MBR1680FCT [PANJIT]
ISOLATION SCHOTTKY BARRIER RECTIFIERS; 隔离肖特基二极管型号: | MBR1680FCT |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | ISOLATION SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBR1640FCT~MBR16200FCT
ISOLATION SCHOTTKY BARRIER RECTIFIERS
40 to 200 Volts
VOLTAGE
CURRENT 16 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: ITO-220AB full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
.027(.67)
.022(.57)
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR1640FCT
40
MBR1645FCT
45
MBR1650FCT
50
MBR1660FCT
60
MBR1680FCT
80
MBR1690FCT MBR16100FCT MBR16150FCT MBR16200FCT
PARAMETER
SYMBOL
VR
UNITS
V
Maximum Recurrent Peak Reverse Voltage
90
63
90
100
70
150
105
150
200
140
200
R
M
Maximum RMS Voltage
VR
28
40
31.5
45
35
50
42
60
56
V
V
M
S
Maximum DC Blocking Voltage
Maximum Average Forward (See Figure 1)
VD
80
100
C
IF
16
150
A
( A V
)
Peak Forward Surge Current
: 8.3ms single half sine-wave
IF
A
S
M
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 8.0A per leg
VF
IR
0.70
0.75
0.80
0.90
V
Maximum DC Reverse Current at TJ =25O
C
0.05
20
mA
Rated DC Blocking Voltag TJ =100O
C
O C
W
/
Typical Thermal Resistance
Rθ J C
2.0
O C
-55 to +150
Operating Junction and Storage Temperature Range
TJ ,TS
-65 to +175
T G
NOTES : Both Bonding and Chip structure are available.
STAD-APR.30.2009
PAGE . 1
MBR1640FCT~MBR16200FCT
RATING AND CHARACTERISTIC CURVES
40
20.0
= 40V
= 45-200V
40-45V
10
8
16.0
6
4
12.0
8.0
50-60V
2
80-100V
150-200V
1.0
.8
.6
.4
RESISTIVE OR
INDUCTIVE LOAD
4.0
0
TJ = 25OC
Pulse Width = 300ms
1% Duty Cycle
.2
0
20
40
60
80
100 120 140 160 180
.1
1.1
.4
.5
.6
.7
.8 0.9 1 0
.
CASE TEMPERATURE, O
C
INSTANTANEOUSFORWARD VOLTAGE, VOLTS
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.1- FORWARD CURRENT DERATING CURVE
10
240
TJ
=100OC
210
1.0
8.3ms Single
Half Since-Wave
JEDEC Method
180
TJ=
75OC
150
120
90
60
30
0
0.1
.01
TJ=
25OC
1
2
5
10
20
50
100
.001
0
20 40 60 80 100 120 140
NO. OF CYCLE AT 60Hz
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.4- MAXIMUM NON - REPETITIVE SURGE
CURRENT
Fig.3- TYPICAL REVERSE CHARACTERISTICS
PAGE . 2
STAD-APR.30.2009
相关型号:
MBR1680FCT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 80V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
MCC
MBR1680FCT-BP-HF
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 80V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
MCC
MBR1680FCTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 80V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220AB, 3 PIN
MCC
MBR1690CT
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
©2020 ICPDF网 联系我们和版权申明