74HCT4316PW [NXP]

Quad bilateral switches; 四双边开关
74HCT4316PW
型号: 74HCT4316PW
厂家: NXP    NXP
描述:

Quad bilateral switches
四双边开关

复用器 开关 复用器或开关 信号电路 光电二极管
文件: 总15页 (文件大小:134K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
DATA SHEET  
For a complete data sheet, please also download:  
The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications  
The IC06 74HC/HCT/HCU/HCMOS Logic Package Information  
The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines  
74HC/HCT4316  
Quad bilateral switches  
September 1993  
Product specification  
File under Integrated Circuits, IC06  
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
The 74HC/HCT4316 have four independent analog  
switches. Each switch has two input/output terminals  
(nY, nZ) and an active HIGH select input (nS). When the  
enable input (E) is HIGH, all four analog switches are  
turned off.  
FEATURES  
Low “ON” resistance:  
160 (typ.) at VCC VEE = 4.5 V  
120 (typ.) at VCC VEE = 6.0 V  
80 (typ.) at VCC VEE = 9.0 V  
Current through a switch will not cause additional VCC  
current provided the voltage at the terminals of the switch  
is maintained within the supply voltage range;  
Logic level translation:  
to enable 5 V logic to communicate  
with ± 5 V analog signals  
V
CC >> (VY, VZ) >> VEE. Inputs nY and nZ are electrically  
Typical “break before make” built in  
Output capability: non-standard  
ICC category: MSI  
equivalent terminals.  
VCC and GND are the supply voltage pins for the digital  
control inputs (E and nS). The VCC to GND ranges are 2.0  
to 10.0 V for HC and 4.5 to 5.5 V for HCT.  
The analog inputs/outputs (nY and nZ) can swing between  
GENERAL DESCRIPTION  
V
V
CC as a positive limit and VEE as a negative limit.  
CC VEE may not exceed 10.0 V.  
The 74HC/HCT4316 are high-speed Si-gate CMOS  
devices. They are specified in compliance with JEDEC  
standard no. 7A.  
See the “4016” for the version without logic level  
translation.  
QUICK REFERENCE DATA  
VEE = GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns  
TYPICAL  
SYMBOL  
PARAMETER  
CONDITIONS  
UNIT  
HC  
HCT  
tPZH  
turn “ON” time  
E to VOS  
CL = 15 pF; RL = 1 k;  
VCC = 5 V  
19  
16  
19  
17  
ns  
ns  
nS to VOS  
tPZL  
turn “ON” time  
E to VOS  
19  
16  
24  
21  
ns  
ns  
nS to VOS  
t
PHZ/ tPLZ turn “OFF” time  
E to VOS  
20  
16  
3.5  
13  
5
21  
19  
3.5  
14  
5
ns  
ns  
pF  
pF  
pF  
nS to VOS  
CI  
input capacitance  
CPD  
CS  
power dissipation capacitance per switch  
max. switch capacitance  
notes 1 and 2  
Notes  
CL = output load capacitance in pF  
CS = max. switch capacitance in pF  
VCC = supply voltage in V  
1. CPD is used to determine the dynamic power  
dissipation (PD in µW):  
PD = CPD × VCC2 × fi + ∑ { (CL + CS) × VCC2 × fo }  
where:  
2. For HC the condition is VI = GND to VCC  
fi = input frequency in MHz  
For HCT the condition is VI = GND to VCC 1.5 V  
fo = output frequency in MHz  
{ (CL + CS) × VCC2 × fo } = sum of outputs  
September 1993  
2
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
ORDERING INFORMATION  
See “74HC/HCT/HCU/HCMOS Logic Package Information”.  
PIN DESCRIPTION  
PIN NO.  
SYMBOL  
NAME AND FUNCTION  
independent inputs/outputs  
independent inputs/outputs  
enable input (active LOW)  
ground (0 V)  
1, 4, 10, 13  
1Z to 4Z  
1Y to 4Y  
E
2, 3, 11, 12  
7
8
GND  
9
VEE  
negative supply voltage  
select inputs (active HIGH)  
positive supply voltage  
15, 5, 6, 14  
16  
1S to 4S  
VCC  
(b)  
Fig.1 Pin configuration.  
Fig.2 Logic symbol.  
Fig.3 IEC logic symbol.  
September 1993  
3
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
FUNCTION TABLE  
INPUTS  
SWITCH  
E
nS  
L
L
L
H
off  
on  
H
X
off  
Note  
1. H = HIGH voltage level  
L = LOW voltage level  
X = don’t care  
APPLICATIONS  
Signal gating  
Modulation  
Demodulation  
Chopper  
Fig.4 Functional diagram.  
