W04M [PANJIT]
1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE; 1.0安培微型单相硅桥
| 型号： | W04M |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE |
| 文件： | 总2页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
W005M~W10M
1.0 AMPERES MINIATURE SINGLE-PHASE SILICON BRIDGE
Unit: inch (mm)
AM
1.0 Amperes
CURRENT
50 to 1000 Volts
VOLTAGE
FEATURES
.370(9.4)
.339(8.6)
• Plastic material used carries Underwriters Laboratory recognition.
• High surge dielectric strength.
• Typical IR LESS Than 1uA.
• Exceeds environmental standards of MIL-STD-19500
• Ideal for printed circuit board.
• High temperature soldering guaranteed: 265OC/10 seconds/ .375”
(9.5 mm) lead length/5 Ibs. (2.3kg) tension
• Pb free product are available : 99% Sn can meet RoHS environment
substance directive request
.031(0.8)
.028(0.7)
MECHANICALDATA
Case: Reliable low cost construction utilizing molded plastic technique
.220(5.6)
.181(4.6)
Bottom View
Terminals: Leads solderable per MIL-STE-750, Method 2026
Mounting Position: Any
.220(5.6)
.181(4.6)
Weight: 0.04 ounces, 1.1 grams.
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.
For Capacitive load derate current by 20%.
PARAMETER
SYMBOL W005M W01M
W02M W04M
W06M
600
W08M
800
W10M
UNITS
V
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
RMS
50
35
50
100
70
200
140
200
400
1000
700
Maximum RMS Bridge Input Voltage
280
400
1.0
420
600
560
800
V
V
A
Maximum DC Blocking Voltage
V
DC
100
1000
Maximum Average Forward Rectified Output Current .375"
IAV
(9.5mm ) Lead Length at TA
=25OC
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
50.0
5.0
A
A2s
V
I2t Rating for fusing ( t<8.35ms)
I 2
t
Maximum Forward Voltage Drop per Element at 1.0A
V
F
1.0
Maximum DC Reverse Current T
at Rated DC Blocking Voltage T
A
=25 OC
=100 OC
10.0
1000
µA
I
R
A
Typical Junction capacitance per bridge element (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
C
J
24
pF
OC
OC
TJ
-55 to + 125
-55 to + 150
TSTG
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
PAGE . 1
STAD-NOV.06.2003
1.6
1.4
80
60
40
30
TJ C
=25O
8.3ms SINGLE HALF SINE WAVE
JEDED METHOD
Resistive of
Inductive Load
1.2
1.0
0.8
0.6
0.4
20
Capactivie Load 50O
Corduction Angle
10
0
0.2
0
2
4
6
10
20 40 60 100
20
40
60
80
100
120
140
AMBIENT TEMPERATURE, O
C
NUMBER OF CYCLES AT 60Hz
Fig.2MAXIMUM NON-REPETITIVE PEAK FORWARD CURRENT
Fig.1 DERATING CURVE OUTPUT RECTIFIED CURRENT
20
10
10
TA C
=100O
1.0
1.0
0.1
0.1
TA C
=25O
TJ C
=25O
Pulse Width =300us
1% Duty Cycle
0.01
0.01
0.4
1
20
40
60
80
100
120
160
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig.3 TYPICAL FORWARD CHARACTERISTIC
Fig.4 TYPICAL REVERSE CHARACTERISTICS
100
60
40
20
10
6
4
2
1
.1 .2
.4
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
Fig.5 TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
PAGE . 2
STAD-NOV.06.2003
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