MBR20200CT [PANJIT]

20 AMPERES SCHOTTKY BARRIER RECTIFIERS; 20安培肖特基二极管
MBR20200CT
型号: MBR20200CT
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

20 AMPERES SCHOTTKY BARRIER RECTIFIERS
20安培肖特基二极管

肖特基二极管 局域网
文件: 总2页 (文件大小:83K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR2040CT~MBR20200CT  
20 AMPERES SCHOTTKY BARRIER RECTIFIERS  
VOLTAGE  
20 Amperes  
CURRENT  
40 to 200 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
• High current capability  
• Guardring for overvlotage protection  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
.058(1.47)  
.042(1.07)  
MECHANICALDATA  
• Case: TO-220AB molded plastic  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.0655 ounces, 1.859 grams.  
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR2040CT MBR2045CT MBR2050CT MBR2060CT MBR2080CT MBR2090CT MBR20100CT MBR20150CT MBR20200CT  
PARAMETER  
SYMBOL  
VR R M  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VR M  
V
V
A
A
V
S
Maximum DC Blocking Voltage  
Maximum Average Forward Current (See fig.1)  
VD  
80  
100  
C
IF  
20  
( A V  
)
Peak Forward Surge Current :8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
IF  
200  
S
M
Maximum Forward Voltage at 10A, per leg  
Maximum DC Reverse Current TJ=25 OC  
VF  
0.7  
0.75  
0.8  
0.9  
0.05  
20  
IR  
mA  
at Rated DC Blocking Voltage TJ=125O  
C
O C  
W
/
Typical Thermal Resistance  
RθJC  
2
O C  
-50 to  
+ 150  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-65 to +175  
Notes :  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-APR.30.2009  
MBR2040CT~MBR20200CT  
RATING AND CHARACTERISTIC CURVES  
20.0  
= 40V  
= 45-200V  
240  
210  
180  
150  
120  
90  
16.0  
8.3ms Single  
Half Since-Wave  
JEDEC Method  
12.0  
8.0  
RESISTIVE OR  
INDUCTIVE LOAD  
4.0  
0
60  
30  
0
20  
40  
60  
80  
100 120 140 160 180  
0
1
2
5
10  
20  
50  
100  
LEAD TEMPERATURE, OC  
NO. OF CYCLE AT 60Hz  
Fig.2- MAXIMUM NON - REPETITIVE SURGE  
CURRENT  
Fig.1- FORWARD CURRENT DERATING CURVE  
10  
40  
40-45V  
TJ  
=100OC  
1.0  
10  
8
6
50-60V  
4
TJ=  
75OC  
80-100V  
2
0.1  
.01  
150-200V  
1.0  
.8  
.6  
TJ=  
25OC  
.4  
TJ = 25OC  
Pulse Width = 300us  
1% Duty Cycle  
.2  
.1  
.001  
.4  
.5  
.6  
.7  
.8  
0.9 1.0 1.1  
0
20 40 60 80 100 120 140  
FORWARD VOLTAGE, VOLTS  
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)  
Fig.4- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
Fig.3- TYPICAL REVERSE CHARACTERISTICS  
PAGE . 2  
STAD-APR.30.2009  

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