74LVC2G38GM [NXP]
Dual 2-input NAND gate (open drain); 双路2输入与非门(漏极开路)型号: | 74LVC2G38GM |
厂家: | NXP |
描述: | Dual 2-input NAND gate (open drain) |
文件: | 总15页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74LVC2G38
Dual 2-input NAND gate
(open drain)
Product specification
2004 Oct 18
Supersedes data of 2003 Oct 27
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
FEATURES
DESCRIPTION
• Wide supply voltage range from 1.65 V to 5.5 V
• 5 V tolerant outputs for interfacing with 5 V logic
• High noise immunity
The 74LVC2G38 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices.
These feature allows the use of these devices as
translators in a mixed 3.3 V and 5 V environment.
• Complies with JEDEC standard:
– JESD8-7 (1.65 V to 1.95 V)
– JESD8-5 (2.3 V to 2.7 V)
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
– JESD8B/JESD36 (2.7 V to 3.6 V).
• ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
• ±24 mA output drive (VCC = 3.0 V)
• CMOS low power consumption
• Open drain outputs
The 74LVC2G38 provides the 2-input NAND function.
The outputs of the 74LVC2G38 devices are open drain
and can be connected to other open-drain outputs to
implement active-LOW, wired-OR or active-HIGH
wired-AND functions.
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Inputs accept voltages up to 5 V
• Multiple package options
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPZL/tPLZ
propagation delay inputs nA and nB to
output nY
VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ
3.0
ns
ns
ns
ns
ns
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 1.8
VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.5
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.1
VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.5
CI
input capacitance
2.5
pF
pF
CPD
power dissipation capacitance per gate VCC = 3.3 V; notes 1 and 2
5
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
2. The condition is VI = GND to VCC
.
2004 Oct 18
2
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
FUNCTION TABLE
See note 1.
INPUT
OUTPUT
nA
nB
nY
L
L
L
H
L
Z
Z
Z
L
H
H
H
Note
1. H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF-state.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
TEMPERATURE RANGE
PINS
PACKAGE
TSSOP8
VSSOP8
XSON8
MATERIAL
plastic
CODE
MARKING
Y38
74LVC2G38DP
74LVC2G38DC
74LVC2G38GM
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
8
8
8
SOT505-2
SOT765-1
SOT833-1
plastic
Y38
plastic
Y38
PINNING
PIN
1
SYMBOL
DESCRIPTION
1A
data input
2
1B
data input
3
2Y
data output
ground (0 V)
data input
4
GND
2A
5
6
2B
data input
7
1Y
data output
supply voltage
8
VCC
2004 Oct 18
3
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
38
1A
1B
1
2
3
4
8
7
6
5
V
CC
1
2
3
4
8
7
6
5
1A
1B
V
CC
1Y
2B
2A
1Y
2B
2A
38
2Y
2Y
GND
001aab829
GND
001aab830
Transparent top view
Fig.1 Pin configuration TSSOP8 and VSSOP8.
Fig.2 Pin configuration XSON8.
1
handbook, halfpage
&
handbook, halfpage
7
1
2
1A
1B
1Y
2Y
7
3
2
5
6
2A
2B
5
&
3
6
MNB129
MNB130
Fig.3 Logic symbol.
Fig.4 Logic symbol (IEEE/IEC).
2004 Oct 18
4
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
Y
handbook, halfpage
A
B
GND
MNB131
Fig.5 Logic diagram (one gate).
2004 Oct 18
5
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
1.65
MAX.
5.5
UNIT
V
V
V
V
VI
input voltage
0
0
0
5.5
VCC
5.5
VO
output voltage
active mode
VCC = 1.65 V to 5.5 V; disable
mode
VCC = 0 V; Power-down mode
0
5.5
+125
20
V
Tamb
tr, tf
operating ambient temperature
input rise and fall times
−40
0
°C
VCC = 1.65 V to 2.7 V
VCC = 2.7 V to 5.5 V
ns/V
ns/V
0
10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +6.5
V
IIK
input diode current
input voltage
VI < 0 V
note 1
−
−50
mA
V
VI
−0.5
−
+6.5
±50
IOK
VO
output diode current
output voltage
VO > VCC or VO < 0 V
mA
V
active mode; notes 1 and 2
−0.5
+6.5
+6.5
±50
Power-down mode; notes 1 and 2 −0.5
V
IO
output source or sink current
VCC or GND current
storage temperature
power dissipation
VO = 0 V to VCC
−
mA
mA
°C
mW
ICC, IGND
Tstg
−
±100
+150
300
−65
−
PD
Tamb = −40 °C to +125 °C
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
2004 Oct 18
6
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
OTHER
VCC (V)
Tamb = −40 °C to +85 °C; note 1
VIH
HIGH-level input voltage
LOW-level input voltage
1.65 to 1.95 0.65 × VCC
−
−
−
−
−
−
−
−
−
−
−
−
V
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
1.7
V
V
V
V
V
V
V
2.0
0.7 × VCC
VIL
−
−
−
−
0.35 × VCC
0.7
0.8
0.3 × VCC
VOL
