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BLF879P,112 [NXP]

BLF879P;
BLF879P,112
型号： BLF879P,112
厂家： NXP    NXP
描述：

BLF879P
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BLF879P; BLF879PS  
UHF power LDMOS transistor  
Rev. 3 — 12 July 2013  
Product data sheet  
1. Product profile  
1.1 General description  
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial  
applications. The excellent ruggedness of this device makes it ideal for digital and analog  
transmitter applications.  
Table 1.  
Application information  
RF performance at VDS = 42 V unless otherwise specified.  
Mode of operation  
f
PL(AV) PL(M) Gp  
D IMD3 IMDshldr PAR  
(MHz)  
(W) (W) (dB) (%) (dBc) (dBc)  
(dB)  
RF performance in a common source 860 MHz narrowband test circuit  
2-tone, class-AB  
f1 = 860; f2 = 860.1 200  
858 95  
-
-
21  
21  
47 33  
33  
-
-
DVB-T (8k OFDM)  
-
31 [1]  
8.2 [2]  
RF performance in a common source 470 MHz to 860 MHz broadband test circuit  
DVB-T (8k OFDM) 858 95 20 32  
32 [1]  
-
-
8.0 [2]  
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.  
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on  
CCDF.  
1.2 Features and benefits  
Excellent ruggedness  
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W  
High power gain  
High efficiency  
Designed for broadband operation (470 MHz to 860 MHz)  
Internal input matching for high gain and optimum broadband operation  
Excellent reliability  
Easy power control  
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC  
1.3 Applications  
Communication transmitter applications in the UHF band  
Industrial applications in the UHF band  
 
 
 
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLF879P (SOT539A)  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
3
2
4
1
5
3
5
4
[1]  
2
sym117  
BLF879PS (SOT539B)  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
3
2
4
1
5
3
5
4
[1]  
2
sym117  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BLF879P  
flanged balanced ceramic package;  
2 mounting holes; 4 leads  
SOT539A  
BLF879PS  
-
earless flanged balanced ceramic package; 4  
leads  
SOT539B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
-
Max  
104  
+11  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
VGS  
Tstg  
0.5  
65  
-
V
+150  
200  
C  
C  
Tj  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
2 of 16  
 
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ Unit  
[1]  
Rth(j-c)  
thermal resistance from junction to case Tcase = 80 C; PL(AV) = 95 W  
0.15 K/W  
[1] Rth(j-c) is measured under RF conditions.  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
[1]  
[1]  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA  
104 -  
-
V
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 240 mA  
VGS = 0 V; VDS = 42 V  
1.4 1.9 2.4  
-
-
-
2.8 A  
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
38  
-
A
IGSS  
gate leakage current  
VGS = 10 V; VDS = 0 V  
-
-
-
280 nA  
[1]  
[2]  
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 8.5 A  
120  
-
-
-
-
m  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
input capacitance  
VGS = 0 V; VDS = 42 V;  
f = 1 MHz  
-
-
-
210  
72  
output capacitance  
VGS = 0 V; VDS = 42 V;  
f = 1 MHz  
reverse transfer capacitance  
VGS = 0 V; VDS = 42 V;  
f = 1 MHz  
1.5  
[1] ID is the drain current.  
[2] Capacitance values without internal matching.  
Table 7.  
RF characteristics  
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise  
specified.  
Symbol Parameter  
2-Tone, class-AB  
Conditions  
Min Typ Max Unit  
VDS  
IDq  
drain-source voltage  
-
42  
1.3  
-
-
-
-
V
[1]  
quiescent drain current  
average output power  
-
A
PL(AV)  
f1 = 860 MHz;  
f2 = 860.1 MHz  
200  
W
Gp  
power gain  
f1 = 860 MHz;  
f2 = 860.1 MHz  
20  
43  
-
21  
47  
-
-
dB  
%
D  
drain efficiency  
f1 = 860 MHz;  
f2 = 860.1 MHz  
IMD3  
third-order intermodulation distortion  
f1 = 860 MHz;  
f2 = 860.1 MHz  
33 29 dBc  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
3 of 16  
 
