PI4ULS5V4555ZHE [PERICOM]

Microprocessor Circuit, PQCC16;


型号：	PI4ULS5V4555ZHE
厂家：	PERICOM SEMICONDUCTOR CORPORATION
描述：	Microprocessor Circuit, PQCC16 外围集成电路
文件：	总8页 (文件大小：247K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PI4ULS5V4555

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Single SIM/Smart Card Power Supply and Level Translation

Features

Description



Power Management and Control for two SIM Cards

or Smart Cards

The PI4ULS5V4555 provides the power conversion

and signal level translation needed for advanced (2.5G

and 3G) cellular telephones to interface with 1.8V and

3V subscriber identity modules (SIMs). The device

meets all requirements for 1.8V or 3V SIMs and

contains LDO regulators to power 1.8V or 3V SIM

cards from a 3V and 6V input. The output voltages can

be set using a single selection pin and up to 50mA of

load current can be supplied. Internal level translators

allow controller operating with supplier as low as 1.4V

to interface with 1.8V or 3V Smart Cards. Battery life is

maximized by a low operating current of 40μA and a

shutdown current of less than 1μA.



SIM Power Supply 1.8V/3V at 50mA

Input Voltage Range: 3V to 6V

Controller Voltage Range: 1.4V to 3.6V

Automatic Level Translation

Built-In Fault Protection Circuitry

Meets all ETSI, IMT-2000 and ISO7816 SIM/Smart

Card Interface Requirements

40µA Operating Current

Low Operating/Shutdown Current

>8kV ESD on SIM Card Pins



Meets EMV Fault Tolerance Requirements

Packaging (Pb-free & Green): 16-Lead QFN3x3

Applications

Pin Assignment



GSM, TD-SCDMA and other 3G+ Cellular Phones

Wireless Point-to-Sale Terminals

Multiple SIM Card Interfaces

V_SEL

V_DD

CLK

GND

RST

Note: 16-Lead (3mmx3mm) Plastic QFN Exposed Pad (pin 17)

is GND, Must Be Soldered to PCB.

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

Pin Description

Name Type

Description

V_DD

V_BAT

V_CC

Power Input. Control logic power supply voltage input of devices.

Power Input. Analog section power supply voltage input of devices.

Power Output. 1.8V or 3V voltage output for respective SIM /Smart cards’ power supply V_CCpin.

Clock Output. Connect CLK pin to SIM/Smart card’s CLK pin. CLK signal is derived from the

CLKIN pin.

Reset Output. Connect RST pin to SIM/Smart card’s RST pin. RST signal is derived from the

RSTIN pin.

Data Port. Connect I/O pin to SIM/Smart card’s I/O pin. Communication path can be set from

DATA to I/O.

CLK

RST

I/O

DATA

RSTIN

I/O

Data Port. I/O pin transmits/receives data to/from the DATA pin.

Reset Input. Reset signal is transmitted from RSTIN to RST.

CLKIN

V_SEL

Clock Input. Clock signal is transmitted from CLKIN to CLK.

V_CCEnable Control Inputs. EN=HIGH output active, EN=LOW shutdown the device.

Voltage Selection Input. V_SEL=LOW, V_CC=1.8V and V_SEL=HIGH, V_CC=3V

4, 6, 12,

No Connection.

Ground.

GND

Ground. Exposed pad of the package bottom.

V_SELTruth Table

V_SEL

Selected Voltage

1.8V (V_CC=1.8V)

3V (V_CC=3V)

Note:

Maximum Ratings

Stresses greater than those listed under MAXIMUM

RATINGS may cause permanent damage to the

device. This is a stress rating only and functional

operation of the device at these or any other

conditions above those indicated in the operational

sections of this specification is not implied.

Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

2. The device is guaranteed to meet performance

specifications from 0°C to 85°C . Specification over

the -40°C to 85°C operating temperature range are

assured by design, characterization and correlation

with statistical controls.

Storage Temperature...............................................................-65℃ to +150℃

Ambient Temperature ...............................................................-40℃ to +85℃

ESD(HBM) for all pins..............................................................................8KV

V_BAT, V_DD, V_CCto GND............................................................ -0.5V to +6.0V

I/O, CLK, RST...................................................................-0.5V to V_CC+0.5V

I_CC.............................................................................................................50mA

V_CCShort Circuit Duration………………………………………….Indefinite

3. I_CCbased on long-term current density limitation.

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

DC Electrical Characteristics

(V_BAT=3.3V, V_DD=1.8V, C₃= 1μF, T_A= –40°C to 85°C, unless otherwise noted.)

Parameter

Input Power Supply

Description

Test Conditions

Min

3.0

Typ.

