BYV40-150 [PHILIPS]
Rectifier Diode, 1.3A, 150V V(RRM),;
| 型号： | BYV40-150 |
| 厂家： | 
PHILIPS SEMICONDUCTORS |
| 描述： | Rectifier Diode, 1.3A, 150V V(RRM), 非常快速的恢复二极管 快速恢复二极管 光电二极管 |
| 文件： | 总6页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV40 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency dual
rectifier diodes in a plastic envelope
suitable for surface mounting,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
BYV40-
100
100
150
150
200
200
VRRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
V
VF
IO(AV)
0.7
1.5
0.7
1.5
0.7
1.5
V
A
trr
25
25
25
ns
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
anode 1 (a)
4
a1
1
a2
3
2
cathode (k)
anode 2 (a)
cathode (k)
3
k
2
4
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
100
100
100
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Repetitive peak reverse voltage
-
-
-
V
V
V
Crest working reverse voltage
Continuous reverse voltage1
IO(AV)
Output current (both diodes
conducting)2
square wave; δ = 0.5;
-
-
1.5
A
A
T
sp ≤ 132˚C
sinusoidal; a = 1.57;
sp ≤ 134˚C
1.35
T
IO(RMS)
IFRM
RMS forward current
-
-
2.1
1.5
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Tsp ≤ 132 ˚C
IFSM
Non-repetitive peak forward
current per diode
tp = 10 ms
-
-
6
6.6
A
A
tp = 8.3 ms
sinusoidal; Tj = 150˚C prior
to surge; with reapplied
VRWM(max)
I2t
Tstg
Tj
I2t for fusing
Storage temperature
Operating junction temperature
t = 10 ms
-
-65
-
0.18
150
150
A2s
˚C
˚C
1 Tsp ≤ 120˚C for thermal stability.
2 Neglecting switching and reverse current losses
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV40 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-sp
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
one or both diodes conducting
-
-
15
K/W
Rth j-a
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:9
-
-
156
70
-
-
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage (per diode)
IF = 0.5 A; Tj = 150˚C
IF = 1.5 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
-
-
-
-
0.50
0.82
100
5
0.7
1.0
300
10
V
V
µA
µA
IR
Reverse current (per diode)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Qs
Reverse recovery charge (per
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
-
-
-
11
25
-
nC
ns
V
diode)
trr
Reverse recovery time (per
diode)
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
-
Vfr
Forward recovery voltage (per IF = 2 A; dIF/dt = 20 A/µs
3
diode)
I
dI
dt
F
I
F
F
t
rr
time
time
V
F
Q
100%
10%
s
V
fr
I
I
V
R
F
rrm
time
Fig.1. Definition of trr, Qs and Irrm
Fig.2. Definition of Vfr
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV40 series
Tsp(max) / C
PF / W
1
IF / A
135
138
141
3
2
1
0
Vo = 0.66 V
Rs = 0.08 Ohms
Tj=25C
D = 1.0
0.8
Tj=150C
0.5
0.6
TYP
0.2
0.4
144
147
150
0.1
MAX
t
p
t
p
I
D =
1.2
T
0.2
0
t
T
0
0.2
0.4
0.6
0.8
1
1.4
1.5
0
0.5
1.0
IF(AV) / A
VF / V
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
Fig.6. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
IF(AV) =IF(RMS) x √D.
Tsp(max) / C
a = 1.57
Qs / nC
100
PF / W
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
139.5
Vo = 0.66 V
Rs = 0.08 Ohms
141
142.5
144
1.9
2.2
IF=2A
IF=1A
2.8
10
145.5
147
4
148.5
150
1
0
0.1
0.2
0.3
0.4
IF(AV) / A
0.5
0.6
0.7
0.8
1
10
dIF/dt(A/us)
100
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
Fig.7. Maximum Qs at Tj = 25 ˚C; per diode
factor = IF(RMS) / IF(AV)
.
trr / ns
Zth j-sp / (K/W)
100
1000
100
10
1.0
IF = 2A
1A
t
P
D
p
10
1
0.1
t
0.01
10us
1ms
0.1s
10s
1000s
1
10
100
dIF/dt (A/us)
tp / s
Fig.5. Maximum trr at Tj = 25 ˚C; per diode
Fig.8. Transient thermal impedance; per diode;
Zth j-sp = f(tp).
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV40 series
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
4.5
4.6
9
10
7
15
50
Fig.9. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV40 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
6.7
6.3
B
3.1
2.9
0.32
0.24
0.2
M
A
A
4
0.10
0.02
7.3
6.7
3.7
3.3
16
max
13
2
3
1
10
max
1.05
0.85
0.80
0.60
2.3
1.8
max
M
0.1
(4x)
B
4.6
Fig.10. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV40 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.200
相关型号：
©2020 ICPDF网 联系我们和版权申明