 
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
Table 7.  
RF characteristics …continued  
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise  
specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
DVB-T (8k OFDM), class-AB  
VDS  
IDq  
drain-source voltage  
quiescent drain current  
average output power  
power gain  
-
42  
1.3  
-
-
-
-
-
-
V
[1]  
-
A
PL(AV)  
Gp  
f = 858 MHz  
f = 858 MHz  
f = 858 MHz  
f = 858 MHz  
f = 858 MHz  
95  
20  
30  
-
W
dB  
%
21  
33  
D  
drain efficiency  
[2]  
[3]  
IMDshldr intermodulation distortion shoulder  
PAR peak-to-average ratio  
31 28 dBc  
8.2 dB  
-
-
[1] IDq for total device  
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.  
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on  
CCDF.  
aaa-000339  
400  
C
oss  
(pF)  
300  
200  
100  
0
0
20  
40  
60  
V
(V)  
DS  
VGS = 0 V; f = 1 MHz.  
Fig 1. Output capacitance as a function of drain-source voltage; typical values per  
section  
6.1 Ruggedness in class-AB operation  
The BLF879P and BLF879PS are capable of withstanding a load mismatch corresponding  
to VSWR = 40 : 1 through all phases under the following conditions: VDS = 42 V;  
f = 860 MHz at rated power.  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
4 of 16  
 