Max

Unit

V_BAT

V_BATOperating Voltage

6.0

μA

V_CC=3V, I_CC=0A

V_CC=1.8V, I_CC=0A

I_BAT

V_BATOperating Current

V_DD

I_DD

V_DDOperating Voltage

V_DDOperating Current

V_DDShutdown Current

V_BATShutdown Current

1.4

0.1

3.6

I_DDS

I_BATS

SIM Card Supplies

μA

V_DD=0V

3V Mode. 0mA<I_CC<50mA

1.8V Mode. 0mA<I_CC<30mA

I_CC=0mA, EN active to V_CCat 90%

Selected Voltage

2.85

1.71

3.00

1.8

3.15

1.89

Output Voltage

V_CC

Turn on time of V_CC

0.3

1.5

Turn off time of V_CC

V_CCShort Circuit Current

I_CC=0mA, EN shutdown to V_CCat 1V

V_CCshort to GND

0.5

I_SHORT

CLK

120

0.2x

V_CC

V_OL

V_OH

Low Level Output Voltage

High Level Output Voltage

Sink current =-200μA

Ｖ

0.9x

V_CC

Source current =20μA

Rise/Fall Time

CLK Frequency

Loaded with 50pF (10% to 90%)

MHz

RST

0.2x

V_CC

V_OL

V_OH

Low Level Output Voltage

Sink current =-200μA

Ｖ

0.9x

V_CC

High Level Output Voltage

Rise/Fall Time

Source current =20μA

Ｖ

Loaded with 50pF (10% to 90%)

μs

I/O

V_OL

V_OH

Low Level Output Voltage

High Level Output Voltage

Sink current =-1mA (V_DATA=0V)

0.8×

V_CC

0.3

Ｖ

Source current =20μA (V_DATA=V_DD

)

Rise/Fall Time

Short-Circuit current

Loaded with 50pF (10% to 90%)

V_DATA=0V

3.5

μs

DATA

I_IL

Low Level Input Current

High Level Input Current

Low Level Output Voltage

-20

0.3

μA

Ｖ

I_IH

V_OL

Sink current =-500μA (V_I/O=0V)

Source current =20μA

0.8×

V_DD

V_OH

High Level Output Voltage

Rise/Fall Time

Ｖ

(V_I/O=V_CC

)

Loaded with 50pF (10% to 90%)

125

500

EN, RSTIN, CLKIN, VSEL

0.2×

V_DD

V_IL

Low Input Threshold

Ｖ

0.8×

V_DD

V_IH

High Input Threshold

Input Current

Ｖ

I_IL(I_IH)

-100

100

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

Function Block Diagram

V_DD

V_BAT

LDO

V_CC

V_SEL

RSTIN 14

RST

CLKIN 13

11 CLK

DATA 15

I/O

GND

Function Description

V_DD(Pin 3): Power. Supply voltage and reference voltage for the control logic section.

V_BAT(Pin 5): Power. The supply voltage input of analog sections.

V_CC(Pin 7): Power supply output to the card socket V_CCpins and can be set to 1.8V or 3V via the V_SELinput. EN controls the V_CC

turn on or turn off.

CLK (Pin 11): Clock output to the card socket CLK pin and the clock signal is derived from the CLKIN pin with level shift

functions. The CLK pin is gated off until V_CCattain its correct value. This pin is pulled to ground during shutdown. Fast rising and

falling edges necessitate careful board layout for the CLK node.

RST (Pin 14): Reset output to the card socket RST pin and the reset signal is derived from the RSTIN pin with level shift function.

The RST pin is shutdown until V_CCattain its correct value. This pin is pulled to ground during shutdown.

I/O (Pin 8): Data output/input to the card socket I/O pin, transmit /receive data to/from the DATA pin with level shift function.

The I/O pin is gated off until V_CCattain its correct value. The SIM card output must be on an open-drain driver capable of

sourcing>1mA.

DATA (Pin 8): Input/Output. Connect this pin to microcontroller side I/O pin. The DATA pin provides the bidirectional

communication path to card. The pin possesses a weak pull-up, allowing the controller to use an open drain output with capable of

sinking greater than 1mA and maintain a HIGH state during shutdown, as long as V_DDis powered.

RSTIN (Pin 14): Input. Supply the reset signal to the card through RST. It is level shifted and transmitted directly to the RST pin

of the selected card.

CLKIN (Pin 13): Input. Supply the clock signal to the card through CLK. It is level shifted and transmitted directly to the CLK

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

pin of the card.

EN (Pin 1): Input. EN pin enable and disable V_CC. RST, CLK, I/O pins are shutdown until V_CCattain its correct value.

V_SEL(Pin 2): Input. The V_SELselects the voltage level of V_CC. Bring it LOW selects V_CC=1.8V while driving this pin HIGH

selects V_CC= 3V. Details please see V_SELTruth Table.

GND (Pin 10): Chip Ground. This pad must be soldered directly to a PCB ground plane.

EXPOSED PAD (Pin 17): Chip Ground. This pad must be soldered on PCB.

The PI4ULS5V4555 features regulated power 1.8V and 3V to SIM/Smart Card, and it has internal level shift function to allow

low voltage controllers to interface with 1.8V and 3V SIMs or smart cards. The device meet ETSI, IMT-2000, and ISO7816

requirements for SIM and Smart card interface.

Bidirectional Channels

The bidirectional channel is level shifted to the appropriate V_CCvoltages at the I/O pin. An NMOS pass transistor performs the

level shifting. The gate of the NMOS transistor is biased such that the transistor is completely off when both sides have

relinquished the channel. If I/O pin asserts a LOW, then the transistor will convey LOW to the other side.

