PJSRV05-4_09 [PANJIT]
LOW CAPACITANCE TVS DIODE ARRAY; 低电容TVS二极管阵列
| 型号： | PJSRV05-4_09 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | LOW CAPACITANCE TVS DIODE ARRAY |
| 文件： | 总4页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJSRV05-4
LOW CAPACITANCE TVS DIODE ARRAY
The PJSRV05-4 has a low capacitance of 2.1pF and operates with virtually no insertion loes to 1GHz. This makes
the device ideal for protection of high-speed data lines such as USB2.0,firewire,DVI,and gigabit Ethernet interfaces.
The low capacitance array configuration allows the user to protect Four high-speed data or transmission lines.The
low inductance construction minimizes voltage overshoot during high current surges. They may be used to meet
the ESD immunity requirements of IEC61000-4-2,Level 4(15kV air,8kV contact discharge).
5 Volts
VOLTAGE
POWER
350Watts
FEATURES
• IEC61000-4-2 ESD 15kV Air, 8kV Contact compliance
• Low leakage current,maximum of 1A at rated voltage
• Low clamping voltage
• Peak power dissipation of 350W under 8/20 s waveform
• Protect four I/O lines
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT23-6L, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Weight: approximately 0.013gram
• Marking : 054
APPLICATIONS
• USB 2.0 Power and Date Line Protection
• Video Graphics Cards
• Mounitors and Flat Panel Displays
• Digital Vedio Interface (DVI)
• 10/100/1000 Ethernet
• ATM Interfaces
MAXIMUM RATINGS
Rating
Symbol
Value
350
Units
W
Peak Pulse Power (8/20 μs Waveform)
PPP
Peak Pulse Current (8/20 μs Waveform)
I
PPM
12
>8
A
ESD Voltage (HBM Contact)
V
ESD
kV
OC
Operating Junction and Storage Temperature Range
T
J
,TSTG
-55 to +150
REV.0.2-JUL.8.2009
PAGE . 1
PJSRV05-4
Parameter
Symbol
Condition
Min.
-
Typ.
-
Max.
5
Unit
V
Reverse Stand-Off Voltage
VWRM
I
BR=1mA,
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20s)
Clamping Voltage (8/20s)
V
BR
R
6
-
-
1.2
-
-
V
A
V
PIN 5 to 2
V
R=5V,
I
5
PIN 5 to 2
I
PP=1A,ANY I/O
V
V
C
C
-
12
17
pin to pin 2
I
PP=5A,ANY I/O
-
-
V
pin to pin 2
0Vdc, f=1.0MH
Z
Off State Junction Capacitance
Off State Junction Capacitance
C
C
J
J
between I/O
lines and GND
-
-
1.1
1.2
pF
pF
0Vdc, f=1.0MH
between I/O
lines
Z
0.55
0.60
REV.0.2-JUL.8.2009
PAGE . 2
PJSRV05-4
100
90
80
70
60
50
100
90
tr
PEAK VALUE I RSM@8ms
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
80
70
PEAK CURRENT DECAY=8ms
60
HALF VALUE I RSM/2@20ms
50
40
30
40
30
20
10
0
tp
20
10
0
0
20
40
60
80
0
25
50
75 100 125 150 175 200
,AMBIENT TEMPERATURE(oC)
Fig 1.Power Derating Curve
t,TIME(ms)
T
A
Fig 2. 8x20mms Pulse Waveform
1.4
1.3
1.2
1.1
20
18
16
14
12
1.0
0.9
0.8
10
8
0.7
0.6
6
4
0.5
0.4
2
0
0
10
20
30
40
50
0
1
2
3
4
V
BR,REVERSE VOLTAGE (V)
PEAK PULSE CURRENT(A)
Fig 4. Clamping Voltage vs Peak PPuullssee CCuurrrreenntt
((88x20 Waveform)
Fig 3. Junction Capacitance vs Reverse VVoollttaaggee
10
3.5
3.0
2.5
1
2.0
1.5
Waveform
Parameters :
0.1
1.0
tr=8ms
0.5
td=20ms
0
0.01
0
1
2
3
4
5
6
7
0.1
1
10
100
1000
PULSE DURATION-tp(mms)
Fig 5. Non-Repetitive Peak Pulse vs. PPuullssee TTiimmee
PEAK PULSE CURRENT(A)
Fig 6. Forward Voltage vs. Foorrwwaarrdd CCuurrrreenntt
REV.0.2-JUL.8.2009
PAGE . 3
PJSRV05-4
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.8.2009
PAGE . 4
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