Fig.5 Schematic diagram (one switch).  
September 1993  
4
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
RATINGS  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
Voltages are referenced to VEE = GND (ground = 0 V)  
SYMBOL  
PARAMETER  
DC supply voltage  
MIN.  
0.5  
MAX.  
+11.0  
20  
UNIT  
CONDITIONS  
VCC  
±IIK  
±ISK  
±IS  
V
DC digital input diode current  
DC switch diode current  
DC switch current  
mA  
mA  
mA  
mA  
mA  
for VI < −0.5 V or VI > VCC + 0.5 V  
for VS < −0.5 V or VS > VCC + 0.5 V  
for 0.5 V < VS < VCC + 0.5 V  
20  
25  
±IEE  
DC VEE current  
20  
±ICC  
;
DC VCC or GND current  
50  
±IGND  
Tstg  
storage temperature range  
65  
+150  
°C  
Ptot  
power dissipation per package  
for temperature range: 40 to +125 °C  
74HC/HCT  
plastic DIL  
750  
500  
100  
mW  
mW  
mW  
above +70 °C: derate linearly with 12 mW/K  
above +70 °C: derate linearly with 8 mW/K  
plastic mini-pack (SO)  
power dissipation per switch  
PS  
Note to ratings  
To avoid drawing VCC current out of terminal Z, when switch current flows in terminals Yn, the voltage drop across the  
bidirectional switch must not exceed 0.4 V. If the switch current flows into terminals Z, no VCC current will flow out of  
terminal Yn. In this case there is no limit for the voltage drop across the switch, but the voltages at Yn and Z may not  
exceed VCC or VEE  
.
RECOMMENDED OPERATING CONDITIONS  
SYMBOL PARAMETER  
74HC  
74HCT  
UNIT  
CONDITIONS  
min. typ. max. min. typ. max.  
VCC  
VCC  
VI  
DC supply voltage VCCGND  
DC supply voltage VCCVEE  
DC input voltage range  
2.0  
5.0 10.0 4.5  
5.0 10.0 2.0  
VCC GND  
VCC VEE  
+85 40  
+125 40  
1000  
5.0 5.5  
5.0 10.0  
VCC  
V
see Figs 6 and 7  
see Figs 6 and 7  
2.0  
V
GND  
VEE  
V
VS  
DC switch voltage range  
VCC  
V
Tamb  
Tamb  
tr, tf  
operating ambient temperature range 40  
operating ambient temperature range 40  
input rise and fall times  
+85  
°C  
see DC and AC  
CHARACTERISTICS  
+125 °C  
ns  
VCC = 2.0 V  
VCC = 4.5 V  
VCC = 6.0 V  
VCC = 10.0 V  
500  
400  
6.0  
6.0 500  
250  
September 1993  
5
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
Fig.6 Guaranteed operating area as a function of  
the supply voltages for 74HC4316.  
Fig.7 Guaranteed operating area as a function of  
the supply voltages for 74HCT4316.  
DC CHARACTERISTICS FOR 74HC/HCT  
For 74HC: VCC GND or VCC VEE = 2.0, 4.5, 6.0 and 9.0 V  
For 74HCT: VCC GND = 4.5 and 5.5 V; VCC VEE = 2.0, 4.5, 6.0 and 9.0 V  
Tamb (°C)  
TEST CONDITIONS  
74HC/HCT  
SYMBOL PARAMETER  
UNIT VCC VEE  
IS  
Vis VI  
+25  
40 to +85 40 to +125  
(V)  
(V) (µA)  
min. typ. max. min. max. min. max.  
RON  
RON  
RON  
RON  
ON resistance  
(peak)  
2.0  
0
0
0
100 VCC VIH  
1000 to or  
1000 VEE VIL  
160 320  
120 240  
85  
400  
300  
215  
480  
360  
255  
4.5  
6.0  
4.5  
170  
4.5 1000  
ON resistance  
(rail)  
160  
80  
70  
2.0  
4.5  
6.0  
4.5  
0
0
0
100 VEE VIH  
160  
140  
120  
200  
175  
150  
240  
210  
180  
1000  
1000  
or  
VIL  
60  
4.5 1000  
ON resistance  
(rail)  
170  
90  
80  
2.0  
4.5  
6.0  
4.5  
0
0
0
100 VCC VIH  
180  
160  
135  
225  
200  
170  
270  
240  
205  
1000  
1000  
or  
VIL  
65  
4.5 1000  
maximum ON  
resistance  
between any  
two channels  
16  
9
2.0  
4.5  
6.0  
4.5  
0
0
0
4.5  
VCC VH  
to  
or  
VEE VIL  
6
Notes  
1. At supply voltages (VCC VEE) approaching 2.0 V the analog switch ON-resistance becomes extremely non-linear.  
Therefore it is recommended that these devices are used to transmit digital signals only, when using these supply  
voltages.  
