BUK462-60A-T [NXP]

TRANSISTOR 15 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power;


型号：	BUK462-60A-T
厂家：	NXP
描述：	TRANSISTOR 15 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 晶体晶体管功率场效应晶体管开关脉冲
文件：	总7页 (文件大小：59K)
中文：	中文翻译
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Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

mGENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope suitable for surface

mount applications.

The device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and AC/DC converters, and

in automotive and general purpose

switching applications.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

175

0.13

˚C

Ω

P_tot

T_j

R_DS(ON)

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

mb drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

Drain-source voltage

Drain-gate voltage

R_GS= 20 kΩ

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction temperature

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

I_D

I_DM

P_tot

T_stg

T_j

- 55

˚C

175

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX.

UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

2.5

K/W

mounting base

Thermal resistance junction to

ambient

minimum footprint,

FR4 board (see fig. 18).

K/W

February 1996

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

STATIC CHARACTERISTICS

T_mb= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_(BR)DSS

Drain-source breakdown

voltage

V_GS= 0 V; I_D= 0.25 mA

V_GS(TO)

Gate threshold voltage

V_DS= V_GS; I_D= 1 mA

2.1

3.0

4.0

1.0

100

0.13

µA

Ω

I_DSS

Zero gate voltage drain current V_DS= 60 V; V_GS= 0 V; T_j= 25 ˚C

Zero gate voltage drain current V_DS= 60 V; V_GS= 0 V; T_j=125 ˚C

Gate source leakage current

Drain-source on-state

resistance

I_DSS

0.1

I_GSS

V_GS= ±30 V; V_DS= 0 V

V_GS= 10 V; I_D= 8.5 A

R_DS(ON)

0.11

DYNAMIC CHARACTERISTICS

T_mb= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

g_fs

Forward transconductance

V_DS= 25 V; I_D= 8.5 A

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

3.5

4.7

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

400

150

500

200

100

t_{d on}

t_r

t_{d off}

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 30 V; I_D= 3 A;

V_GS= 10 V; R_GS= 50 Ω;

R_gen= 50 Ω

L_d

Internal drain inductance

Measured from upper edge of drain

tab to centre of die

Measured from source lead

soldering point to source bond pad

2.5

L_s

Internal source inductance

7.5

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T_mb= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_DR

Continuous reverse drain

current

I_DRM

V_SD

Pulsed reverse drain current

Diode forward voltage

1.7

I_F= 15 A ; V_GS= 0 V

1.4

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_F= 15 A; -dI_F/dt = 100 A/µs;

V_GS= 0 V; V_R= 30 V

0.18

µC

AVALANCHE LIMITING VALUE

T_mb= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

W_DSS

Drain-source non-repetitive

unclamped inductive turn-off

energy

I_D= 15 A ; V_DD≤ 30 V ;

V_GS= 10 V ; R_GS= 50 Ω

February 1996

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

Normalised Power Derating

PD%

120

Zth j-mb / (K/W)

BUKX52

1E+01

1E+00

1E-01

1E-02

110

100

0.5

0.2

0.1

0.05

0.02

D =

Tmb /

100 120 140 160 180

1E-07

1E-05

1E-03

t / s

1E-01

1E+01

Fig.1. Normalised power dissipation.

PD% = 100 P_D/P_{D 25 ˚C}= f(T_mb)

Fig.4. Transient thermal impedance.

Z_{th j-mb}= f(t); parameter D = t_p/T

Normalised Current Derating

ID%

ID / A

BUK452-50A

120

110

100

VGS / V =

100 120 140 160 180

Tmb /

VDS / V

Fig.2. Normalised continuous drain current.

ID% = 100 I_D/I_{D 25 ˚C}= f(T_mb); conditions: V_GS≥ 10 V

Fig.5. Typical output characteristics, T_j= 25 ˚C.

I_D= f(V_DS); parameter V_GS

RDS(ON) / Ohm

BUK452-50A

BUK452-60

ID / A

0.5

0.4

0.3

0.2

0.1

100

VGS / V =

tp = 10 us

RDS(ON) = VDS/ID

100 us

1 ms

10 ms

100 ms

100

ID / A

VDS / V

Fig.3. Safe operating area. T_mb= 25 ˚C

I_D& I_DM= f(V_DS); I_DMsingle pulse; parameter t_p

Fig.6. Typical on-state resistance, T_j= 25 ˚C.

R_DS(ON)= f(I_D); parameter V_GS

February 1996

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

VGS(TO) / V

BUK452-50A

ID / A

max.

150

Tj / C =

typ.

min.

-60

-20

Tj /

100

140

180

10 12 14 16 18 20

VGS / V

Fig.7. Typical transfer characteristics.

I_D= f(V_GS) ; conditions: V_DS= 25 V; parameter T_j

Fig.10. Gate threshold voltage.

V_GS(TO)= f(T_j); conditions: I_D= 1 mA; V_DS= V_GS

SUB-THRESHOLD CONDUCTION

ID / A

gfs / S

BUK452-50A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

2 %

typ

98 %

VGS / V

ID / A

Fig.8. Typical transconductance, T_j= 25 ˚C.

g_fs= f(I_D); conditions: V_DS= 25 V

Fig.11. Sub-threshold drain current.

I_D= f(V_GS); conditions: T_j= 25 ˚C; V_DS= V_GS

C / pF

BUK4y2-50

Normalised RDS(ON) = f(Tj)

2.0

1.5

1.0

0.5

10000

1000

100

Ciss

Coss

Crss

-60

-20

Tj /

100

140

180

VDS / V

Fig.9. Normalised drain-source on-state resistance.

a = R_DS(ON)/R_{DS(ON)25 ˚C}= f(T_j); I_D= 8.5 A; V_GS= 10 V

Fig.12. Typical capacitances, C_iss, C_oss, C_rss.

C = f(V_DS); conditions: V_GS= 0 V; f = 1 MHz

February 1996

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

WDSS%

VGS / V

BUK452-60

VDS / V =12

120

110

100

120

140

160

180

Tmb /

QG / nC

Fig.13. Typical turn-on gate-charge characteristics.

V_GS= f(Q_G); conditions: I_D= 15 A; parameter V_DS

Fig.15. Normalised avalanche energy rating.

W_DSS% = f(T_mb); conditions: I_D= 15 A

IF / A

BUK452-50A

VDD

VDS

VGS

-ID/100

T.U.T.

Tj / C =

150

R 01

RGS

shunt

VSDS / V

Fig.16. Avalanche energy test circuit.

W_DSS= 0.5 LI_D²BV_DSS/(BV_DSS− V_DD

Fig.14. Typical reverse diode current.

I_F= f(V_SDS); conditions: V_GS= 0 V; parameter T_j

)

February 1996

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

4.5 max

1.4 max

10.3 max

11 max

15.4

2.5

0.85 max

(x2)

0.5

2.54 (x2)

Fig.17. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

11.5

9.0

17.5

2.0

3.8

5.08

Fig.18. SOT404 : soldering pattern for surface mounting.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

February 1996

Rev 1.000

Philips Semiconductors

Product specification

PowerMOS transistor

BUK462-60A

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

February 1996

Rev 1.000

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