  
j
100  
I =5mA  
Z
50  
0
25  
25  
0
5
10  
15  
20  
0
5
10  
V – Z-Voltage ( V )  
Z
15  
20  
V
– Z-Voltage ( V )  
95 9598  
95 9601  
Z
Fig. 3 Typical Change of Working Voltage under Operating  
Conditions at T =25°C  
Fig. 6 Diode Capacitance vs. Z-Voltage  
amb  
STAD-SEP.14.2004  
PAGE . 4  
100  
10  
1
50  
40  
30  
P
T
=500mW  
=25°C  
amb  
tot  
T =25°C  
j
0.1  
0.01  
20  
10  
0
0.001  
1.0  
35  
0
0.2  
0.4  
0.6  
0.8  
15  
20  
25  
V – Z-Voltage ( V )  
Z
30  
V
– Forward Voltage ( V )  
95 9605  
95 9607  
F
Fig. 7 Forward Current vs. Forward Voltage  
Fig. 9 Z-Current vs. Z-Voltage  
100  
80  
1000  
I =1mA  
Z
P =500mW  
tot  
100  
10  
1
T
=25°C  
amb  
60  
5mA  
40  
20  
0
10mA  
T =25°C  
j
20  
25  
0
4
8
12  
16  
0
5
10  
15  
20  
V
– Z-Voltage ( V )  
V – Z-Voltage ( V )  
Z
95 9604  
95 9606  
Z
Fig. 8 Z-Current vs. Z-Voltage  
Fig. 10Differential Z-Resistance vs. Z-Voltage  
1000  
t /T=0.5  
p
100  
10  
1
t /T=0.2  
p
Single Pulse  
R
T=T  
=300K/W  
–T  
jmax amb  
thJA  
t /T=0.01  
p
t /T=0.1  
p
t /T=0.02  
p
t
/T=0.05  
2
1/2  
p
x
i
=(–V +(V +4r  
T/Z  
)
thp  
)/(2r )  
zj  
ZM  
Z
Z
zj  
–1  
0
1
2
10  
10  
10  
– Pulse Length ( ms )  
10  
t
p
95 9603  
Fig. 11Thermal Response  
STAD-SEP.14.2004  
PAGE . 5  

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