2. For test circuit measuring RON see Fig.8.  
September 1993  
6
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
DC CHARACTERISTICS FOR 74HC  
Voltages are referenced to GND (ground = 0 V)  
Tamb (°C)  
TEST CONDITIONS  
74HC  
SYMBOL PARAMETER  
UNIT VCC VEE  
(V) (V)  
VI  
OTHER  
+25  
40 to +85 40 to +125  
min. typ. max. min. max. min. max.  
VIH  
HIGH level  
input voltage  
1.5  
3.15 2.4  
4.2  
6.3  
1.2  
1.5  
3.15  
4.2  
6.3  
1.5  
3.15  
4.2  
6.3  
V
V
2.0  
4.5  
6.0  
9.0  
3.2  
4.3  
VIL  
LOW level  
input voltage  
0.8 0.5  
2.1 1.35  
2.8 1.8  
4.3 2.7  
0.5  
1.35  
1.8  
2.7  
0.5  
1.35  
1.8  
2.7  
2.0  
4.5  
6.0  
9.0  
±II  
input leakage  
current  
0.1  
0.2  
1.0  
2.0  
1.0  
2.0  
µA  
µA  
µA  
6.0  
10.0  
0
0
VCC  
or  
GND  
±IS  
±IS  
ICC  
analog switch  
OFF-state  
current  
0.1  
0.1  
1.0  
1.0  
1.0  
1.0  
10.0  
10.0  
0
0
VIH  
or  
VIL  
VS  
=
V
CC VEE  
(see Fig.10)  
VS  
CC VEE  
analog switch  
ON-state  
current  
VIH  
or  
VIL  
=
V
(see Fig.11)  
quiescent  
supply current  
8.0  
16.0  
80.0  
160.0  
160.0 µA  
320.0  
6.0  
10.0  
0
0
VCC  
or  
Vis = VEE  
or VCC  
OS = VCC  
or VEE  
;
GND  
V
September 1993  
7
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
AC CHARACTERISTICS FOR 74HC  
GND = 0 V; tr = tf = 6 ns; CL = 50 pF  
Tamb (°C)  
TEST CONDITIONS  
74HC  
SYMBOL PARAMETER  
UNIT VCC VEE  
OTHER  
+25  
40 to +85 40 to +125  
(V) (V)  
min. typ. max. min. max. min. max.  
tPHL/ tPLH propagation  
delay  
17  
6
5
60  
12  
10  
8
75  
15  
13  
10  
90  
18  
15  
12  
ns  
ns  
ns  
ns  
ns  
2.0  
4.5  
6.0  
0
0
0
RL = ; CL = 50 pF  
(see Fig.18)  
Vis to Vos  
4
4.5 4.5  
t
PZH/ tPZL turn “ON” time  
E to Vos  
61  
22  
18  
19  
205  
41  
35  
255  
51  
43  
310  
62  
53  
2.0  
4.5  
6.0  
0
0
0
RL = 1 k;  
CL = 50 pF  
(see Figs 19, 20 and  
37  
47  
56  
4.5 4.5 21)  
tPZH/ tPZL turn “ON” time  
nS to Vos  
52  
19  
15  
17  
175  
35  
30  
220  
44  
37  
265  
53  
45  
2.0  
4.5  
6.0  
0
0
0
RL = 1 k;  
CL = 50 pF  
(see Figs 19, 20 and  
34  
43  
51  
4.5 4.5 21)  
t
PHZ/ tPLZ turn “OFF”  
63  
23  
18  
21  
220  
44  
37  
275  
55  
47  
330  
66  
56  
2.0  
4.5  
6.0  
0
0
0
RL = 1 k;  
CL = 50 pF  
(see Figs 19, 20 and  
time  
E to Vos  
39  
49  
59  
4.5 4.5 21)  
tPHZ/ tPLZ turn “OFF”  
time  
55  
20  
16  
18  
175  
35  
30  
220  
44  
37  
265  
53  
45  
2.0  
4.5  
6.0  
0
0
0
RL = 1 k;  
CL = 50 pF  
(see Figs 19, 20 and  
nS to Vos  
36  
45  
54  
4.5 4.5 21)  
September 1993  
8
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
DC CHARACTERISTICS FOR 74HCT  
Voltages are referenced to GND (ground = 0)  
Tamb (°C)  
TEST CONDITIONS  
74HCT  
SYMBOL PARAMETER  
UNIT VCC VEE  
(V) (V)  
VI  
OTHER  
+25  
40 to +85 40 to +125  
min. typ. max. min. max. min. max.  
