BYG60MT/R 概述
1.5A, 1000V, SILICON, RECTIFIER DIODE 整流二极管
BYG60MT/R 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | R-PDSO-J2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.92 | 应用: | FAST SOFT RECOVERY MEDIUM POWER |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PDSO-J2 |
JESD-609代码: | e0 | 最大非重复峰值正向电流: | 25 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 2 | 最大输出电流: | 1.5 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 1000 V | 最大反向恢复时间: | 0.25 µs |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn80Pb20) | 端子形式: | J BEND |
端子位置: | DUAL | Base Number Matches: | 1 |
BYG60MT/R 数据手册
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DATA SHEET
k, halfpage
BYG60 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
2000 Jul 03
Supersedes data of 1996 June 05
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
FEATURES
DESCRIPTION
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
• Glass passivated
DO-214AC surface mountable
package with glass passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• Guaranteed avalanche energy
absorption capability
k
a
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
MSA474
Top view
Side view
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG60D
−
−
−
−
−
200
V
V
V
V
V
BYG60G
400
600
800
1000
BYG60J
BYG60K
BYG60M
VR
continuous reverse voltage
BYG60D
−
−
−
−
−
−
200
400
600
800
1000
1.9
V
V
V
V
V
A
BYG60G
BYG60J
BYG60K
BYG60M
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 100 °C; see Fig.2
averaged over any 20 ms period;
Al2O3 printed-circuit board mounting
(see Fig.7); Tamb = 60 °C; see Fig.3
−
−
−
0.9
0.65
25
A
A
A
averaged over any 20 ms period;
epoxy printed-circuit board mounting
(see Fig.7); Tamb = 60 °C; see Fig.3
IFSM
non-repetitive peak forward current t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
2000 Jul 03
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
BYG60D to J
−
−
10
mJ
BYG60K and M
7
mJ
°C
°C
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
see Fig.4
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
−
−
−
−
0.98
1.2
V
V
V(BR)R
reverse avalanche
breakdown voltage
BYG60D
BYG60G
300
500
700
900
1100
−
−
−
−
−
−
−
−
−
−
−
−
5
V
V
BYG60J
V
BYG60K
V
BYG60M
V
IR
reverse current
VR = VRRMmax
see Fig.6
;
µA
VR = VRRMmax; Tj = 165 °C;
−
−
100
µA
see Fig.6
trr
reverse recovery time
BYG60D to J
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
−
−
−
−
250
300
ns
ns
BYG60K and M
diode capacitance
BYG60D to J
Cd
VR = 0 V; f = 1 MHz
−
−
30
25
−
−
pF
pF
BYG60K and M
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
K/W
K/W
K/W
note 1
note 2
100
150
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the ‘General Part of associated Handbook’.
2000 Jul 03
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
GRAPHICAL DATA
MGD481
MGD482
4
1.6
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
3
1.2
2
1
0.8
0.4
0
0
0
0
100
200
100
200
T
(°C)
T
(°C)
amb
tp
VR = VRRMmax; δ = 0.5; a = 1.57.
Device mounted as shown in Fig.7.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.
VR = VRRMmax; δ = 0.5; a = 1.57.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGD484
MGD483
10
200
handbook, halfpage
handbook, halfpage
I
F
T
j
(A)
(°C)
8
160
6
4
2
0
120
80
D
G
J
K
M
40
0
0
1
2
3
0
400
800
1200
V
(V)
F
V
(V)
R
Device mounted as shown in Fig.7.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Fig.4 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.5 Forward current as a function of forward
voltage; maximum values.
2000 Jul 03
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
MGC532
3
10
handbook, halfpage
50
I
R
(µA)
2
10
4.5
50
10
2.5
1
0
1.25
MSB213
100
200
o
T ( C)
j
VR = VRMMmax
.
Dimensions in mm.
Material: AL2O3 or epoxy-glass.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Printed-circuit board for surface mounting.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
5
2000 Jul 03
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
PACKAGE OUTLINE
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors
SOD106
H
D
A
A
1
c
Q
E
b
(1)
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
H
Q
1
1.6
1.4
2.3
2.0
4.5
4.3
2.8
2.4
5.5
5.1
3.3
2.7
mm
0.05
0.2
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD106
DO-214AC
97-06-09
2000 Jul 03
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Jul 03
7
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Internet: http://www.semiconductors.philips.com
70
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2000 Jul 03
Document order number: 9397 750 07185
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