PI4ULS5V4557ZHEX_技术文档

PI4ULS5V4557

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Dual SIM/Smart Card Power Supply and Interface Signal Switch

Features

Description



Power Management and Control for two SIM Cards

or Smart Cards

Independent 1.8V/3V VCC Control for Both Cards

Supports Simultaneous Powering of Both Cards

Fast channel Switching

The PI4ULS5V4557 provides the power conversion and

signal level translation needed for advanced (2.5G and

3G) cellular telephones to interface with 1.8V and 3V

subscriber identity modules (SIMs). The device meets

all requirements for 1.8V or 3V SIMs and contains LDO

regulators to power 1.8V or 3V SIM cards from a 2.7V

to 5.5V input. The output voltages can be set using the

voltage selection pins and up to 50mA of load current

can be supplied. A channel select pin determines which

channel is open for communication.



Automatic Level Translation

Fast rise time by current pull up

Built-In Fault Protection Circuitry

Automatic Activation/Deactivation Sequencing

Low Operating/Shutdown Current

>8kV ESD on SIM Card Pins

Meets EMV Fault Tolerance Requirements

Packaging (Pb-free & Green): 16-Lead TQFN3x3

Internal level translators allow controller operating

with supplier as low as 1.4V to interface with 1.8V or

3V Smart Cards. Battery life is maximized by a low

operating current of 40μA and a shutdown current of

less than 1μA.

Pin Assignment

16

15

14

13

Applications



GSM, TD-SCDMA and other 3G+ Cellular Phones

Wireless Point-to-Sale Terminals

V_CC2

V_DD

M0

1

2

3

4

12

11

10

9

Multiple SIM Card Interfaces

M1

17

V_BAT

V_CC1

CLKIN

RSTIN

5

6

7

8

Note: 16-Lead (3mmx3mm) Plastic QFN Exposed Pad (pin 17)

is GND, Must Be Soldered to PCB.

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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Pin Description

2

Name

V_DD

Type

P

I

Description

Power Input. Control logic power supply voltage input of devices.

Power Input. Analog section power supply voltage input of devices.

3

V_BAT

Power Outputs. 1.8V or 3V voltage output for respective SIM /Smart cards’ power

supply V_CCpin.

Clock Outputs. Connect CLK1/2 pins to respective SIM/Smart cards’ CLK pin.

CLK1/2 signals are derived from the CLKIN pin.

Reset Outputs. Connect RST1/2 pins to respective SIM/Smart cards’ RST pin.

RST1/2 signals are derived from the RSTIN pin.

Data Ports. Connect I/O1, I/O2 pins to respective SIM/Smart cards’ I/O pin.

Communication path can be set from DATA to I/O1 or from DATA to I/O2.

Data Port. I/O1 or I/O2 pin transmits/receives data to/from the DATA pin.

Reset Input. Reset signal is transmitted from RSTIN to RST1 or RST2.

4, 1

V_CC1, V_CC2

O

CLK1,

CLK2

RST1, RST2

5, 16

6, 15

7, 14

O

I/O1,

I/O2

DATA

RSTIN

I/O

8

9

I/O

I

10

13

CLKIN

EN

Clock Input. Clock signal is transmitted from CLKIN to CLK1 or CLK2.

V_CC1, V_CC2Enable Control Inputs.

Voltage Selection Inputs. V_CC1, V_CC2both have two voltage values 1.8V and 3V,

and V_CC1, V_CC2voltage values can be selected at same time. Details see below Truth

Table.

11,12

17

M1, M0

GND

I

Ground. Exposed pad of the package bottom.

P

Truth Table

M1

0

M0

0

Selected Channel/Voltage

Channel 1/1.8V (V_CC1=1.8V)

Channel 1/3V (V_CC1=3V)

Channel 2/1.8V (V_CC2=1.8V)

Channel 2/3V (V_CC2=3V)

0

1

0

1

Note:

Maximum Ratings

Stresses greater than those listed under MAXIMUM

RATINGS may cause permanent damage to the

device. This is a stress rating only and functional

operation of the device at these or any other

conditions above those indicated in the operational

sections of this specification is not implied.

Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

2. The device is guaranteed to meet performance

specifications from 0°C to 85°C . Specification over

the -40°C to 85°C operating temperature range are

assured by design, characterization and correlation

with statistical controls.

Storage Temperature...............................................................-65℃ to +150℃

Ambient Temperature ...............................................................-40℃ to +85℃

ESD(HBM) for I/O pins.............................................................................8KV

ESD(HBM) for all pins...........................................................................7.5KV

V_BAT, V_DD, DATA, RSTIN, CLKIN, EN, M0, M1 to GND ........ -0.5V to +6V

I/O1, CLK1, RST1............................................................-0.5V to V_CC1+0.5V

I/O2, CLK2, RST2............................................................-0.5V to V_CC2+0.5V

I_{CC1, 2}.........................................................................................................80mA

V_CC1, ₂Short Circuit Duration……………………………………….Indefinite

3. I_{CC1, 2}based on long-term current density

limitation.

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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DC Electrical Characteristics

(V_BAT=3.3V, V_DD=1.8V, C₁=C₂=1μF, T_A= –40°C to 85°C, unless otherwise noted.)

Parameter

Input Power Supply

Description

Test Conditions

Min

2.7

Typ.

Max

Unit

V_BAT

V_BATOperating Voltage

-

5.5

V

μA

V

V_CC1=3V, V_CC2=0V, I_CC1=0A

V_CC1=1.8V, V_CC2=0V, I_CC1=0A

I_BAT

V_BATOperating Current

-

40

100

V_DD

I_DD

V_DDOperating Voltage

V_DDOperating Current

V_DDShutdown Current

V_BATShutdown Current

-

1.4

-

4

0.1

3.6

15

1

-

I_DDS

I_BATS

SIM Card Supplies

μA

V_DD=0V

1

3V Mode. 0mA<I_{CC1, 2}<50mA

1.8V Mode. 0mA<I_{CC1, 2}<30mA

I_{CC1, 2}=0mA, EN to I_O1/2

2.85

1.71

-

3.00

1.8

1

3.15

1.89

2.5

Output Voltage

V

V_{CC1, 2}

Channel Turn on Time

ms

CLK1, 2

V_OL

Low Level Output Voltage

High Level Output Voltage

Sink current =-200μA

-

V_{CC1, 2}

0.2

-

0.2

-

Ｖ

-

V_OH

Source current =200μA

Rise/Fall Time

CLK1, 2 Frequency

Loaded with 50pF (10% to 90%)

-

16

ns

MHz

10

RST1, 2

V_OL

Low Level Output Voltage

High Level Output Voltage

Rise/Fall Time

Sink current =-200μA

-

V_{CC1, 2}

0.2

-

0.2

Ｖ

ns

V_OH

Source current =200μA

Loaded with 50pF (10% to 90%)

-

100

I/O1, 2

V_OL

Low Level Output Voltage

High Level Output Voltage

Sink current =-1mA (V_DATA=0V)

Source current =20μA

-

0.3

-

Ｖ

0.85×V

CC1, 2

V_OH

(V_DATA=V_DD

)

Rise/Fall Time

Short-Circuit current

Loaded with 50pF (10% to 90%)

V_DATA=0V

-

300

3.5

500

10

ns

mA

DATA

V_OL

Low Level Output Voltage

High Level Output Voltage

Rise/Fall Time

Sink current =-500μA (V_{I/O1, 2}=0V)

Source current =20μA

-

0.3

-

Ｖ

ns

0.8×

V_DD

-

V_OH

(V_{I/O1, 2}=V_{CC1, 2}

)

Loaded with 50pF (10% to 90%)

125

500

EN, RSFN, CLKIN, MO, M1

0.15×

V_DD

V_IL

Low Input Threshold

-

Ｖ

0.85×V

V_IH

High Input Threshold

Input Current

-

Ｖ

DD

I_IL(I_IH)

-1

1

μA

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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Function Block Diagram

V_DD

2

V_BAT

3

V_CC1

4

7

LDO1

LDO2

1

V_CC2

V_DD

I/O1

14 I/O2

RST1

CLK1

6

5

15 RST2

16 CLK2

DATA

RSTIN

8

9

V_DD

CLKIN 10

Control Logic

17

13

12

11

GND

M1

EN

M0

Function Description

V_DD(Pin 2): Power. The Control logic is referring to the voltage.

