PJD15N06L [PANJIT]
60V N-Channel Enhancement Mode MOSFET; 60V N沟道增强型MOSFET
| 型号： | PJD15N06L |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 60V N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJD15N06L
60V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@10A=40mΩ
• RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 15N06L
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol
VDS
Limit
60
Units
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS
+20
15
V
A
ID
1)
Pulsed Drain Current
IDM
60
A
TA=25OC
TA=75OC
38
22
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
OC
Avalanche Energy with Single Pulse
ID=21A, VDD=30V, L=0.5mH
EAS
120
3.3
50
mJ
OC/W
OC/W
Junction-to-Case Thermal Resistance
Rθ JC
Junction-to Ambient Thermal Resistance(PCB mounted)2
Rθ JA
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1
PJD15N06L
ELECTRICALCHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
BVDSS
VGS(th)
RDS(on)
RDS(on)
IDSS
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=8.0A
60
1
-
-
-
3
V
V
-
36
32
-
50
40
1
mΩ
VGS=10V, ID=10A
-
VDS=60V, VGS=0V
-
uA
nA
S
IGSS
VGS=+20V, VDS=0V
VDS=10V, ID=10A
-
-
+100
-
Forward Transconductance
gfS
20
-
Dynamic
VDS=30V,ID=10A,VGS=5V
-
-
-
-
-
-
-
-
-
-
-
17.20
32.5
3.6
-
Total Gate Charge
Qg
-
nC
VDS=30V, ID=10A
GS=10V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Td(on)
trr
-
-
V
5.4
Turn-On Delay Time
Turn-On Rise Time
13.2
5.8
16.5
7.6
55
7.8
-
VDD=30V , RL=30Ω
ID=1A , VGEN=10V
RG=3.6Ω
ns
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
42
tf
6.2
Input Capacitance
Ciss
Coss
Crss
1750
130
80
VDS=25V, VGS=0V
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
-
pF
-
Is
-
-
-
-
10
A
V
VSD
IS=10A , VGS=0V
0.9
1.2
V
DD
VDD
Switching
Test Circuit
Gate Charge
Test Circuit
RL
RL
V
IN
VGS
V
OUT
1mA
RG
RG
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PAGE . 2
PJD15N06L
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
50
50
40
30
20
10
0
V
GS=10V, 6.0V, 5.0V, 4.5V, 4.0V
V
DS=10V
40
30
20
10
0
3.5V
3.0V
=125OC
TJ
=-55OC
T
J
2.5V
T
J
=25OC
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
FIG.1-OutputCharacteristic
FIG.2- Transfer Characteristic
120
100
80
80
70
60
50
ID =10A
V
GS=4.5V
O
T =125 C
40
30
20
10
0
J
60
V
GS=10V
40
J O
T=25 C
20
2
4
6
8
10
0
10
20
30
40
50
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
1.9
V
I
GS=10V
1.7
1.5
1.3
1.1
0.9
0.7
0.5
D
=10A
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature (oC)
FIG.5- On Resistance vs Junction Temperature
STAD-JUN.19.2006
PAGE . 3
PJD15N06L
10
8
V
DS=30V
=10A
Vgs
I
D
Qg
6
4
2
Qsw
Vgs(th)
Qg(th)
0
0
5
10
15
20
25
30
35
Qg - Gate Charge (nC)
Qgs
Qgd
Qg
Fig.6 - Gate Charge Waveform
Fig.7 - Gate Charge
1.3
73
71
69
67
65
63
61
59
ID=250uA
ID=250uA
1.2
1.1
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
100
V
GS=0V
10
1
TJ
=125OC
TJ
=25OC
T
J
=-55OC
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
LEGALSTATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUN.19.2006
PAGE . 4
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