BZX399-C22 [PHILIPS]

Zener Diode, 22V V(Z), 5%, 0.3W,;
BZX399-C22
型号: BZX399-C22
厂家: PHILIPS SEMICONDUCTORS    PHILIPS SEMICONDUCTORS
描述:

Zener Diode, 22V V(Z), 5%, 0.3W,

测试 光电二极管
文件: 总12页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BZX399 series  
Voltage regulator diodes  
1999 Jun 04  
Product specification  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
FEATURES  
PINNING  
PIN  
Total power dissipation: max. 300 mW  
Tolerance: ±5%  
DESCRIPTION  
1
2
cathode  
anode  
Working voltage range: nom. 1.8 to 43 V (E24 range)  
Improved IZ/VZ characteristic at low currents  
(IZ = 50 µA). This results in a noise free and sharp  
breakdown knee.  
APPLICATIONS  
handbook, halfpage  
1
2
General regulation functions, where low noise at low  
currents is required  
Low power consumption applications  
Top view  
MAM387  
(e.g. hand-held applications).  
DESCRIPTION  
Fig.1 Simplified outline (SOD323) and symbol.  
Low-power low noise voltage regulator diodes in SOD323  
plastic SMD package.  
The diodes are available in the normalized E24 ±5%  
tolerance range. The series consists of 34 types with  
nominal working voltages from 1.8 to 43 V.  
MARKING  
MARKING  
CODE  
MARKING  
CODE  
MARKING  
CODE  
MARKING  
CODE  
TYPE NUMBER  
TYPE NUMBER  
TYPE NUMBER  
TYPE NUMBER  
BZX399-C1V8  
BZX399-C2V0  
BZX399-C2V2  
BZX399-C2V4  
BZX399-C2V7  
BZX399-C3V0  
BZX399-C3V3  
BZX399-C3V6  
BZX399-C3V9  
B1  
B2  
B3  
B4  
B5  
B6  
B7  
B8  
B9  
BZX399-C4V3  
BZX399-C4V7  
BZX399-C5V1  
BZX399-C5V6  
BZX399-C6V2  
BZX399-C6V8  
BZX399-C7V5  
BZX399-C8V2  
BZX399-C9V1  
B0  
BA  
BB  
BC  
BD  
BE  
BF  
BG  
BH  
BZX399-C10  
BZX399-C11  
BZX399-C12  
BZX399-C13  
BZX399-C15  
BZX399-C16  
BZX399-C18  
BZX399-C20  
BZX399-C22  
BJ  
BK  
BL  
BZX399-C24  
BZX399-C27  
BZX399-C30  
BZX399-C33  
BZX399-C36  
BZX399-C39  
BZX399-C43  
BT  
BU  
BV  
BM  
BN  
BP  
BQ  
BR  
BS  
BW  
BX  
BY  
BZ  
1999 Jun 04  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
250  
see Tables 1 and 2  
UNIT  
mA  
IF  
continuous forward current  
IZSM  
non-repetitive peak reverse current  
tp = 100 µs; square wave;  
Tamb = 25 °C prior to surge  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
300  
mW  
°C  
65  
+150  
150  
°C  
Note  
1. Device mounted on a FR4 printed circuit-board.  
ELECTRICAL CHARACTERISTICS  
Total BZX399-C series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
VF  
IF = 10 mA; see Fig.5  
IF = 100 mA; see Fig.5  
0.9  
1.0  
V
V
IR  
reverse current  
BZX399-C1V8  
BZX399-C2V0  
BZX399-C2V2  
BZX399-C2V4  
BZX399-C2V7  
BZX399-C3V0  
BZX399-C3V3  
BZX399-C3V6  
BZX399-C3V9  
BZX399-C4V3  
BZX399-C4V7  
BZX399-C5V1  
BZX399-C5V6  
BZX399-C6V2  
BZX399-C6V8  
BZX399-C7V5  
BZX399-C8V2  
BZX399-C9V1  
BZX399-C10  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 2 V  
VR = 3 V  
VR = 3 V  
VR = 4 V  
VR = 5 V  
VR = 5 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 7 V  
VR = 8 V  
VR = 9 V  
VR = 10 V  
VR = 0.7VZnom  
2
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
1
0.5  
0.2  
0.05  
0.02  
2
1
0.5  
0.1  
2
1
1
0.1  
0.01  
0.1  
0.2  
0.1  
0.1  
0.05  
0.05  
0.05  
0.01  
BZX399-C11  
BZX399-C12  
BZX399-C13  
BZX399-C15 to 43  
1999 Jun 04  
3
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
Table 1 Per type BZX399-C1V8 to C15  
Tj = 25 °C unless otherwise specified.  
WORKING  
VOLTAGE  
VZ (V)  
VOLTAGE  
CHANGE  
VZ(V)  
TEMP. COEFF.  
SZ (mV/K)  
IZ = 50 µA  
(see Figs 2, 3 and 4)  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
I
ZSM (A) at tp = 100 µs;  
Tamb = 25 °C  
BZX399-C  
XXX  
IZ = 50 µA  
(note 1)  
Tol. ±5%  
MIN.  
MAX.  
MAX.  
TYP.  
MAX.  
MAX.  
1V8  
2V0  
2V2  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
9V1  
10  
1.71  
1.90  
2.09  
2.28  
2.57  
2.85  
3.14  
3.42  
3.71  
4.09  
4.47  
4.85  
5.32  
5.89  
6.46  
7.13  
7.79  
8.65  
9.50  
10.45  
11.40  
12.35  
14.25  
1.89  
2.10  
2.31  
2.52  
2.84  
3.15  
3.47  
3.78  
4.10  
4.52  
4.94  
5.36  
5.88  
6.51  
7.14  
7.88  
8.61  
9.56  
10.50  
11.55  
12.60  
13.65  
15.75  
0.65  
0.70  
0.75  
0.80  
0.85  
0.90  
0.93  
0.95  
0.97  
0.99  
0.97  
0.60  
0.20  
0.10  
0.10  
0.15  
0.15  
0.10  
0.10  
0.11  
0.12  
0.13  
0.15  
0.85  
0.95  
1.05  
1.15  
1.35  
1.50  