VIH  
VIL  
±II  
HIGH level  
input voltage  
2.0  
1.6  
1.2  
2.0  
2.0  
V
4.5  
to  
5.5  
LOW level  
input voltage  
0.8  
0.1  
0.1  
0.1  
0.8  
1.0  
1.0  
1.0  
0.8  
1.0  
1.0  
1.0  
V
4.5  
to  
5.5  
input leakage  
current  
µA  
µA  
µA  
5.5  
0
VCC  
or  
GND  
±IS  
±IS  
ICC  
analog switch  
OFF-state  
current  
10.0 0  
10.0 0  
VIH  
or  
VIL  
VS  
=
V
CC VEE  
(see Fig.10)  
VS  
CC VEE  
analog switch  
ON-state  
current  
VIH  
or  
VIL  
=
V
(see Fig.11)  
quiescent  
8.0  
80.0  
160.0 µA  
5.5  
0
VCC  
Vis = VEE  
supply current  
16.0  
160.0  
320.0  
5.0 5.0 or  
GND  
or VCC  
OS = VCC  
or VEE  
other inputs  
;
V
ICC  
additional  
quiescent  
100  
360  
450  
490  
µA  
4.5  
to  
0
VCC  
2.1 V at VCC or  
supply current  
per input pin for  
unit load  
5.5  
GND  
coefficient is 1  
(note 1)  
Note  
1. The value of additional quiescent supply current (ICC) for a unit load of 1 is given here.  
To determine ICC per input, multiply this value by the unit load coefficient shown in the table below.  
INPUT  
UNIT LOAD COEFFICIENT  
nS  
E
0.50  
0.50  
September 1993  
9
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
Fig.8 Test circuit for measuring RON  
.
Fig.9 Typical RON as a function of input voltage Vis for Vis = 0 to VCC VEE  
.
Fig.10 Test circuit for measuring OFF-state current.  
Fig.11 Test circuit for measuring ON-state current.  
10  
September 1993  
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
AC CHARACTERISTICS FOR 74HCT  
GND = 0 V; tr = tf = 6 ns; CL = 50 pF  
Tamb (°C)  
TEST CONDITIONS  
74HCT  
SYMBOL PARAMETER  
UNIT VCC VEE  
(V) (V)  
OTHER  
+25  
40 TO +85 40 to +125  
min. typ. max. min. max. min. max.  
tPHL/ tPLH propagation delay  
Vis to Vos  
6
4
12  
8
15  
10  
18  
12  
ns  
4.5  
4.5  
0
RL = ;  
4.5 CL = 50 pF  
(see Fig.18)  
tPZH  
tPZL  
tPZH  
tPZL  
turn “ON” time  
E to Vos  
22  
21  
44  
42  
55  
53  
66  
63  
ns  
ns  
ns  
ns  
ns  
4.5  
4.5  
0
RL = 1 k;  
4.5 CL = 50 pF  
(see Figs 19,  
20 and 21)  
turn “ON” time  
E to Vos  
28  
21  
56  
42  
70  
53  
84  
63  
4.5  
4.5  
0
4.5  
turn “ON” time  
nS to Vos  
20  
17  
40  
34  
53  
43  
60  
51  
4.5  
4.5  
0
RL = 1 k;  
4.5 CL = 50 pF  
(see Figs 19,  
20 and 21)  
turn “ON” time  
nS to Vos  
25  
17  
50  
34  
63  
43  
75  
51  
4.5  
4.5  
0
4.5  
t
PHZ/ tPLZ turn “OFF” time  
25  
23  
50  
46  
63  
58  
75  
69  
4.5  
4.5  
0
RL = 1 k;  
E to Vos  
4.5 CL = 50 pF  
(see Figs 19,  
20 and 21)  
t
PHZ/ tPLZ turn “OFF” time  
nS to Vos  
22  
20  
44  
40  
55  
50  
66  
60  
ns  
4.5  
4.5  
0
RL = 1 k;  
4.5 CL = 50 pF  
(see Figs 19,  
20 and 21)  
September 1993  
11  
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
ADDITIONAL AC CHARACTERISTICS FOR 74HC/HCT  
Recommended conditions and typical values  
GND = 0 V; Tamb = 25 °C  
VCC  
(V)  
VEE  
(V)  
Vis(p-p)  
(V)  
SYMBOL  
PARAMETER  
typ. UNIT  
CONDITIONS  
sine-wave distortion  
f = 1 kHz  
0.80  
0.40  
%
%
2.25 2.25 4.0  
4.5 4.5 8.0  
2.25 2.25 4.0  
4.5 4.5 8.0  
RL = 10 k; CL = 50 pF  
(see Fig.14)  
sine-wave distortion  
f = 10 kHz  
2.40  
1.20  
%
%
