PJU2N70 [PANJIT]
700V N-Channel Enhancement Mode MOSFET; 700V N沟道增强型MOSFET
| 型号： | PJU2N70 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 700V N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJF2N70 / PJU2N70
ITO-220AB/TO-251
ITO-220AB
700V N-Channel Enhancement Mode MOSFET
FEATURES
TO-251
• 700V, RDS(ON)=5.5ꢀ@VGS=10V, ID=2A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
2
D
G
2
S
1
G
3
D
S
MECHANICAL DATA
INTERNAL SCHEMATIC DIAGRAM
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
MARKING
F2N70
PACKAGE
ITO-220AB
TO-251
PACKING
50PCS/TUBE
80PCS/TUBE
Gate
PJF2N70
PJU2N70
U2N70
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
VDS
PJF2N70
PJU2N70
Units
V
700
+30
Gate-Source Voltage
VGS
ID
V
A
A
Continuous Drain Current
2
8
2
8
1)
Pulsed Drain Current
IDM
PD
TA=25OC
Maximum Power Dissipation
Derating Factor
20
0.16
31
0.25
W
OC
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
EAS
-55 to +150
140
Avalanche Energy with Single Pulse
IAS=2A, VDD=50V, L=45mΗ
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
RθJC
RθJA
6.25
62.5
4
OC/W
OC/W
100
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
STAD-NOV.24.2009
PAGE . 1
PJF2N70 / PJU2N70
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
BVDSS
VGS(th)
700
2.0
-
-
-
V
V
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
Gate Threshold Voltage
4.0
Drain-Source On-State
Resistance
RDS(on)
-
5.5
6.5
ꢀ
VGS= 10V, I D= 1A
Zero Gate Voltage Drain
Current
I DSS
I GSS
-
-
-
-
10
uA
VDS=700V, VGS=0V
Gate Body Leakage
+100
nΑ
VGS=+30V, VDS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Qg
-
-
-
-
-
-
-
-
-
10.8
2.1
-
-
VDS=560V, ID=2A
Q
nC
ns
gs
V
GS=10V
Q
4.5
-
gd
t
11.2
10.8
22.4
16.8
338
28.6
18
16
31
24
395
65
d(on)
t
r
VDD=350V ,ID =2A
VGS=10V , RG=25ꢀ
t
d(off)
t
f
C
iss
VDS=25V, VGS=0V
f=1.0MHZ
C
pF
oss
Reverse Transfer
Capacitance
C
-
2.4
3.6
rss
Source-Drain Diode
Max. Diode Forward Current
I S
-
-
-
-
-
-
-
2.0
8.0
1.4
-
A
A
-
Max.Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SM
VSD
-
-
V
IS=2A , VGS=0V
t
260
1.09
ns
uC
rr
VGS=0V, IF=2A
di/dt=100A/us
Q
-
rr
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
STAD-NOV.24.2009
PAGE . 2
PJF2N70 / PJU2N70
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
4
10
VDS=40V
VGS= 20V~ 6.0V
3.5
3
2.5
5.0V
2
TJ = 125oC
1
25oC
1.5
1
-55oC
0.5
0
0.1
0
5
10
15
20
25
30
2
3
4
5
6
7
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
ID =1A
VGS=10V
TJ =25oC
VGS = 20V
0
1
2
3
4
5
2
4
6
8
10
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
2.5
500
VGS =10 V
ID =1.0A
f = 1MHz
VGS = 0V
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
400
Ciss
300
200
100
Coss
Crss
0
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TJ - Junction Temperature (oC)
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
Fig.5 On Resistance vs Junction Temperature
STAD-NOV.24.2009
PAGE. 3
PJF2N70 / PJU2N70
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
100
10
12
VGS = 0V
ID =2A
10
V
DS=480V
V
DS=300V
8
6
4
2
0
TJ = 125oC
V
DS=120V
1
25oC
-55oC
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
8
10
12
VSD - Source-to-Drain Voltage (V)
Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
Fig.8 Source-Drain Diode Forward Voltage
1.2
1.1
1
ID = 250µA
0.9
0.8
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-NOV.24.2009
PAGE. 4
PJF2N70 / PJU2N70
LEGALSTATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-NOV.24.2009
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for
packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm,
Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement
green compound material on order for the halogen free product
request.
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