LOW-level output voltage VI = VIH or VIL
IO = 100 µA
IO = 4 mA
IO = 8 mA
IO = 12 mA
IO = 24 mA
IO = 32 mA
1.65 to 5.5
−
−
−
−
−
−
−
−
−
0.1
V
1.65
2.3
2.7
3.0
4.5
5.5
0
0.08
0.14
0.19
0.37
0.43
±0.1
±0.1
0.45
0.3
V
V
0.4
V
0.55
0.55
±5
V
V
ILI
input leakage current
VI = 5.5 V or GND
VI or VO = 5.5 V
µA
µA
Ioff
power OFF leakage
current
±10
ICC
quiescent supply current VI = VCC or GND;
IO = 0 A
5.5
−
−
0.1
5
10
µA
µA
∆ICC
additional quiescent
supply current per pin
VI = VCC − 0.6 V;
IO = 0 A
2.3 to 5.5
500
2004 Oct 18
7
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
TEST CONDITIONS
OTHER VCC (V)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Tamb = −40 °C to +125 °C
VIH
HIGH-level input voltage
LOW-level input voltage
1.65 to 1.95 0.65 × VCC
−
−
−
−
−
−
−
−
−
−
−
−
V
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7 to 3.6
4.5 to 5.5
1.7
V
V
V
V
V
V
V
2.0
0.7 × VCC
VIL
−
−
−
−
0.35 × VCC
0.7
0.8
0.3 × VCC
VOL
LOW-level output voltage VI = VIH or VIL
IO = 100 µA
IO = 4 mA
IO = 8 mA
IO = 12 mA
IO = 24 mA
IO = 32 mA
1.65 to 5.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
1.65
2.3
2.7
3.0
4.5
5.5
0
0.70
0.45
0.60
0.80
0.80
±20
±20
V
V
V
V
V
ILI
input leakage current
VI = 5.5 V or GND
VI or VO = 5.5 V
µA
µA
Ioff
power OFF leakage
current
ICC
quiescent supply current VI = VCC or GND;
IO = 0 A
5.5
−
−
−
−
40
µA
µA
∆ICC
additional quiescent
supply current per pin
VI = VCC − 0.6 V;
IO = 0 A
2.3 to 5.5
5000
Note
1. All typical values are measured at Tamb = 25 °C.
2004 Oct 18
8
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
AC CHARACTERISTICS
GND = 0 V.
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
WAVEFORMS
V
CC (V)
Tamb = −40 °C to +85 °C; note 1
tPZL/tPLZ propagation delay inputs nA
and nB to output nY
see Figs 6 and 7 1.65 to 1.95
1.2
3.0
1.8
2.5
2.1
1.5
8.6
4.8
4.4
4.1
3.3
ns
ns
ns
ns
ns
2.3 to 2.7
2.7
0.7
0.7
0.7
0.5
3.0 to 3.6
4.5 to 5.5
Tamb = −40 °C to +125 °C
tPZL/tPLZ
propagation delay inputs nA
and nB to output nY
see Figs 6 and 7 1.65 to 1.95
1.2
0.7
0.7
0.7
0.5
−
−
−
−
−
10.8
6.0
5.5
5.2
4.2
ns
ns
ns
ns
ns
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
Note
1. All typical values are measured at Tamb = 25 °C.
AC WAVEFORMS
V
I
nA, nB input
V
t
M
GND
t
PLZ
PZL
V
CC
nY output
V
M
V
V
X
OL
MNB132
INPUT
VCC
VM
VX
VI
tr = tf
1.65 V to 1.95 V 0.5 × VCC
VOL + 0.15 V
VOL + 0.15 V
VOL + 0.3 V
VOL + 0.3 V
VOL + 0.3 V
VCC
VCC
≤ 2.0 ns
≤ 2.0 ns
≤ 2.5 ns
≤ 2.5 ns
≤ 2.5 ns
2.3 V to 2.7 V
2.7 V
0.5 × VCC
1.5 V
2.7 V
2.7 V
VCC
3.0 V to 3.6 V
4.5 V to 5.5 V
1.5 V
0.5 × VCC
Fig.6 Inputs nA and nB to output nY propagation delay times.
2004 Oct 18
9
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
V
EXT
V
CC
R
L
V
I
V
O
PULSE
GENERATOR
D.U.T.
C
R
R
L
L
T
MNA616
VEXT
VCC
VI
CL
RL
tPLH/tPHL
tPZH/tPHZ
tPZL/tPLZ
1.65 V to 1.95 V VCC
30 pF
30 pF
50 pF
50 pF
50 pF
1 kΩ
open
open
open
open
open
GND
GND
GND
GND
GND
2 × VCC
2 × VCC
6 V
2.3 V to 2.7 V
2.7 V
VCC
500 Ω
500 Ω
500 Ω
500 Ω
2.7 V
2.7 V
VCC
3.0 V to 3.6 V
4.5 V to 5.5 V
6 V
2 × VCC
Definitions for test circuit:
R
L = Load resistor.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.7 Load circuitry for switching times.
2004 Oct 18
10
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
PACKAGE OUTLINES
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.00
0.95
0.75
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
4.1
3.9
0.47
0.33
0.70
0.35
8°
0°
mm
1.1
0.65
0.25
0.5
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
2004 Oct 18
11
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.5
0.12
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
2004 Oct 18
12
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 0.95 x 1.95 x 0.5 mm
SOT833-1
b
1
2
3
4
4×
(2)
L
L
1
e
8
7
6
5
e
1
e
1
e
1
8×
(2)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.25
0.17
2.0
1.9
1.0
0.9
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
- - -
04-07-15
04-07-22
SOT833-1
- - -
MO-252
2004 Oct 18
13
Philips Semiconductors
Product specification
Dual 2-input NAND gate (open drain)
74LVC2G38
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Oct 18
14
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R20/02/pp15
Date of release: 2004 Oct 18
Document order number: 9397 750 13785
相关型号:
74LVC2G38GM-G
IC LVC/LCX/Z SERIES, DUAL 2-INPUT NAND GATE, PQCC8, 1.6 X 1.6 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT-902-1, QFN-8, Gate
NXP
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