PJSD03TS [PANJIT]
120W, LOW CLAMPING VOLTAGE TVS FOR PROTECTION IN PORTABLE ELECTRONICS; 120W ，低钳位电压TVS保护便携式电子产品
| 型号： | PJSD03TS |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 120W, LOW CLAMPING VOLTAGE TVS FOR PROTECTION IN PORTABLE ELECTRONICS |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJSD03TS SERIES
120W, LOW CLAMPING VOLTAGE TVS FOR PROTECTION
IN PORTABLE ELECTRONICS
This tiny but powerful TVS/Zener Seires has been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS
circuitry operating at 3.3V, 5V, 12V, 15V 24V and 36V .These devices come in the
new standard SOD523 package making them suitable for Portable/Computing
Electronics, where the board space is a premium.
SPECIFICATION FEATURES
120W Power Dissipation (8/20µs Waveform)
Very Low Leakage Current, Maximum of 5µA @ V
RWM
IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance
SOD523 Package
K
A
APPLICATIONS
MP3 Players
SOD523
Digital Cameras
GPS
Mobile Phones and Accessories
Notebook PC's
MAXIMUM RATINGS
Units
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Symbol
Value
120
P
pp
W
kV
°C
°C
V
25
ESD
T
J
-55 to +150
-55 to +150
Operating Temperature Range
Storage Temperature Range
T
stg
Tj = 25°C
ELECTRICAL CHARACTERISTICS
Parameter
Conditions
Min Typical Max
Units
Symbol
Reverse Stand-Off Voltage
V
RWM
3.3
V
V
V
I
=
=
=
1mA
4.0
200
6.5
200
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
BR
BR
I
V
R
µA
V
3.3V
5 A
R
V
c
I
pp
pF
Cj
0 Vdc Bias f = 1MHz
3.3 Vdc Bias f = 1MHz
Off State Junction Capacitance
Cj
100
pF
3/16/2006
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1
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PJSD03TS SERIES
Tj = 25°C
Conditions
ELECTRICAL CHARACTERISTICS
Parameter
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
5
RWM
V
I
=
=
=
1mA
5V
6
V
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
BR
BR
I
V
R
5
µA
V
R
V
c
I
5 A
9
pp
110
pF
Cj
Cj
0 Vdc Bias f = 1MHz
5 Vdc Bias f = 1MHz
Off State Junction Capacitance
60
pF
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
12
RWM
V
I
=
=
=
1mA
12V
5 A
13.3
V
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
BR
BR
I
V
R
5
µA
V
R
V
c
I
17
60
pp
pF
Cj
0 Vdc Bias f = 1MHz
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
15
RWM
V
I
=
=
=
1mA
15V
5 A
16.6
V
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
BR
BR
I
V
R
5
µA
V
R
V
c
I
22
50
pp
pF
Cj
0 Vdc Bias f = 1MHz
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
24
RWM
V
I
=
=
=
1mA
24V
3 A
26.7
V
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
BR
BR
I
V
R
5
µA
V
R
V
c
I
32
25
pp
pF
Cj
0 Vdc Bias f = 1MHz
Parameter
Conditions
Min Typical Max
Units
V
Symbol
Reverse Stand-Off Voltage
V
36
RWM
V
I
=
=
=
1mA
36V
1 A
40
V
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
BR
BR
I
V
R
5
µA
V
R
V
c
I
55
20
pp
pF
Cj
0 Vdc Bias f = 1MHz
3/16/2006
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PJSD03TS SERIES
PACKAGE DIMENSIONS AND BOND PAD LAYOUT
3/16/2006
Page 3
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