MBR1060F [PANJIT]

10 AMPERES SCHOTTKY BARRIER RECTIFIERS; 10安培肖特基二极管
MBR1060F
型号: MBR1060F
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

10 AMPERES SCHOTTKY BARRIER RECTIFIERS
10安培肖特基二极管

肖特基二极管 瞄准线 功效 局域网
文件: 总2页 (文件大小:92K)
中文:  中文翻译
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MBR1040F~MBR10200F  
10 AMPERES SCHOTTKY BARRIER RECTIFIERS  
VOLTAGE  
10 Amperes  
40 to 200 Volts  
CURRENT  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
• High current capability  
• Guardring for overvlotage protection  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: ITO-220AC molded plastic  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.055 ounces, 1.5615 grams.  
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR1040F MBR1045F MBR1050F MBR1060F MBR1080F MBR1090F MBR10100F MBR10150F MBR10200F  
PARAMETER  
SYMBOL  
VR R M  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VR M S  
V
V
A
Maximum DC Blocking Voltage  
V
DC  
100  
Maximum Average Forward Current (See  
fig.1)  
I
F(AV)  
10  
Peak Forward Surge Current :8.3ms single  
half sine-wave superimposed on rated  
load(JEDEC method)  
I
FSM  
150  
A
V
Maximum Forward Voltage at 10A, per leg  
V
F
0.7  
0.75  
0.8  
0.9  
Maximum DC Reverse Current TJ=25 OC  
0.05  
20  
I
R
mA  
at Rated DC Blocking Voltage TJ=125O  
Typical Thermal Resistance  
C
O C  
W
/
RθJC  
3.0  
Operating and Storage Junction  
Temperature Range  
O C  
-55 to  
+ 150  
T
J
,TSTG  
-65 to + 175  
Notes :  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-APR.30.2009  
MBR1040F~MBR10200F  
RATING AND CHARACTERISTIC CURVES  
100  
20.0  
= 40V  
= 45-200V  
40-45V  
16.0  
10  
50-60V  
12.0  
8.0  
80-100V  
150-200V  
1.0  
RESISTIVE OR  
4.0  
INDUCTIVE LOAD  
0
A C  
=25O  
0
20  
40  
60  
80  
100 120 140 160 180  
T
0.1  
0.4  
0.6  
0.8  
1.0  
1.2  
CASE TEMPERATURE, O  
C
FORWARD VOLTAGE, VOLTS  
Fig.2- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTIC  
Fig.1- FORWARD CURRENT DERATING CURVE  
10  
200  
175  
TJ  
=100OC  
1.0  
8.3ms Single Half Since-Wave  
JEDEC Method  
150  
TJ=  
75OC  
125  
100  
75  
50  
25  
0
0.1  
.01  
TJ=  
25OC  
1
2
5
10  
20  
50  
100  
.001  
0
20 40 60 80 100 120 140  
NO. OF CYCLE AT 60Hz  
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)  
Fig.4- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
Fig.3- TYPICAL REVERSE CHARACTERISTICS  
PAGE . 2  
STAD-APR.30.2009  

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