When V_CCpowered ok, it becomes a candidate to drive data on the DATA pin and likewise receive data from the DATA pin.

When EN turns LOW and shut down the device, the communication with the DATA pin will be disabled and the DATA pin will

be pulled HIGH by internal resistor to V_DD, as long as V_DDis powered.

Level Translators

The CLK and RST lines to SIM are level shifted from the controller supply (V_DDto GND) to the SIM supply (V_CCto GND). The

data input to SIM requires an open-drain output on the controller. On-chip pull-up current sources are provided for both the

DATA and I/O lines.

Fault Detection

The V_CC, I/O, RST, CLK and DATA pins are all protected against short-circuit faults. While there are no logic outputs to indicate

that a fault has occurred, these pins will be able to tolerate the fault condition until it has been removed.

The V_CC, I/O, RST, CLK and DATA pins possess fault protection circuitry which will limit the current available to the pins. Each

V_CCpin is capable of supplying approximately 50mA (typ.) before the output voltage is reduced.

The CLK pin is designed to tolerate faults by reducing the current drive capability of their output stages. After a fault is detected

by the internal fault detection logic, the logic waits for a fault detection delay to elapse before reducing the current drive capability

of the output stage. The reduced current drive allows the PI4ULS5V4555 to detect when the fault has been removed.

Capacitor Selection

A total of four capacitors are required for proper bypassing of the PI4ULS5V4555. An input bypass capacitor is required at V_BAT

and V_DD

Output bypass capacitors are required on each of the Smart Card V_CCpins. Due to their extremely low equivalent series resistance

(ESR), only multilayer ceramic chip capacitors should be used to ensure proper stability and ESD protection.

There are several types of ceramic capacitors available, each having considerably different characteristics. For example, X7R/X5R

ceramic capacitors have excellent voltage and temperature stability but relatively low packing density. Y5V ceramic capacitors

have apparently higher packing density but poor performance over their rated voltage or temperature ranges. Under certain voltage

and temperature conditions Y5V and X7R/X5R ceramic capacitors can be compared directly by case size rather than specified

value for a desired minimum capacitance.

The V_CCoutputs should be bypassed to GND with a 1μF capacitor. V_DDand V_BAToutputs should be bypassed to GND with a

0.1μF capacitor. Capacitors should be placed as close to the device as possible for improved ESD tolerance.

Compliance Testing

Inductance due to long leads on type approval equipment can cause ringing and overshoot that leads to testing problems. Small

amounts of capacitance and damping resistors can be included in the application without compromising the normal electrical

performance of the PI4ULS5V4555 or Smart Card system. Generally a 100Ω resistor and a 20pF capacitor will accomplish this,

as shown in below.

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

1µF

PI4ULS5

V4555

VCC

100Ω

20pF

Smart

Card

Socket

CLK

RST

I/O

20pF

Additional Components for Improved Compliance Testing

Shutdown Modes

The device can enter to shutdown mode by EN pin. Bring EN pin to LOW directly shutdown the device. The shutdown current is

less than 1µA.

Application Circuit

V_DD

V_BAT

1.4V to 3.6V

3V to 6V

0.1µF

V_DD

V_BAT

I/O

RST

CLK

V_CC

I/O

CLKIN

RSTIN

DATA

1.8V/3V

SIM

Card

RST

CLK

VCC

1µF

µContr

oller

PI4ULS5V4555

GND

V_SEL

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

Typical Performance Characteristics

Supply Current I_BATvs. Supply Voltage V_BAT

V_CCShort-circuit Current vs. Temperature

(V_CC=1.8V)

120

-40℃

25℃

85℃

Vcc=1.8V

Vcc=3V

110

100

-40

-15

2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5

VBAT (V)

Temperature (℃)

No load Supply Current I_BATvs. Supply Voltage V_BAT

(V_CC=3.0V)

-40℃

25℃

85℃

3.5

4.5

5.5

VBAT (V)

12-12-0004

PT0398-1

01/05/13

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4555

Single SIM/Smart Card Power Supply

and Level Translation

Mechanical Information

PKG. DIMENSIONS(MM)

SYMBOL

MIN

0.700

0.000

MAX

0.800

0.050

0.203REF

2.900

1.600

0.180

3.100

1.800

0.300

Note:

1) Controlling dimensions in millimeters.

2) Ref: JEDEC MO-220J

0.500TYP

0.300

0.500

Ordering Information

Part Number

Package Code

Package

PI4ULS5V4555ZHE

Lead Free and Green TQFN-16 3mmx3mm (ZH)

Notes:



E = Pb-free and Green



Adding X Suffix= Tape/Reel

Pericom Semiconductor Corporation  1-800-435-2336  www.pericom.com

Pericom reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply

the best possible product. Pericom does not assume any responsibility for use of any circuitry described other than the circuitry embodied in Pericom product. The

company makes no representations that circuitry described herein is free from patent infringement or other rights, of Pericom.

12-12-0004

PT0398-1

01/05/13

PI4ULS5V4555ZHE [PERICOM]

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