MMBT5401 [PANJIT]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | MMBT5401 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总5页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5401
HIGH VOLTAGE TRANSISTOR
PNP Silicon
FEATURES
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case : SOT-23 plastic case.
• Terminals : Solderable per MIL-STD-750,Method 2026
• Standard packaging : 8mm tape
• Weight : approximately 0.008gram
• Marking : M5A
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
-150
UNITS
Vdc
Collector-Emitter Voltage
V
V
V
CEO
CBO
EBO
Collector-Base Voltage
Emitter-Base Voltage
-160
-5.0
Vdc
Vdc
Collector Current-Continuous
I
C
-500
mAdc
Maximum ratings are those values beyound which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously.If these limits are exceeded, device functional operational
is not implied, damage may occur and reliability may be affected.
PNP
Fig.35
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PAGE . 1
MMBT5401
THERMALCHARACTERISTICS
CHARACTERISTIC
SYMBOL
MAX
225
UNITS
mW
Total Device Dissipation
FR-4 Board (Note 1)
P
D
TA
=25oC
Derate Above 25oC
1.8
556
300
mW/oC
oC/W
mW
Thermal Resistance,
Junction-to-Ambient
RΘJA
Total Device Dissipation
Alumina Substrate (Note 2)
P
D
TA
=25oC
Derate Above 25oC
2.4
mW/oC
oC/W
Thermal Resistance
Junction-to-Ambient
RΘJA
417
Junction and Storage Temperature
TJ
,TSTG
-55 to +150
oC
1.FR-4 = 70 X 60 X 1mm
2.Alumina = 0.4 X 0.3 X 0.024 in 99.5% alumina
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
CHARACTERISTIC
SYMBOL
MIN
MAX
UNITS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR
)
CEO
-150
-160
-5.0
-
-
-
Vdc
Vdc
Vdc
(I
Collector-Base Breakdown Voltage
(I =-100µAdc,I =0)
Emitter-Base Breakdown Voltage
(I =-10µAdc,I =0)
Collector Cutoff Current
C=-1.0mAdc,I B=0)
V(BR
)
CBO
C
E
V(BR
)
EBO
E
C
nAdc
µAdc
(VCB=-120Vdc, I
(VCB=-120Vdc, I
E
=0)
=0, T
I
CES
-
-
-50
-50
E
A
=100oC)
ON CHARACTERISTICS
DC Current Gain
(I
(I
(I
C
C
C
=-1.0mAdc, VCE=-5.0Vdc)
=-10mAdc, VCE=-5.0Vdc)
=-50mAdc, VCE=-5.0Vdc)
50
60
50
-
240
-
hFE
-
Collector-Emitter Saturation Voltage
(I
(I
C
=-10mAdc, I
=-50mAdc, I
B
=-1.0mAdc)
=-5.0mAdc)
V
V
CE(SAT)
BE(SAT)
-
-
-0.2
-0.5
Vdc
Vdc
C
B
Base-Emitter Saturation Voltage
(I
(I
-
-
-1.0
-1.0
C
=-10mAdc, I
=-50mAdc, I
B
=-1.0mAdc)
=-5.0mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
100
300
6.0
MHz
pF
-
(I
Output Capacitance
(VCB=-10Vdc, I =0, f=1.0MHz)
Small Signal Current Gain
(I =-1.0mAdc, VCE=-10Vdc, f=1.0kHz)
Noise Figure
(I =-200µAdc, VCE=-5.0Vdc, Rs=10Ω, f=1.0kHz)
C=-10mAdc, VCE=-10Vdc, f=100MHz)
C
OBO
-
40
-
E
hFE
200
8.0
C
NF
dB
C
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PAGE . 2
MMBT5401
REV.0.0-OCT.20.2008
PAGE . 3
MMBT5401
REV.0.0-OCT.20.2008
PAGE . 4
MMBT5401
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2008
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-OCT.20.2008
PAGE . 5
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