MBR16200CT [PANJIT]

SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器
MBR16200CT
型号: MBR16200CT
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SCHOTTKY BARRIER RECTIFIERS
肖特基势垒整流器器

二极管 瞄准线 功效 局域网
文件: 总2页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR1640CT~MBR16200CT  
SCHOTTKY BARRIER RECTIFIERS  
40 to 200 Volts  
VOLTAGE  
CURRENT 16 Amperes  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
.058(1.47)  
.042(1.07)  
MECHANICALDATA  
• Case: TO-220AB molded plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.0655 ounces, 1.859 grams.  
MAXIMUM RATINGS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR1640CT  
40  
MBR1645CT  
45  
MBR1650CT  
50  
MBR1660CT  
60  
MBR1680CT  
80  
MBR1690CT  
90  
MBR16100CT  
100  
MBR16150CT  
150  
MBR16200CT  
200  
PARAMETER  
SYMBOL  
VR  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
R
M
Maximum RMS Voltage  
VR  
28  
40  
31.5  
45  
35  
50  
42  
60  
56  
63  
90  
70  
105  
150  
140  
200  
V
V
M
S
Maximum DC Blocking Voltage  
Maximum Average Forward (See Figure 1)  
VD  
80  
100  
C
IF  
16  
150  
A
( A V  
)
Peak Forward Surge Current  
superimposed on rated load(JEDEC method)  
: 8.3ms single half sine-wave  
IF  
A
S
M
Maximum Forward Voltage at 8.0A per leg  
VF  
IR  
0.70  
0.75  
0.80  
0.90  
V
Maximum DC Reverse Current at TJ =25O  
C
0.05  
20  
mA  
Rated DC Blocking Voltag TJ =100O  
C
O C  
W
/
Typical Thermal Resistance  
Rθ J C  
2.0  
O C  
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ ,TS  
-65 to +175  
T G  
NOTES:Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-APR.30.2009  
MBR1640CT~MBR16200CT  
RATING AND CHARACTERISTIC CURVES  
40  
20.0  
= 40V  
= 45-200V  
40-45V  
10  
8
16.0  
6
4
12.0  
8.0  
50-60V  
2
80-100V  
150-200V  
1.0  
.8  
.6  
.4  
RESISTIVE OR  
INDUCTIVE LOAD  
4.0  
0
TJ = 25OC  
Pulse Width = 300ms  
1% Duty Cycle  
.2  
0
20  
40  
60  
80  
100 120 140 160 180  
.1  
1.1  
.4  
.5  
.6  
.7  
.8 0.9 1 0  
.
CASE TEMPERATURE, O  
C
INSTANTANEOUSFORWARD VOLTAGE, VOLTS  
Fig.2- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
Fig.1- FORWARD CURRENT DERATING CURVE  
10  
240  
TJ  
=100OC  
210  
1.0  
8.3ms Single  
Half Since-Wave  
JEDEC Method  
180  
TJ=  
75OC  
150  
120  
90  
60  
30  
0
0.1  
.01  
TJ=  
25OC  
1
2
5
10  
20  
50  
100  
.001  
0
20 40 60 80 100 120 140  
NO. OF CYCLE AT 60Hz  
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)  
Fig.4- MAXIMUM NON - REPETITIVE SURGE  
CURRENT  
Fig.3- TYPICAL REVERSE CHARACTERISTICS  
PAGE . 2  
STAD-APR.30.2009  

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