PJQA6V2 [PANJIT]

Transient Voltage Suppressors for ESD Protection; 瞬态电压抑制器ESD保护


型号：	PJQA6V2
厂家：	PAN JIT INTERNATIONAL INC.
描述：	Transient Voltage Suppressors for ESD Protection 瞬态电压抑制器ESD保护
文件：	总4页 (文件大小：163K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PJQA6V2

Transient Voltage Suppressors for ESD Protection

This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvolatge

protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers,

printers, business machines, communication systems, medical equipment, and other applications. Its quad

junction common anode design protects four separate lines using only one package. These devices are ideal

for situations where board space is at a premiun.

4.3 Volts

VOLTAGE

POEWR

150 Watts

FEATURES

• In compliance with EU RoHS 2002/95/EC directives

MECHANCALDATA

Case: SOT23-6L Molded plastic

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

THERMAL CHARACTERISTICS (TA=25^OC unless otherwise noted)

Characteristic

Peak Power Dissipation @ 1.0ms @ T

<25^oC

Symbol

Value

Unit

Peak Power Dissipation @ 20 µs @ T

150

225

1.8

Total Power Dissipation on FR-4 Board@ T

mW/^oC

Thermal Resistance from Junction - to -Ambient

RΘ

556

^oC/W

Total Power Dissipation on Alumina Substrate @ T

above 25^oC

<25^oC Derate

300

2.4

mW/^oC

Thermal Resistance from Junction - to -Ambient

Junction and Storage Temperature Range

417

-55 to + 150

260

^oC/W

^oC

TJ,TSTG

Lead Solder Temperature - Maximum (10 Second Duration)

^oC

ELECTRICAL CHARACTERISTICS (TA=25^OC unless otherwise noted)

Max Reverse

Voltage @

Max Reverse

Max Zener

Impedance

Max Reverse

Surge Current

Maximum

Temperature

Coefficient of V

Breakdown Voltage

ZT(V)

Leakage

Current

RSM

Device

@IZT

ZT@IZT

RSM

Ω

Min

Nom

6.2

Max

6.51

mV/^oC

10.6

PJQA6V2

5.89

1.0

700

4.3

300

9.5

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REV.0.1-FEB.16.2009

PJQA6V2

300

10,000

1,000

250

200

150

100

BIASED AT 0 V

BIASED AT 1 V

BIASED AT 50%

OF V NOM

+150°C

100

+25°C

−40°C

5.6

6.8

5.6

6.8

V , NOMINAL ZENER VOLTAGE (V)

Figure 1. Typical Capacitance

Figure 2. Typical Leakage Current

100

300

250

200

ALUMINA SUBSTRATE

150

100

FR-5 BOARD

100

125

150

175

200

100

125

150

175

T , AMBIENT TEMPERATURE (°C)

Figure 3. Steady State Power Derating Curve

Figure 4. Pulse Derating Curve

100

PULSE WIDTH (t ) IS DEFINED

AS THAT POINT WHERE THE

PEAK VALUE I

@ 8 ms

RSM

PEAK CURRENT DECAYS TO 50%

PULSE WIDTH (t ) IS DEFINED

AS THAT POINT WHERE THE

OF I

PEAK VALUEꢀ−ꢀI

RSM

100

t ≤ 10 ms

PEAK CURRENT DECAY = 8 ms

HALF VALUE I /2 @ 20 ms

RSM

HALF VALUEꢀ−

t, TIME (ms)

Figure 5. 10 × 1000 ms Pulse Waveform

Figure 6. 8 × 20 ms Pulse Waveform

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REV.0.1-FEB.16.2009

PJQA6V2

200

180

160

140

100

RECTANGULAR

WAVEFORM, TA = 25°C

8 × 20 WAVEFORM AS PER FIGURE 6

120

100

UNIDIRECTIONAL

10 × 100 WAVEFORM AS PER FIGURE 5

1.0

0.1

1.0

100

1000

5.6

6.8

NOMINAL V

PW, PULSE WIDTH (ms)

Figure 7. Maximum Non−Repetitive Surge

Power, Ppk versus PW

Figure 8. Typical Maximum Non−Repetitive

Surge Power, Ppk versus V_BR

Power is defined as V_RSMx I_Z(pk) where V_RSM

is the clamping voltage at I_Z(pk).

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REV.0.1-FEB.16.2009

PJQA6V2

MOUNTING PAD LAYOUT

ORDER INFORMATION

• Packing information

T/R - 10K per 13" plastic Reel

T/R - 3K per 7” plastic Reel

LEGAL STATEMENT

The information presented in this document is believed to be accurate and reliable. The specifications and information herein

are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit

does not convey any license under its patent rights or rights of others.

REV.0.1-FEB.16.2009

PAGE . 4

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