V_BAT(Pin 3): Power. The supply voltage input of analog sections.

V_CC1, V_CC2(Pins 4, 1): Two power supply outputs to the respective card sockets V_CCpins and both can be set to 0V, 1.8V or 3V

via the M0, M1and EN inputs. Only one of V_CC1, V_CC2will be active at a time.

CLK1, CLK2 (Pins 5, 16): Two clock outputs to the respective card sockets CLK pins and the clock signals are derived from the

CLKIN pin with level shift functions. The CLK1, CLK2 pins are gated off until V_CC1, V_CC2attain their correct values.

RST1, RST2 (Pins 6, 15): Two reset outputs to the respective card sockets RST pins and the reset signals are derived from the

RSTIN pin with level shift functions. The RST1, RST2 pins are gated off until V_CC1, V_CC2attain their correct values. When a card

is deselected, the sate of its RST is latched up to its current state.

I/O1, I/O2 (Pins 7, 14): Two data outputs/inputs to the respective card sockets I/O pins, transmit /receive data to/from the DATA

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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pin with level shift functions. The I/O1, I/O2 pins are gated off until V_CC1, V_CC2attain their correct values.

DATA (Pin 8): Input/Output. Connect this pin to microcontroller side I/O pin. The DATA pin provides the bidirectional

communication path to both cards. Only one of cards may be selected to communicate via the DATA pin at a time. The pin

possesses a weak pull-up current source, allowing the controller to use an open drain output and maintain a HIGH state during

shutdown, as long as V_DDis powered.

RSTIN (Pin 9): Input. Supply the reset signal to the cards through RST1, RST2. It is level shifted and transmitted directly to the

RST pin of the selected card.

CLKIN (Pin 10): Input. Supply the clock signal to the cards through CLK1, CLK2. It is level shifted and transmitted directly to

the CLK pin of the selected card.

M0, M1 (Pins 12, 11): Inputs. The M0, M1 pins select which set of SIM/smart card pins are active and the voltage level (1.8V or

3V) of VCC1, VCC2. Detail please sees below Channel and Voltage Truth Table.

EN (Pins 13): Inputs. The EN pin shuts down the chip when LOW.

EXPOSED PAD (17): Chip Ground. This ground pad must be soldered directly to a PCB ground plane.

The PI4ULS5V4557 features two independent SIM/Smart Card channels. Only one of these channels may be open for

communication at a time. Each channel is able to product two voltage levels, 1.8V and 3V. The channel selection and voltage

selection are controlled by the EN, M0 and M1 pins as shown in the table below:

Channel and Voltage Truth Table

EN

1

M1

0

M0

0

Selected Channel/Voltage

Channel 1/1.8V (V_CC1=1.8V)

Channel 1/3V (V_CC1=3V)

Channel 2/1.8V (V_CC2=1.8V)

Channel 2/3V (V_CC2=3V)

Channel 1 and 2 Disabled

1

0

1

0

1

0

×

Bidirectional Channels

The bidirectional channels are level shifted to the appropriate V_{CC1, 2}voltages at the I/O1, 2 pins. An NMOS pass transistor

performs the level shifting. The gate of the NMOS transistor is biased such that the transistor is completely off when both sides

have relinquished the channel. If one side of the channel asserts a LOW, then the transistor will convey LOW to the other side.

When a channel is selected, it becomes a candidate to drive data on the DATA pin and likewise receive data from the DATA pin.