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
7. Application information  
7.1 Broadband RF figures  
7.1.1 DVB-T  
aaa-000340  
aaa-000341  
24  
-10  
9.5  
PAR  
50  
G
lMD  
(dBc)  
η
D
p
(dB)  
shldr  
(dB)  
(%)  
G
20  
-20  
-30  
-40  
-50  
8.5  
40  
p
PAR  
lMD  
16  
12  
8
7.5  
6.5  
5.5  
30  
20  
10  
shldr  
η
D
400  
500  
600  
700  
800  
900  
400  
500  
600  
700  
800  
900  
f (MHz)  
f (MHz)  
PL(AV) = 95 W; VDS = 42 V; IDq = 1.3 A; measured in a  
common source broadband test circuit as described in  
Section 8.  
PL(AV) = 95 W; VDS = 42 V; IDq = 1.3 A; measured in a  
common source broadband test circuit as described in  
Section 8.  
Fig 2. DVB-T power gain and intermodulation  
distortion shoulder as function of frequency;  
typical values  
Fig 3. DVB-T peak-to-average ratio and drain  
efficiency as function of frequency;  
typical values  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
5 of 16  
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
7.2 Impedance information  
drain 1  
gate 1  
Z
Z
L
i
gate 2  
drain 2  
001aan207  
Fig 4. Definition of transistor impedance  
Table 8.  
Typical push-pull impedance  
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(AV) = 95 W (DVB-T).  
f
Zi  
ZL  
MHz  
300  
325  
350  
375  
400  
425  
450  
475  
500  
525  
550  
575  
600  
625  
650  
675  
700  
725  
750  
775  
800  
825  
850  
875  
900  
925  
950  
975  
1000  
0.617 j1.715  
0.635 j1.355  
0.655 j1.026  
0.677 j0.721  
0.702 j0.435  
0.731 j0.164  
0.762 + j0.096  
0.798 + j0.347  
0.839 + j0.592  
0.884 + j0.833  
0.936 + j1.072  
0.995 + j1.310  
1.063 + j1.549  
1.141 + j1.791  
1.230 + j2.037  
1.334 + j2.289  
1.456 + j2.548  
1.599 + j2.814  
1.768 + j3.090  
1.971 + j3.376  
2.214 + j3.671  
2.510 + j3.975  
2.873 + j4.282  
3.320 + j4.584  
3.875 + j4.865  
4.562 + j5.095  
5.409 + j5.223  
6.426 + j5.166  
7.587 + j4.807  
4.164 + j0.608  
4.101 + j0.636  
4.036 + j0.661  
3.968 + j0.681  
3.898 + j0.696  
3.826 + j0.707  
3.753 + j0.713  
3.679 + j0.715  
3.604 + j0.713  
3.528 + j0.706  
3.453 + j0.695  
3.377 + j0.680  
3.302 + j0.661  
3.227 + j0.638  
3.153 + j0.612  
3.079 + j0.582  
3.007 + j0.549  
2.936 + j0.513  
2.866 + j0.474  
2.797 + j0.432  
2.729 + j0.387  
2.663 + j0.340  
2.599 + j0.291  
2.535 + j0.240  
2.474 + j0.186  
2.414 + j0.131  
2.355 + j0.074  
2.298 + j0.015  
2.243 j0.045  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
6 of 16  
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
7.3 Reliability  
001aam586  
7
6
5
4
3
2
10  
Years  
10  
10  
10  
10  
10  
(1)  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
(8)  
(9)  
(10)  
(11)  
10  
1
0
2
4
6
8
10  
12  
14  
16  
18  
DS(DC)  
20  
(A)  
I
TTF (0.1 % failure fraction).  
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .  
(1) Tj = 100 C  
(2) Tj = 110 C  
(3) Tj = 120 C  
(4) Tj = 130 C  
(5) Tj = 140 C  
(6) Tj = 150 C  
(7) Tj = 160 C  
(8) Tj = 170 C  
(9) Tj = 180 C  
(10) Tj = 190 C  
(11) Tj = 200 C  
Fig 5. BLF879P; BLF879PS electromigration (IDS(DC), total device)  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
7 of 16  
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
8. Test information  
Table 9.  
List of components  
For test circuit, see Figure 6, Figure 7 and Figure 8.  
Component  
B1, B2  
C1  
Description  
Value  
Remarks  
semi rigid coax  
25 ; 49.5 mm  
12 pF  
UT-090C-25 (EZ 90-25)  
[1]  
[1]  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
C2, C3, C4, C5,  
C6  
8.2 pF  
[2]  
[2]  
[2]  
[3]  
[2]  
C7  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
6.8 pF  
C8  
2.7 pF  
C9  
2.2 pF  
C10, C13, C14  
C11, C12  
C15, C16  
100 pF  
10 pF  
4.7 F, 50 V  
Kemet C1210X475K5RAC-TU or  
capacitor of same quality.  
[2]  
C17, C18, C23,  
C24  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
100 pF  
C19, C20  
10 F, 50 V  
TDK C570X7R1H106KT000N or  
capacitor of same quality.  
C21, C22  
C30  
electrolytic capacitor  
470 F, 63 V  
10 pF  
[4]  
[4]  
[4]  
[4]  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
C31  
9.1 pF  
C32  
3.9 pF  
C33, C34, C35  
C36, C37  
100 pF  
4.7 F, 50 V  
TDK C4532X7R1E475MT020U or  
capacitor of same quality.  
[5]  
[5]  
[5]  
[5]  
[5]  
[5]  
[5]  
[5]  
L1  
microstrip  
-
(W L) 15 mm 13 mm  
(W L) 5 mm 26 mm  
(W L) 2 mm 49.5 mm  
(W L) 1.7 mm 3.5 mm  
(W L) 2 mm 9.5 mm  
(W L) 5 mm 13 mm  
(W L) 2 mm 11 mm  
(W L) 2 mm 3 mm  
L2  
microstrip  
-
L3, L32  
L4  
microstrip  
-
microstrip  
-
L5  
microstrip  
-
L30  
microstrip  
-
L31  
microstrip  
-
L33  
microstrip  
-
R1, R2  
R3, R4  
R5, R6  
R7, R8  
wire resistor  
SMD resistor  
wire resistor  
potentiometer  
10   
5.6   
100   
10 k  
0805  
[1] American technical ceramics type 800R or capacitor of same quality.  
[2] American technical ceramics type 800B or capacitor of same quality.  
[3] American technical ceramics type 180R or capacitor of same quality.  
[4] American technical ceramics type 100A or capacitor of same quality.  
[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);  
thickness copper plating = 35 m.  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
8 of 16  
 