1.65  
1.80  
1.95  
2.05  
1.90  
0.15  
425  
410  
390  
370  
350  
325  
310  
300  
290  
280  
275  
300  
275  
250  
215  
170  
150  
120  
110  
110  
105  
105  
100  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
5.0  
4.0  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
1.75  
2.35  
3.00  
3.60  
4.25  
5.00  
5.80  
11  
6.70  
12  
7.65  
13  
8.60  
15  
10.50  
Note  
1. VZ = VZ at 100 µA minus VZ at 10 µA.  
1999 Jun 04  
4
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
Table 2 Per type BZX399-C16 to C43  
Tj = 25 °C unless otherwise specified.  
WORKING  
VOLTAGE  
VZ (V)  
VOLTAGE  
CHANGE  
VZ(V)  
TEMP. COEFF.  
SZ (mV/K)  
IZ = 50 µA  
(see Fig.4)  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0 V  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
I
ZSM (A) at tp = 100 µs;  
Tamb = 25 °C  
BZX399- C  
XXX  
IZ = 50 µA  
(note 1)  
Tol. ±5%  
MIN.  
MAX.  
MAX.  
TYP.  
MAX.  
MAX.  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
15.20  
17.10  
19.00  
20.90  
22.80  
25.65  
28.50  
31.35  
34.20  
37.05  
40.85  
16.80  
18.90  
21.00  
23.10  
25.20  
28.35  
31.50  
34.65  
37.80  
40.95  
45.15  
0.16  
0.18  
0.20  
0.22  
0.24  
0.27  
0.30  
0.30  
0.30  
0.30  
0.30  
11.4  
13.3  
15.3  
17.2  
19.2  
22.0  
25.2  
28.5  
32.0  
35.1  
39.4  
95  
95  
90  
85  
80  
75  
65  
60  
60  
60  
55  
1.5  
1.5  
1.5  
1.25  
1.25  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
Note  
1. VZ = VZ at 100 µA minus VZ at 10 µA.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient  
thermal resistance from junction to soldering point note 2  
CONDITIONS  
VALUE  
UNIT  
K/W  
K/W  
Rth j-a  
Rth j-s  
note 1  
415  
110  
Notes  
1. Device mounted on a FR4 printed circuit-board.  
2. Soldering point of the cathode tab.  
1999 Jun 04  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
GRAPHICAL DATA  
MDA989  
0
C4V7  
S
Z
(mV/K)  
0.8  
C1V8  
C4V3  
C3V9  
C2V0  
C2V4  
1.6  
C3V0  
C3V6  
C3V3  
2.4  
3
2
10  
10  
10  
I
(µA)  
Z
Tj = 25 to 150 °C.  
Fig.2 Temperature coefficient as a function of working current; typical values.  
MDA990  
MDA991  
6
50  
handbook, halfpage  
handbook, halfpage  
S
Z
S
Z
(mV/K)  
(mV/K)  
C43  
C36  
C8V2  
40  
30  
20  
4
C6V8  
C6V2  
C5V6  
C30  
2
0
C27  
C24  
C5V1  
C18  
C15  
10  
0
C12  
C10  
2  
10  
2
3
2
3
10  
10  
10  
10  
10  
I
(µA)  
I
(µA)  
Z
Z
Tj = 25 to 150 °C.  
Tj = 25 to 150 °C.  
Fig.3 Temperature coefficient as a function of  
working current; typical values.  
Fig.4 Temperature coefficient as a function of  
working current; typical values.  
1999 Jun 04  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
MBG781  
300  
handbook, halfpage  
I
F
(mA)  
200  
100  
0
0.6  
0.8  
1.0  
V
(V)  
F
Tj = 25 °C.  
Fig.5 Forward current as a function of forward  
voltage; typical values.  
1999 Jun 04  
7
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
PACKAGE OUTLINE  
SOD323  
Plastic surface mounted package; 2 leads  
Q
A
A
1
c
L
p
v
M
A
H
E
A
D
1
2
b
E
p
(1)  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max.  
UNIT  
A
b
c
D
E
H
L
p
Q
v
p
E
+ 0.05 0.40  
0.05 0.25  
0.25  
0.10  
1.1  
0.8  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45  
0.15  
0.25  
0.15  
mm  
0.2  
Note  
1. The marking bar indicates the cathode.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOD323  
98-09-14  
1999 Jun 04  
8
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Jun 04  
9
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
NOTES  
1999 Jun 04  
10  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZX399 series  
NOTES  
1999 Jun 04  
11  
Philips Semiconductors – a worldwide company  
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For all other countries apply to: Philips Semiconductors,  
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© Philips Electronics N.V. 1999  
SCA65  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/01/pp12  
Date of release: 1999 Jun 04  
Document order number: 9397 750 06054  

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SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9136_11

Multi-Output Power-Supply Controller

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VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY