PJA45N02 [PANJIT]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | PJA45N02 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJA45N02
20V N-CHANNEL ENHANCEMENT MODE MOSFET
20 Volts
3.6 Amperes
CURRENT
VOLTAGE
FEATURES
• RDS(ON), VGS@1.8V,ID@1.5A<87m
• RDS(ON), VGS@4.5V,ID@3.6A<40m
0.120(3.04)
0.110(2.80)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
0.056(1.40)
0.047(1.20)
• Low Gate Charge
• ILead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.008(0.20)
0.003(0.08)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
0.004(0.10)
0.000(0.00)
0.044(1.10)
0.035(0.90)
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 45
0.020(0.50)
0.013(0.35)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA=25OC unless otherwise noted )
PARAMETER
SYMBOL
V DS
LIMIT
20
UNITS
V
Drain-Source Voltage
Gate-Source Voltage
VGS
+8
V
A
Steady-State
Steady-State
TA=25OC
TA=70OC
2.9
2.3
Continuous Drain Current (Notes 1)
Pulsed Drain Current (Notes 1)
Power Dissipation (Notes 1)
ID
IDM
10
A
Steady-State
Steady-State
TA=25OC
TA=70OC
700
400
PD
mW
OC/W
OC
Typical Thermal Resistance (Notes 1)
RJA
178
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
NOTES:
1. Mounted on minimum pad layout.
2. Mounted on 48cm2 FR-4PCB.
March 28,2013-REV.00
PAGE . 1
PJA45N02
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted )
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS=0V, ID=250A
VDS=VGS, ID= 250A
VGS= 4.5V, I D= 3.6A
20
-
0.6
40
47
55
65
-
-
1
V
V
VGS(th)
0.5
-
-
-
-
-
-
-
V
V
V
GS= 2.5V, I D= 3.1A
GS= 1.8V, I D= 1.5A
GS= 1.5V, I D= 1.0A
53
87
-
Drain-Source On-State Resistance
RDS(on)
m
Zero Gate Voltage Drain C urrent
Gate -Source Leakage Current
Dynamic
IDSS
VDS= 16V, VGS=0V
0.5
+100
A
IGSS
VGS= +8V, VDS=0V
-
nA
Forward Transconductance
Total Gate Charge
gFS
VDS= 5V, ID= 3.1A
-
-
-
-
-
-
-
-
-
-
-
-
11
6.5
0.6
0.8
1.5
5
-
-
-
-
-
-
-
-
-
-
-
-
S
Qg(
TOT
)
Threshold Gate Charge
Gate-Source Charge
Gate-Drain C harge
Qg(
TH)
VDS= 10V, ID= 2.7A
VGS= 4.5V
nC
Qgs
Qgd
tdon
tdoff
tr
Turn-On D elay Ti me
Turn-Off D elay Time
Turn-On R ise Time
30
6
VDD= 10V , VGS= 4.5V,
RG= 6RL= 3
ns
Turn-Off F all Ti me
tf
8
Input C apacitance
Ciss
Coss
Crss
500
68
VDS= 10V, VGS=0V
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Source-Drain D iode
Diode Forward Voltage
pF
60
VSD
IS= 1 A, V GS=0V
-
0.62
1.2
V
March 28,2013-REV.00
PAGE . 2
PJA45N02
5.0
4.0
3.0
2.0
1.0
0.0
VDS=10V
TJ=125oC
TJ=25oC
0
0.5
1
1.5
2
2.5
VGS-Gate-to-Source Voltage(V)
Fig.2 Transfer Characteristics
Temperature (C)
I-Drain-to-Source Current(A)
120
10.0
8.0
6.0
4.0
ID=3.5A
100
80
60
40
20
0
TJ=25oC
TJ=125oC
TJ=25oC
2.0
0.0
0.0
2.0
4.0
6.0
8.0
10.0
0
0.2
0.4
0.6
0.8
1
1.2
vSD-Source-to-Drain voltage(V)
VGS-Gate-to-Source Voltage(V)
Fig.5 On-Resistsnce vs. VGS vs Temperature
Fig.6 Body Dlode Characterlslcs
si
Fig.7 Threshold Voltage Variation with Temperature
March 28,2013-REV.00
PAGE . 3
PJA45N02
MOUNTING PAD LAYOUT
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
March 28,2013-REV.00
PAGE . 4
PJA45N02
Part No_packing code_Version
PJA45N02_R1_00001
PJA45N02_R2_00001
For example :
RB500V-40_R2_00001
Serial number
Part No.
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code XX
Version Code XXXXX
Packing type
1st Code
Packing size code
2nd Code HF or RoHS 1st Code 2nd~5th Code
Tape and Ammunition Box
(T/B)
A
R
B
T
S
L
F
N/A
7"
0
1
HF
0
1
serial number
serial number
Tape and Reel
(T/R)
RoHS
Bulk Packing
(B/P)
13"
2
Tube Packing
(T/P)
26mm
52mm
X
Y
U
D
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
FORMING
March 28,2013-REV.00
PAGE . 5
PJA45N02
Disclaimer
Reproducing and modifying information of the document is prohibited without permission
from Panjit International Inc..
•
•
Panjit International Inc. reserves the rights to make changes of the content herein the
document anytime without notification. Please refer to our website for the latest
document.
Panjit International Inc. disclaims any and all liability arising out of the application or use of
any product including damages incidentally and consequentially occurred.
•
•
•
Panjit International Inc. does not assume any and all implied warranties, including warranties
of fitness for particular purpose, non-infringement and merchantability.
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
or life-sustaining, such as medical instruments, transportation equipment, aerospace
machinery et cetera. Customers using or selling these products for use in such applications
•
•
do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages
resulting from such improper use or sale.
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking
when complaining.
March 28,2013-REV.00
PAGE . 6
相关型号：
©2020 ICPDF网 联系我们和版权申明