 
 
 
 
 
 
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx  
ꢀ9  
*ꢁꢂWHVWꢃ  
5ꢌ  
&ꢁꢇ  
5ꢁ  
&ꢁꢌ  
/ꢈ  
ꢀ9  
5ꢈ  
'ꢁꢂWHVWꢃ  
&ꢅꢋ  
&ꢄꢁ  
&ꢄꢅ  
&ꢁꢁ  
5ꢅ  
&ꢁꢅ  
&ꢁꢊ  
&ꢁꢈ  
&ꢅꢊ  
&ꢅꢈ  
/ꢅꢆ  
&ꢅꢆ  
/ꢅꢄ  
%ꢄ  
/ꢅ  
/ꢁ  
&ꢅ  
/ꢅꢁ  
&ꢅꢄ  
/ꢄ  
&ꢈ  
&ꢊ  
&ꢍ  
&ꢁ  
ꢈꢆꢉȍ  
&ꢅꢅ  
&ꢁꢆ ꢈꢆꢉȍ  
/ꢅꢅ  
/ꢊ  
%ꢁ  
&ꢅꢁ  
&ꢄ  
&ꢋ &ꢌ  
&ꢇ  
&ꢁꢋ  
5ꢊ  
5ꢋ  
&ꢁꢄ  
&ꢅꢌ  
&ꢄꢄ  
&ꢄꢊ  
ꢀ9  
'ꢄꢂWHVWꢃ  
&ꢁꢍ  
5ꢄ  
&ꢄꢆ  
5ꢍ  
ꢀ9  
*ꢄꢂWHVWꢃ  
DDDꢀꢁꢁꢁꢂꢃꢄ  
See Table 9 for a list of components.  
Fig 6. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages  
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
L3  
L32  
L5  
L30  
L1  
L1  
L2  
L4  
L2  
L31  
L31  
50 mm  
L33  
L30  
L5  
L32  
L3  
105 mm  
001aam588  
See Table 9 for a list of components.  
Fig 7. Printed-Circuit Board (PCB) for class-AB common source amplifier  
49.6 mm  
44 mm  
+V  
G1(test)  
+V  
D1(test)  
+
R1  
C17  
R5  
R7  
C19  
C36  
C23  
-
C21  
C11  
R3  
C15  
C10  
C13  
C34  
C35  
C7 C9  
C30  
C31  
C1  
C3  
C5  
C32  
C33  
50 Ω  
50 Ω  
C2  
C4  
C6  
C14  
C8  
C12  
4 mm  
C16  
R4  
C22  
-
C37  
C20  
R2  
R6  
R8  
C24  
C18  
+
+V  
G2(test)  
+V  
D2(test)  
6.3 mm  
24.3 mm  
27 mm  
36.8 mm  
aaa-000343  
See Table 9 for a list of components.  
Fig 8. Component layout for class-AB common source amplifier  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
10 of 16  
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
9. Package outline  
Flanged balanced ceramic package; 2 mounting holes; 4 leads  
SOT539A  
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT  
1
1
1
1
2
1
2
11.81  
11.56  
3.30 2.26  
3.05 2.01  
4.7  
4.2  
31.55 31.52  
30.94 30.96  
9.50 9.53 1.75 17.12 25.53 3.48  
9.30 9.27 1.50 16.10 25.27 2.97  
41.28 10.29  
41.02 10.03  
0.18  
0.10  
35.56  
1.400  
0.25 0.51 0.25  
0.010 0.020 0.010  
mm  
13.72  
0.465  
0.455  
0.130 0.089  
0.120 0.079  
0.185  
0.165  
1.242 1.241  
1.218 1.219  
0.374 0.375 0.069 0.674 1.005 0.137  
0.366 0.365 0.059 0.634 0.995 0.117  
1.625 0.405  
1.615 0.395  
0.007  
0.004  
0.540  
inches  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
10-02-02  
12-05-02  
SOT539A  
Fig 9. Package outline SOT539A  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
11 of 16  
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
Earless flanged balanced ceramic package; 4 leads  
SOT539B  
D
A
F
5
D
1
D
U
H
1
1
c
w
D
2
1
2
E
1
U
E
H
2
L
3
4
b
w
Q
3
e
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
E
E
e
F
H
H
L
Q
U
1
U
2
w
w
3
1
1
1
2
max 4.7 11.81 0.18 31.55 31.52 9.5  
mm nom  
min 4.2 11.56 0.10 30.94 30.96 9.3  
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375  
inches nom  
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365  
9.53  
1.75 17.12 25.53 3.48 2.26 32.39 10.29  
13.72  
0.54  
0.25 0.25  
0.01 0.01  
9.27  
1.50 16.10 25.27 2.97 2.01 32.13 10.03  
0.069 0.674 1.005 0.137 0.089 1.275 0.405  
0.059 0.634 0.995 0.117 0.079 1.265 0.395  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