When a channel is deselected, it’s I/O1 (or I/O2) pin will be pulled LOW and communication with the DATA pin will be disabled.

If both channels are disabled, a weak pull-up ensures that the DATA pin is held HIGH, as long as V_DDis powered.

Auto Pull-Up Current Sources

Internal auto pull-up current source will confirm the signal pass through bidirectional pins (DATA, I/O1, 2) and fast the signal rise

time when normal data transmit/receive from DATA to I/O1 (I/O2) .

Reset Channels

When a channel is selected, the reset channel provides a level shifted path from the RSTIN pin to the RST pin of the selected card.

PI4ULS5V4557’s reset pin is pulled LOW when a channel is deselected.

Activation/Deactivation

Activation and deactivation sequencing is handled by built-in circuitry. Each channel may be activated or deactivated

independently of the other. The activation sequence for each channel is initiated by bringing the EN pin HIGH. The activation

sequence is outlined below:

1. The RST, CLK and I/O pins are held LOW.

2. VCC is enabled.

3. After VCC is stable at its selected level, the I/O and RST channels are enabled.

4. The clock channel is enabled on the rising edge of the second clock cycle after the I/O pin is enabled.

The deactivation sequence is initiated by bringing the EN pin LOW. The deactivation sequence is outlined below:

1. The reset channel is disabled and RST is brought LOW.

2. The clock channel is disabled and the CLK pin is brought LOW two clock cycles after EN is brought LOW. If the clock is not

running, the clock channel will be disabled approximately 9μs after the EN pin is brought LOW.

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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3. The I/O channel is disabled and the I/O pin is brought LOW approximately 9μs after the EN pin is brought LOW.

4. VCC1, 2 will be depowered after the I/O pin is brought LOW.

The activation or deactivation sequences will take place every time a card channel is enabled or disabled.

Fault Detection

The VCC1, 2, I/O1, 2, RST1, 2, CLK1, 2 and DATA pins are all protected against short-circuit faults. While there are no logic

outputs to indicate that a fault has occurred, these pins will be able to tolerate the fault condition until it has been removed.

The VCC1, 2, I/O1, 2, and RST1, 2 pins possess fault protection circuitry which will limit the current available to the pins. Each

VCC pin is capable of supplying approximately 90mA (typ.) before the output voltage is reduced.

The CLK1, 2 pins are designed to tolerate faults by reducing the current drive capability of their output stages. After a fault is

detected by the internal fault detection logic, the logic waits for a fault detection delay to elapse before reducing the current drive

capability of the output stage. The reduced current drive allows the PI4ULS5V4557 to detect when the fault has been removed.

Capacitor Selection

A total of four capacitors are required for proper bypassing of the PI4ULS5V4557. An input bypass capacitor is required at V_BAT

and V_DD

.

Output bypass capacitors are required on each of the Smart Card V_CCpins. Due to their extremely low equivalent series resistance

(ESR), only multilayer ceramic chip capacitors should be used to ensure proper stability and ESD protection.

There are several types of ceramic capacitors available, each having considerably different characteristics. For example, X7R/X5R

ceramic capacitors have excellent voltage and temperature stability but relatively low packing density. Y5V ceramic capacitors

have apparently higher packing density but poor performance over their rated voltage or temperature ranges. Under certain voltage

and temperature conditions Y5V and X7R/X5R ceramic capacitors can be compared directly by case size rather than specified

value for a desired minimum capacitance.

The V_{CC1, 2}outputs should be bypassed to GND with a 1μF capacitor. V_DDand V_BAToutputs should be bypassed to GND with a

0.1μF capacitor. Capacitors should be placed as close to the device as possible for improved ESD tolerance.

Compliance Testing

Inductance due to long leads on type approval equipment can cause ringing and overshoot that leads to testing problems. Small

amounts of capacitance and damping resistors can be included in the application without compromising the normal electrical

performance of the PI4ULS5V4557 or Smart Card system. Generally a 100Ω resistor and a 20pF capacitor will accomplish this,

as shown in below.