RL = 10 k; CL = 50 pF  
(see Fig.14)  
switch “OFF” signal  
feed-through  
50  
50  
dB  
dB  
2.25 2.25 note 1 RL = 600 ; CL = 50 pF  
4.5 4.5 f = 1 MHz (see Figs 12 and 15)  
2.25 2.25 note 1 RL = 600 ; CL = 50 pF;  
crosstalk between  
any two switches  
60  
60  
dB  
dB  
4.5  
4.5  
f = 1 MHz; (see Fig.16)  
V(p-p)  
crosstalk voltage between  
control and any switch  
(peak-to-peak value)  
110  
220  
mV  
mV  
4.5  
4.5  
0
4.5  
RL = 600 k; CL = 50 pF;  
f = 1 MHz (E or nS,  
square-wave between VCC  
and GND, tr = tf = 6 ns)  
(see Fig.17)  
fmax  
minimum frequency response  
(3 dB)  
150  
160  
MHz 2.25 2.25 note 2 RL = 50 ; CL = 10 pF  
MHz 4.5  
4.5  
(see Figs 13 and 14)  
CS  
maximum switch capacitance  
5
pF  
Notes  
1. Adjust input voltage Vis to 0 dBm level (0 dBm = 1 mW into 600 ).  
2. Adjust input voltage Vis to 0 dBm level at VOS for 1 MHz (0 dBm = 1 mW into 50 ).  
General note  
Vis is the input voltage at an nY or nZ terminal, whichever is assigned as an input.  
Vos is the output voltage at an nY or nZ terminal, whichever is assigned as an output.  
Test conditions:  
VCC = 4.5 V; GND = 0 V; VEE = 4.5 V;  
RL = 50 ; Rsource = 1 k.  
Fig.12 Typical switch “OFF” signal feed-through as a function of frequency.  
September 1993  
12  
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
Test conditions:  
VCC = 4.5 V; GND = 0 V; VEE = 4.5 V;  
RL = 50 ; Rsource = 1 k.  
Fig.13 Typical frequency response.  
Fig.14 Test circuit for measuring sine-wave  
distortion and minimum frequency response.  
Fig.15 Test circuit for measuring switch “OFF”  
signal feed-through.  
Fig.16 Test circuit for measuring crosstalk between any two switches.  
(a) channel ON condition; (b) channel OFF condition.  
The crosstalk is defined as follows  
(oscilloscope output):  
Fig.17 Test circuit for measuring crosstalk between control and any switch.  
September 1993  
13  
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
AC WAVEFORMS  
Fig.18 Waveforms showing the input (Vis) to output  
(Vos) propagation delays.  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT : VM = 1.3 V; VI = GND to 3 V.  
Fig.19 Waveforms showing the turn-ON and  
turn-OFF times.  
September 1993  
14  
Philips Semiconductors  
Product specification  
Quad bilateral switches  
74HC/HCT4316  
TEST CIRCUIT AND WAVEFORMS  
Fig.20 Test circuit for measuring AC performance.  
Fig.21 Input pulse definitions.  
Conditions  
TEST  
SWITCH  
Vis  
tPZH  
tPZL  
tPHZ  
tPLZ  
VEE  
VCC  
VEE  
VCC  
open  
VCC  
VEE  
VCC  
VEE  
others  
pulse  
tr; tf  
FAMILY AMPLITUDE  
VM  
fmax  
PULSE WIDTH  
;
OTHER  
74HC  
VCC  
50%  
1.3 V  
< 2 ns  
< 2 ns  
6 ns  
6 ns  
74HCT  
3.0 V  
Definitions for Figs 20 and 21:  
CL = load capacitance including jig and probe capacitance (see AC CHARACTERISTICS for values).  
RT = termination resistance should be equal to the output impedance ZO of the pulse generator.  
tr = tf = 6 ns; when measuring fmax, there is no constraint to tr, tf with 50% duty factor.  
PACKAGE OUTLINES  
See “74HC/HCT/HCU/HCMOS Logic Package Outlines”.  
September 1993  
15  

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