BTA225B-800C [NXP]

Three quadrant triacs high commutation; 三象限三端双向可控硅整流高


型号：	BTA225B-800C
厂家：	NXP
描述：	Three quadrant triacs high commutation 三象限三端双向可控硅整流高栅极触发装置可控硅三端双向交流开关
文件：	总4页 (文件大小：26K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Preliminary specification

Three quadrant triacs

high commutation

BTA225B series C

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high commutation

triacsin aplastic envelopesuitable for

surface mounting, intended for use in

circuitswherehigh staticanddynamic

dV/dt and high dI/dt can occur. These

devices will commutate the full rated

rms current at the maximum rated

junction temperature, without the aid

of a snubber.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BTA225B- 500C 600C 800C

V_DRM

Repetitive peak off-state

voltages

500

600

800

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

180

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

mb main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

full sine wave;

_mb≤ 91 ˚C

Non-repetitive peak

on-state current

full sine wave;

T_j= 25 ˚C prior to surge

t = 20 ms

t = 16.7 ms

t = 10 ms

190

209

180

100

I²t

I²t for fusing

A²s

A/µs

dI_T/dt

Repetitive rate of rise of I_TM= 30 A; I_G= 0.2 A;

on-state current after

triggering

dI_G/dt = 0.2 A/µs

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

0.5

150

125

˚C

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

October 1997

Rev 1.000

Philips Semiconductors

Preliminary specification

Three quadrant triacs

high commutation

BTA225B series C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance

full cycle

1.0

1.4

K/W

junction to mounting base half cycle

R_{th j-a}

Thermal resistance

junction to ambient

minimum footprint, FR4 board

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_GT

Gate trigger current²

V_D= 12 V; I_T= 0.1 A

T2+ G+

T2+ G-

T2- G-

I_L

Latching current

V_D= 12 V; I_GT= 0.1 A

T2+ G+

T2+ G-

T2- G-

I_H

V_T

V_GT

Holding current

On-state voltage

Gate trigger voltage

V_D= 12 V; I_GT= 0.1 A

I_T= 30 A

1.2

0.7

0.4

0.1

1.55

1.5

V_D= 12 V; I_T= 0.1 A

0.25

V_D= 400 V; I_T= 0.1 A; T_j= 125 ˚C

I_D

Off-state leakage current V_D= V_DRM(max); T_j= 125 ˚C

0.5

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP.

UNIT

dV_D/dt

dI_com/dt

t_gt

Critical rate of rise of

off-state voltage

Critical rate of change of

commutating current

Gate controlled turn-on

time

V_DM= 67% V_DRM(max); T_j= 125 ˚C; exponential

waveform; gate open circuit

1000

V/µs

V_DM= 400 V; T_j= 125 ˚C; I_T(RMS)= 25 A; without

snubber; gate open circuit

A/ms

I_TM= 30 A; V_D= V_DRM(max); I_G= 0.1 A;

dI_G/dt = 5 A/µs

µs

2 Device does not trigger in the T2-, G+ quadrant.

October 1997

Rev 1.000

Philips Semiconductors

Preliminary specification

Three quadrant triacs

high commutation

BTA225B series C

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.1. SOT404 : centre pin connected to mounting base.

Notes

1. Epoxy meets UL94 V0 at 1/8".

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.2. SOT404 : minimum pad sizes for surface mounting.

Notes

1. Plastic meets UL94 V0 at 1/8".

October 1997

Rev 1.000

Philips Semiconductors

Preliminary specification

Three quadrant triacs

high commutation

BTA225B series C

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

October 1997

Rev 1.000

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