PJQMF05LC [PANJIT]
5-TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION; 5 - TVS /齐纳阵列，用于ESD和闭锁保护
| 型号： | PJQMF05LC |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 5-TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJQMF05LC
5-TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 5-TVS/Zener Array has been designed to Protect Sensitive Equipment
against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5Vdc and below. This TVS array offers an integrated solution to
protect up to 5 data lines where the board space is a premium.
6
5
4
SPECIFICATION FEATURES
100W Power Dissipation (8x20µsec Waveform)
2
3
1
Low Leakage Current, Maximum of 2µA @ 5Vdc
Very Low Clamping Voltage, Max of 10V @ 9Apk 8x20µsec
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Max off state Capacitance of 90pF @ 0Vdc 1 MHz
New SMT package QFN 1.6mm x 1.6mm; Max Height of 0.75mm
6
5
4
Same Footprint compared to the SOT563
1
2
3
APPLICATIONS
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
3
2
1
Mobile Phones and Accessories
Memory Card Port Protection
4
5
6
QFN 1.6x1.6 sq mm Package
MAXIMUM RATINGS (Per Device)
Units
Rating
Peak Pulse Power (8x20µsec Waveform)
Peak Pulse Current (8x20µsec Waveform)
ESD Voltage (HBM)
Symbol
Value
P
I
100
10
pp
W
A
pp
V
>25
kV
°C
°C
ESD
T
-55 to +125
-55 to + 150
Operating Temperature Range
Storage Temperature Range
J
T
stg
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C
Parameter
Conditions
Min Typical Max
Units
Symbol
Reverse Stand-Off Voltage
V
5
V
V
WRM
V
I
=
=
=
=
1 mA
5V
6
7.2
2.0
9
Reverse Breakdown Voltage
Reverse Leakage Current
BR
BR
I
V
R
µA
V
R
V
cl
I
I
5A
Clamping Voltage (8x20µsec)
Clamping Voltage (8x20µsec)
pp
pp
V
cl
9A
10
V
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Off State Junction Capacitance
Off State Junction Capacitance
90
45
pF
pF
Cj
Cj
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2
1/26/2004
Page
1
www.panjit.com
PJQMF05LC
25°C unless otherwise noted
TYPICAL CHARACTERISTICS
Non-Repetitive Peak Pulse Power vs Pulse Time
Pulse Waveform
1000
100
10
110
100
90
80
70
60
50
40
30
20
10
0
50% of Ipp @20µs
Risetime10-90%- 8µs
1
10
100
1000
0
5
10
15
20
25
30
Pulse Duration, µsec
time, µsec
Capacitance vs. Biasing Voltage @1MHz
Clamping Voltage vs Ipp 8x20µsec Surge
100
90
80
70
60
50
40
30
10
9
8
7
6
5
4
3
2
1
0
6
7
8
9
10
11
0
1
2
3
4
5
Clamping Voltage, V
Bias Voltage, Vdc
1/26/2004
Page 2
www.panjit.com
PJQMF05LC
TYPICAL APPLICATION EXAMPLE
I/O Data lines
1
2
3
4
5
Ground (Pin 2)
1/26/2004
Page 3
www.panjit.com
PJQMF05LC
PACKAGE DIMENSIONS AND SUGGESTED BOND PAD LAYOUT
BOTTOM VIEW
TOP VIEW
0.50 ± 0.05 mm
0.20 ± 0.05mm
1.60 ± 0.05 mm
0.20 ± 0.05mm
1.1 ± 0.05mm
1.60 ± 0.05mm
0.6 ± 0.05mm
SIDE VIEW
0.203 ± 0.05 mm
0.75 ± 0.05 mm
PREFERRED
ALTERNATE
0.25 ± 0.05 mm
0.25 ± 0.05 mm
0.40 ± 0.05 mm
0.40 ± 0.05 mm
0.90 ± 0.05 mm
1.0 ± 0.05 mm
0.55mm
1.00 ± 0.05 mm
0.50 ± 0.05 mm
0.50 ± 0.05 mm
1/26/2004
Page 4
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