BF908 [PHILIPS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | BF908 |
| 厂家： | 
PHILIPS SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总8页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF908; BF908R
Dual-gate MOS-FETs
Product specification
1996 Jul 30
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
FEATURES
• High forward transfer admittance
handbook, halfpage
d
4
3
2
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
g
2
• Low noise gain controlled amplifier up to 1 GHz.
g
1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
1
s,b
Top view
MAM039
DESCRIPTION
Fig.1 Simplified outline (SOT143) and
symbol; BF908.
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
d
handbook, age
3
4
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
g
2
g
1
PINNING
2
1
s,b
PIN
SYMBOL
DESCRIPTION
MAM040
Top view
1
2
3
4
s, b
d
source
drain
Fig.2 Simplified outline (SOT143R) and
symbol; BF908R.
g2
g1
gate 2
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
12
UNIT
VDS
ID
drain-source voltage
drain current
−
−
−
−
−
−
−
−
V
40
mA
mW
°C
Ptot
Tj
total power dissipation
200
150
50
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
yfs
36
2.4
20
−
43
mS
pF
Cig1-s
Crs
F
3.1
30
4
f = 1 MHz
f = 800 MHz
45
pF
1.5
2.5
dB
1996 Jul 30
2
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
12
UNIT
drain-source voltage
drain current
−
−
−
−
V
ID
40
10
10
mA
mA
mA
±IG1
±IG2
Ptot
gate 1 current
gate 2 current
total power dissipation
BF908
see Fig.3; note 1
up to Tamb = 50 °C
up to Tamb = 40 °C
−
−
200
200
+150
150
mW
mW
°C
BF908R
Tstg
Tj
storage temperature
operating junction temperature
−65
−
°C
Note
1. Device mounted on a printed-circuit board.
MRC275
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
BF908
BF908R
0
0
50
100
150
T
200
o
( C)
amb
Fig.3 Power derating curves.
1996 Jul 30
3
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
BF908
500
550
K/W
K/W
BF908R
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA
±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA
8
−
20
20
2
V
8
−
−
3
−
−
−
V
−V(P)G1-S
−V(P)G2-S
IDSS
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
VG2-S = 4 V; VDS = 8 V; ID = 20 µA
VG1-S = 4 V; VDS = 8 V; ID = 20 µA
VG2-S = 4 V; VDS = 8 V; VG1-S = 0
VG2-S = VDS = 0; VG1-S = 5 V
−
V
−
1.5
27
50
50
V
15
−
mA
nA
nA
±IG1-SS
±IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
yfs
PARAMETER
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
CONDITIONS
pulsed; Tj = 25 °C; f = 1 MHz
f = 1 MHz
MIN.
36
TYP. MAX. UNIT
43
50
4
mS
pF
pF
pF
fF
Cig1-s
Cig2-s
Cos
2.4
1.2
1.2
20
−
3.1
1.8
1.7
30
f = 1 MHz
2.5
2.2
45
1.2
2.5
f = 1 MHz
Crs
reverse transfer capacitance
noise figure
f = 1 MHz
F
f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = GSopt; BS = BSopt
0.6
1.5
dB
dB
−
1996 Jul 30
4
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
MRC281
MRC282
40
30
handbook, halfpage
handbook, halfpage
V
= 4 V
V
= 0.3 V
G2-S
G1-S
I
D
(mA)
I
D
(mA)
3 V
2 V
30
0.2 V
0.1 V
0 V
20
1.5 V
1 V
20
10
0
0.5 V
0 V
10
−0.1 V
−0.2 V
−0.3 V
0
0
4
8
12
16
−0.6
−0.4
−0.2
0
0.2
0.4
0.6
V
(V)
V
(V)
DS
G1-S
VDS = 8 V; Tj = 25 °C.
VG2-S = 4 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
Fig.5 Output characteristics; typical values.
MRC280
MRC276
50
60
4 V
Y
fs
3 V
2 V
Y
fs
(mS)
40
(mS)
1.5 V
40
30
20
10
0
1 V
20
0.5 V
V
= 0 V
G2-S
5
0
40
0
40
80
120
160
( C)
0
10
15
20
25
(mA)
o
T
I
j
D
VDS = 8 V; Tj = 25 °C.
VDS = 8 V; VG2-S = 4 V; ID = 15 mA.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
Fig.7 Forward transfer admittance as a function
of junction temperature; typical values.
1996 Jul 30
5
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
Table 1 Scattering parameters
s11
s21
s12
s22
f
(MHz)
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
V
DS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
50
100
200
300
400
500
600
700
800
900
0.998
0.994
0.979
0.962
0.939
0.914
0.892
0.865
0.837
0.811
0.785
−5.1
−10.4
−20.8
−30.3
−40.1
−49.1
−57.1
−64.4
−71.6
−78.1
−84.5
3.537
3.502
3.450
3.318
3.234
3.093
2.912
2.774
2.616
2.479
3.329
173.5
167.7
154.9
143.7
131.9
120.7
111.1
101.0
91.4
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.003
98.2
88.8
74.6
69.5
65.6
64.4
63.1
65.2
70.8
87.4
108.0
0.996
0.994
0.987
0.983
0.980
0.974
0.969
0.966
0.965
0.965
0.966
−2.4
−4.9
−9.5
−13.9
−18.5
−22.8
−27.0
−31.2
−35.4
−39.4
−43.7
81.9
1000
72.5
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
50
100
200
300
400
500
600
700
800
900
1000
0.998
0.994
0.976
0.957
0.934
0.907
0.885
0.851
0.826
0.797
0.773
−5.3
−10.9
−21.6
−31.7
−41.7
−51.1
−59.1
−66.8
−73.9
−80.7
−87.0
3.983
3.943
3.878
3.722
3.614
3.446
3.240
3.072
2.891
2.733
2.569
173.4
167.5
154.7
143.3
131.6
120.4
110.9
100.9
91.3
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.004
95.5
93.6
74.3
70.0
63.5
62.2
59.6
64.8
67.8
85.0
102.9
0.994
0.991
0.984
0.979
0.975
0.969
0.964
0.961
0.959
0.958
0.958
−2.4
−5.0
−9.7
−14.2
−18.8
−23.2
−27.4
−31.6
−35.9
−40.0
−44.2
81.9
72.8
Table 2 Noise data
Γopt
f
Fmin
(dB)
rn
(MHz)
(ratio)
(deg)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
800 1.50
DS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
800 1.50
0.720
0.700
56.7
59.2
0.580
0.520
V
1996 Jul 30
6
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
PACKAGE OUTLINES
3.0
2.8
B
0.150
0.090
1.9
A
B
M
0.2
0.75
0.60
A
4
3
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.8 SOT143.
3.0
2.8
B
0.150
0.090
1.9
A
M
0.2
0.40
0.25
A
3
4
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
2
1
1.1
max
0.48
0.38
0.88
0.78
o
MBC844
30
max
1.7
B
0.1 M
TOP VIEW
Dimensions in mm.
Fig.9 SOT143R.
1996 Jul 30
7
Philips Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 30
8
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