PJSRV05W-4_06 [PANJIT]

Low Capacitance TVS and Diode Array; 低电容TVS二极管阵列
PJSRV05W-4_06
型号: PJSRV05W-4_06
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

Low Capacitance TVS and Diode Array
低电容TVS二极管阵列

二极管 电视
文件: 总4页 (文件大小:587K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PJSRV05W-4  
LOW CAPACITANCE TVS DIODE ARRAY  
The PJSRV05W-4 has a low typical capacitance of 1.8pF  
and operates with virtually no insertion loss to 1GHz. This makes  
the device ideal for protection of high-speed data lines such as USB 2.0,  
Firewire, DVI, and Gigabit Ethernet interfaces.  
The low capacitance array configuration allows the user to protect four  
high-speed data or transmission lines. The low inductance construction  
minimizes voltage overshoot during high current surge.  
SOT-363  
SPECIFICATION FEATURES  
ϥ IEC61000-4-2 ESD 15kV Air, 8kV Contact compliance  
ϥ Low leakage current,maxiimum of 0.5uA at rated voltage  
ϥ Low clamping voltage  
ϥ Peak power dissipation of 150W under 8/20us waveform  
ϥ Protect four I/O lines.  
ϥ Molded JEDEC SOT-363 package  
ϥ Flammability rating UL94V-0  
CONFIGURATION  
ϥ Lead Free package 100% tin plating matt finish  
APPLICATIONS  
ϥ USB 2.0 Power and Data Line Protection  
ϥ Video Graphics Cards  
ϥ Monitors and Flat Panel Displays  
ϥ Digital Vedio Interface (DVI)  
ϥ 10/100/1000 Ethernet  
ϥ ATM Interfaces  
MARKING  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
PPP  
Peak Pulse Power (8/20us waveform)  
150  
W
IPPM  
VESD  
TJ  
Peak Pulse Current (8/20us waveform)  
ESD Voltage (HBM Contact)  
6
A
>8  
kV  
Operating Temperature Range  
Storage Temperature Range  
-55~+150  
-55~+150  
к
к
TSTG  
12/01/2006  
Page 1  
www.panjit.com  
PJSRV05W-4  
ELECTRICAL CHARACTERISTICS (T
J
=25к)  
PJSRV05W-4  
Parameter  
Reverse Stand-Off Voltage  
Condition  
Symbol  
VWRM  
VBR  
Min.  
Typ.  
Max.  
Unit  
V
5
IBR=1mA,  
PIN 5 to 2  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage (8/20us)  
Clamping Voltage (8/20us)  
6
V
VR=5V,  
PIN 5 to 2  
IR  
1
3
uA  
V
IPP=1A, Any I/O  
pin to Pin 2  
VC  
15  
25  
IPP=6A, Any I/O  
pin to Pin 2  
VC  
V
0Vdc, f=1MHZ  
between I/O  
lines and GND  
CJ  
CJ  
Off State Junction Capacitance  
Off State Junction Capacitance  
2
1
pF  
pF  
0Vdc, f=1MHZ  
between I/O  
lines  
12/01/2006  
Page 2  
www.panjit.com  
PJSRV05W-4  
TYPICAL CHARACTERISTICS CURVES  
Figure 1. Power Derating Curve  
Figure 2. 8x20us Pulse Waveform  
Figure 3. Junction Capacitance vs Reverse  
Voltage  
Figure 4. Clamping Voltage vs Peak Pulse  
Current (8x20 Waveform)  
Figure 5. Non-Repetitive Peak Pulse vs.  
Pulse Time  
Figure 6. Forward Voltage vs. Forward  
Current  
12/01/2006  
Page 3  
www.panjit.com  
PJSRV05W-4  
PACKAGE AND SUGGESTED PAD LAYOUT DIMENSION  
LEGAL STATEMENT  
12/01/2006  
Page 4  
www.panjit.com  

相关型号:

PJSRV05W-4_09

LOW CAPACITANCE TVS DIODE ARRAY
PANJIT

PJSUB208

Low Capacitance Diode Array
PANJIT

PJT138K

50V N-Channel Enhancement Mode MOSFET – ESD Protected
PANJIT

PJT138K_14

50V N-Channel Enhancement Mode MOSFET – ESD Protected
PANJIT

PJT138L

60V N-Channel Enhancement Mode MOSFET
PANJIT

PJT36VC

TRIPLE COMMON CATHODE TRANSIENT VOLTAGE SUPPRESSOR ARRAY
PANJIT

PJT36VC_06

TRIPLE COMMON CATHODE TRANSIENT VOLTAGE SUPPRESSOR ARRAY
PANJIT

PJT5V0BQG

TRIPLE BI-DIRECTIONAL TVS ARRAY FOR ESD PROTECTION
PANJIT

PJT7413

20V P-Channel Enhancement Mode MOSFET – ESD Protected
PANJIT

PJT7600

Advanced Trench Process Technology
PANJIT

PJT7600_R1_00001

20V Complementary Enhancement Mode MOSFET . ESD Protected
PANJIT

PJT7600_R2_00001

20V Complementary Enhancement Mode MOSFET . ESD Protected
PANJIT