SB3045LCT [PANJIT]
DUAL LOW VF SCHOTTKY RECTIFIER; 双路低VF肖特基整流器
| 元器件型号： | SB3045LCT |
| 生产厂家： | 
PAN JIT INTERNATIONAL INC.
|
| 描述和应用： | DUAL LOW VF SCHOTTKY RECTIFIER |
| PDF文件： | 总2页 (文件大小：78K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：SB3045LCT参数 | |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| 零件包装代码 | TO-247 |
| 包装说明 | ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN |
| 针数 | 3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8541.10.00.80 |
| 风险等级 | 5.62 |
| Is Samacsys | N |
| 其他特性 | FREE WHEELING DIODE, LOW POWER LOSS |
| 应用 | EFFICIENCY |
| 配置 | COMMON CATHODE, 2 ELEMENTS |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| JEDEC-95代码 | TO-247 |
| JESD-30 代码 | R-PSFM-T3 |
| 最大非重复峰值正向电流 | 275 A |
| 元件数量 | 2 |
| 相数 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 最低工作温度 | -55 °C |
| 最大输出电流 | 15 A |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 最大重复峰值反向电压 | 45 V |
| 表面贴装 | NO |
| 技术 | SCHOTTKY |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
SB3045LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
45 Volts
CURRENT
30 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
.058(1.47)
.042(1.07)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Typ i c a l the r ma l r e s i s ta nc e
Operating junction
Storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
ΘJC
T
J
T
STG
VALUE
45
30
15
250
2 .5
-55 to + 125
-55 to + 150
O
UNIT
V
A
A
C /W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=15A
I
F
=30A
I
F
=15A
I
F
=30A
V
R
=60V
T
A
=25
o
C
T
A
=125
o
C
T
A
=25
o
C
T
A
=125
o
C
MIN.
45
-
-
-
-
-
-
TYP.
-
-
-
0.42
0.59
-
-
MAX.
-
0.53
0.72
0.50
0.67
0.4
200
UNIT
V
V
V
mA
Instantaneous forward voltage per
diode
(1)
V
F
Reverse current per diode
(2)
Note : 1. Pulse test : tp < 380μs,
δ<
2%
2. Pulse test : Pulse width < 2.5ms
I
R
June 15,2010-REV.02
PAGE . 1
SB3045LCT
RATINGS AND CHARACTERISTICS CURVES (T
A
=25
o
C unless otherwise noted)
Average Forward Current (A)
35
Junction Capacitance (pF)
Resistive or Inductive Load
30
25
20
15
10
5
0
0
25
50
75
100
125
150
10000
T
J
=25
o
C
f=1.0MHz
Vsig=50mVp-p
1000
100
10
0.1
1
10
100
Case Temperature (
o
C)
Reverse Voltage (V)
Figure 1. Forward Current
Derating Curve
Figure 2. Typical Junction
Capacitance
1000
1000
Instantaneous Forward
Current (A)
T
A
=125 C
100
o
Instantaneous Reverse
Current (mA)
100
T
A
=100 C
10
1
0.1
0.01
10 20
T
A
=25
o
C
o
T
A
=100 C
10
o
1
T
A
=75 C
T
A
=25 C
o
o
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous
Forward Characteristics Per Diode
Figure 4. Typical Reverse
Characteristics Per Diode
June 15,2010-REV.02
PAGE . 2
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