MBR845 [PANJIT]

SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器
MBR845
型号: MBR845
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SCHOTTKY BARRIER RECTIFIERS
肖特基势垒整流器器

二极管 功效 局域网
文件: 总2页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR840~MBR8200  
SCHOTTKY BARRIER RECTIFIERS  
8 Amperes  
CURRENT  
VOLTAGE  
40 to 200 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
.058(1.47)  
.042(1.07)  
MECHANICALDATA  
• Case: TO-220AC plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.0655 ounces, 1.859 grams.  
MAXIMUM RATINGS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR840  
MBR845 MBR850 MBR860 MBR880 MBR890 MBR8100 MBR8150 MBR8200  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
8
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VRMS  
28  
40  
V
Maximum DC Blocking Voltage  
Maximum Average Forward (See Figure 1)  
VDC  
100  
V
IF(AV)  
A
A
Peak Forward Surge Current : 8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
IFSM  
150  
Maximum Forward Voltage at 8.0A  
VF  
0.70  
0.75  
0.80  
0.90  
V
Maximum DC Reverse Current TJ=25O  
C
0.05  
20  
IR  
mA  
O C / W  
O C  
at Rated DC Blocking Voltage TJ=100O  
C
Typical Thermal Resistance  
RθJC  
3
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-65 to +175  
NOTES : Both Bonding and Chip structure are available.  
STAD-APR.30.2009  
PAGE . 1  
MBR840~MBR8200  
RATING AND CHARACTERISTIC CURVES  
150  
120  
110  
90  
10.0  
= 40V  
= 45-200V  
8.3ms Single  
Half Since-Wave  
JEDEC Method  
8.0  
6.0  
4.0  
70  
50  
2.0  
0
30  
20  
0
20  
40  
60  
80  
100 120 140 160 180  
10  
1
2
5
10  
20  
50  
100  
CASE TEMPERATURE, O  
C
NO. OF CYCLE AT 60Hz  
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT  
Fig.1- FORWARD CURRENT DERATING CURVE  
10  
40  
40V~45V  
TJ  
=100OC  
1.0  
10  
8
6
50V~60V  
4
TJ=  
75OC  
80V~100V  
0.1  
.01  
2
1.0  
.8  
.6  
.4  
150V~200V  
TJ=  
25OC  
.2  
.1  
.5  
.6  
.7  
.8  
.9  
1.0  
1.1  
1.2  
.001  
0
20 40 60 80 100 120 140  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)  
Fig.4- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
Fig.3- TYPICAL REVERSE CHARACTERISTICS  
PAGE . 2  
STAD-APR.30.2009  

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