SIC02A065T [PANJIT]

SILICON CARBIDE SCHOTTKY DIODE;
SIC02A065T
型号: SIC02A065T
厂家: PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述:

SILICON CARBIDE SCHOTTKY DIODE

文件: 总5页 (文件大小:447K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SiC02A065T  
SILICON CARBIDE SCHOTTKY DIODE  
650 V  
2 A  
Voltage  
Current  
TO-220AC  
Unit: inch(mm)  
Features  
Temperature Independent Switching Behavior  
Low Conduction and Switching Loss  
High Surge Current Capability  
Positive Temperature Coefficient on VF  
Fast Reverse Recovery  
Mechanical Data  
Case: Molded plastic, TO-220AC  
Marking: 02A065T  
Benefits  
High Frequency Operation  
Higher System Efficiency  
Environmental Protection  
Parallel Device Convenience  
Hard Switching & High Reliability  
High Temperature Application  
Maximum Ratings  
PARAMETER  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL TEST CONDITIONS  
VALUE  
UNITS  
VRRM  
VRSM  
VR  
TJ=25oC  
TJ=25oC  
TJ=25oC  
TC=25oC  
TC=125oC  
TC=150oC  
TC=25oC  
TC=125oC  
650  
650  
650  
6.5  
3.5  
2
V
V
V
A
A
A
A
A
Maximum DC Blocking Voltage  
Continuous Forward Current  
IF(AV)  
15  
Repetitive Peak Forward Surge Current  
(TP=10mS, Half Sine Wave, D=0.1)  
IFRM  
12  
February 11,2015-REV.01  
Page 1  
SiC02A065T  
Maximum Ratings  
PARAMETER  
SYMBOL TEST CONDITIONS  
VALUE  
16  
UNITS  
TC=25oC  
TC=125oC  
IFSM  
A
A
Non-Repetitive Peak Forward Surge Current  
(TP=10mS, Half Sine Wave)  
13  
Non-Repetitive Peak Forward Surge Current  
(TP=10uS, Pulse)  
TC=25oC  
106  
A
TC=25oC  
PD  
68  
22  
W
W
Power Dissipation  
TC=125oC  
Operating Junction Temperature  
Storage Temperature  
TJ  
175  
oC  
oC  
oC/W  
TSTG  
RθJC  
-55 to 175  
2.2  
Thermal Resistance Junction to Case  
Electrical Characteristics  
PARAMETER  
SYMBOL  
TEST CONDITION  
IR =100uA, TJ=25oC  
IF =2A, TJ=25oC  
IF =2A, TJ=175oC  
VR =650V, TJ=25oC  
VR =650V, TJ=175oC  
IF =2A, di/dt=300A/uS,  
VR =400V, TJ=25oC  
MIN.  
TYP.  
770  
1.5  
1.9  
1
MAX. UNITS  
DC Blacking Voltage  
VDC  
650  
-
V
V
-
-
-
-
1.8  
2.2  
50  
Forward Voltage  
VF  
IR  
V
uA  
uA  
Reverse Current  
5
110  
Total Capacitive Charge  
QC  
-
6
-
nC  
VR =1V, TJ=25oC, f=1MHz  
VR =200V, TJ=25oC, f=1MHz  
VR =400V, TJ=25oC, f=1MHz  
-
-
-
82  
15  
15  
-
-
-
pF  
pF  
pF  
Total Capacitance  
C
February 11,2015-REV.01  
Page 2  
SiC02A065T  
TYPICAL CHARACTERISTIC CURVES  
Fig.1 Forward Characteristics  
Fig.2 Reverse Characteristics  
Fig.4 Non-Repetitive Peak Forward Surge Current  
(Pulse Mode)  
Fig.3 Capacitance vs. Reverse Voltage  
Fig.5 Power Derating  
Fig.6 Current Derating  
February 11,2015-REV.01  
Page 3  
SiC02A065T  
Part No Packing Code Version  
Part No Packing Code  
Package Type  
TO-220AC  
Packing type  
Marking  
Version  
SIC02A065T_T0_00001  
50pcs / Tube  
02A065T  
Halogen free  
February 11,2015-REV.01  
Page 4  
SiC02A065T  
Disclaimer  
Reproducing and modifying information of the document is prohibited without permission from Panjit  
International Inc..  
Panjit International Inc. reserves the rights to make changes of the content herein the document anytime  
without notification. Please refer to our website for the latest document.  
Panjit International Inc. disclaims any and all liability arising out of the application or use of any product  
including damages incidentally and consequentially occurred.  
Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for  
particular purpose, non-infringement and merchantability.  
Applications shown on the herein document are examples of standard use and operation. Customers are  
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no  
representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
The products shown herein are not designed and authorized for equipments requiring high level of reliability or  
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical  
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these  
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International  
Inc. for any damages resulting from such improper use or sale.  
Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when  
complaining.  
February 11,2015-REV.01  
Page 5  

相关型号:

SIC02A065T-AU

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC02A065T-AU_T0_000A1

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC02A065T_T0_00001

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC02A120S

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC02A120S_L2_00001

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC02C60

2A SiC Schottky Diode
CITC

SIC0306-H

IC Socket, DIP6, 6 Contact(s), 2.54mm Term Pitch, 0.3inch Row Spacing, Solder
AUK

SIC0322-H

IC Socket, DIP22, 22 Contact(s), 2.54mm Term Pitch, 0.3inch Row Spacing, Solder
AUK

SIC04A065D

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC04A065ND

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC04A065ND_R2_00001

SILICON CARBIDE SCHOTTKY DIODE
PANJIT

SIC04A065NS

SILICON CARBIDE SCHOTTKY DIODE
PANJIT