sot539b_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
12-05-02  
13-05-24  
SOT539B  
Fig 10. Package outline SOT539A  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
12 of 16  
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
10. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
11. Abbreviations  
Table 10. Abbreviations  
Acronym  
CCDF  
DVB-T  
LDMOS  
OFDM  
PAR  
Description  
Complementary Cumulative Distribution Function  
Digital Video Broadcast - Terrestrial  
Laterally Diffused Metal-Oxide Semiconductor  
Orthogonal Frequency Division Multiplexing  
Peak-to-Average Ratio  
SMD  
Surface Mounted Device  
TTF  
Time-To-Failure  
UHF  
Ultra High Frequency  
VSWR  
Voltage Standing-Wave Ratio  
12. Revision history  
Table 11. Revision history  
Document ID  
Release date Data sheet status  
20130712 Product data sheet  
• The package outline Figure 10 is updated.  
20120725 Product data sheet  
Change notice Supersedes  
BLF879P_BLF879PS v.3  
Modifications:  
- BLF879P_BLF879PS v.2  
BLF879P_BLF879PS v.2  
Modifications:  
-
BLF879P v.1  
• The document now describes both the eared and earless version of this product: BLF879P  
and BLF879PS respectively.  
BLF879P v.1  
20110823  
Product data sheet  
-
-
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
13 of 16  
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
13.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
14 of 16  
 
 
 
 
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
13.4 Licenses  
ICs with DVB-T or DVB-T2 functionality  
non-automotive qualified products in automotive equipment or applications.  
Use of this product in any manner that complies with the DVB-T or the  
DVB-T2 standard may require licenses under applicable patents of the  
DVB-T respectively the DVB-T2 patent portfolio, which license is available  
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under  
applicable patents of other parties.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
13.5 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLF879P_BLF879PS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 3 — 12 July 2013  
15 of 16  
 
 
 
BLF879P; BLF879PS  
NXP Semiconductors  
UHF power LDMOS transistor  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 4  
3
4
5
6
6.1  
7
Application information. . . . . . . . . . . . . . . . . . . 5  
Broadband RF figures . . . . . . . . . . . . . . . . . . . 5  
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Impedance information. . . . . . . . . . . . . . . . . . . 6  
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
7.1  
7.1.1  
7.2  
7.3  
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Handling information. . . . . . . . . . . . . . . . . . . . 13  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
13.1  
13.2  
13.3  
13.4  
13.5  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 15  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 12 July 2013  
Document identifier: BLF879P_BLF879PS  
 

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