1µF

PI4ULS5

V4557

VCC1, 2

100Ω

20pF

Smart

Card

Socket

CLK1, 2

RST1, 2

I/O1, 2

20pF

Additional Components for Improved Compliance Testing

Shutdown Modes

The device can enter to shutdown mode by EN pin. Bring EN pin to LOW directly shutdown the device. The shutdown current is

less than 1µA. For applications that require virtually zero shutdown current, the V_DDpin can be grounded. This will reduce the

V_BATcurrent to well under 1µA.

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PT0395-1

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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Application Circuit

V_DD

V_BAT

1.4V to 3.6V

3V to 6V

C3

0.1µF

C4

0.1µF

2

3

V_DD

V_BAT

5

C7

10

9

I/O1

RST1

CLK1

V_CC1

I/O

CLKIN

RSTIN

DATA

6

7

C2

C3

C1

1.8V/3V

SIM

Card 1

RST

CLK

VCC

4

8

C1

1µF

17

µContr

oller

GND

C2

1µF

13

12

1

C1

C3

VCC

CLK

RST

I/O

EN

V_CC2

CLK2

RST2

I/O2

16

1.8V/3V

SIM

Card 2

M0

M1

15

14

C2

C7

11

PI4ULS5V4557

Typical Performance Characteristics

I/Ox Short-circuit Current vs. Temperature

(V_DD=3.6V V_BAT=5.5V)

No load Supply Current I_BATvs. Supply Voltage V_BAT

(T_A=25℃ I_CC1=I_CC2=0µA)

5.0

4.5

4.0

3.5

3.0

100

90

Vccx=1.8V

Vccx=3V

80

70

60

50

40

30

-40

-15

10

35

60

85

2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5

VBAT (V)

Temperature (℃)

12-12-0004

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PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

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V_BATQuiescent Current (I_BAT-I_CC) vs. Load Current

Shutdown Current I_BATSvs. Supply Voltage V_BAT

(V_DD=1.8V)

(T_A=25℃ V_BAT= 3.1V)

0.7

100

80

60

40

20

0

0.6

0.5

0.4

0.3

0.2

0.1

0

-40℃

25℃

85℃

2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5

VBAT (V)

0.1

1

10

100

Load Current (mA)

Shutdown Current I_DDSvs. Supply Voltage V_DD

50

40

30

20

10

0

1.2

1.6

2.0

2.4

2.8

3.2

3.6

VDD(V)

12-12-0004

PT0395-1

01/05/13

8

PRELIMINARY INFORMATION: COMPANY CONFIDENTIAL

PI4ULS5V4557

Dual SIM/Smart Card Power Supply and

Interface Signal Switch

|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||

Mechanical Information

PKG. DIMENSIONS(MM)

SYMBOL

MIN

0.700

0.000

MAX

0.800

0.050

A

A1

A3

D

0.203REF

2.900

1.600

0.180

3.100

1.800

0.300

E

D1

E1

b

Note:

1) Controlling dimensions in millimeters.

2) Ref: JEDEC MO-220J

e

L

0.500TYP

0.300

0.500

Ordering Information

Part Number

Package Code

Package

Lead Free and Green TQFN-16 3x3 (ZH)

PI4ULS5V4557ZHE

ZH

Notes:



E = Pb-free and Green



Adding X Suffix= Tape/Reel

Pericom Semiconductor Corporation  1-800-435-2336  www.pericom.com

Pericom reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply

the best possible product. Pericom does not assume any responsibility for use of any circuitry described other than the circuitry embodied in Pericom product. The

company makes no representations that circuitry described herein is free from patent infringement or other rights, of Pericom.

12-12-0004

PT0395-1

01/05/13

9


型号：	PI4ULS5V4557ZHEX
厂家：	PERICOM SEMICONDUCTOR CORPORATION
描述：	Microprocessor Circuit, PQCC16 外围集成电路
文件：	总9页 (文件大小：262K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PI4ULS5V4557ZHEX [PERICOM]

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