VTP1012 [PERKINELMER]
VTP Process Photodiodes; VTP工艺光电二极管
| 型号： | VTP1012 |
| 厂家： | 
PERKINELMER OPTOELECTRONICS |
| 描述： | VTP Process Photodiodes |
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VTP Process Photodiodes
VTP1012
PACKAGE DIMENSIONS inch (mm)
CASE 17 TO-46 HERMETIC
CHIP ACTIVE AREA: .0025 in2 (1.6 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Small area planar silicon photodiode in a “flat”
window TO-46 package. Cathode is common to
the case. These diodes exhibit low dark current
under reverse bias and fast speed of response.
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP1012
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
10
Typ.
Max.
I
Short Circuit Current
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
17
µA
%/°C
mV
SC
TC I
I
.20
SC
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
350
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
7
6
D
R
Shunt Resistance
.5
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.011
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
400
50
1150
nm
range
λ
925
140
±35
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-14
NEP
D*
8.7 x 10 (Typ.)
12
1.5 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
49
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