N74F40N [NXP]

Dual 4-input NAND buffer; 双4输入与非缓冲器
N74F40N
型号: N74F40N
厂家: NXP    NXP
描述:

Dual 4-input NAND buffer
双4输入与非缓冲器

栅极 逻辑集成电路 光电二极管
文件: 总3页 (文件大小:36K)
中文:  中文翻译
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Philips Semiconductors FAST Products  
Product specification  
Dual 4-input NAND buffer  
74F40  
PIN CONFIGURATION  
TYPE  
TYPICAL  
PROPAGATION  
DELAY  
TYPICAL  
SUPPLY CURRENT  
(TOTAL)  
D0a  
D0b  
NC  
1
2
3
4
5
14  
V
CC  
74F40  
3.5ns  
6mA  
13 D1d  
12 D1c  
11 NC  
10 D1b  
ORDERING INFORMATION  
D0c  
D0d  
COMMERCIAL RANGE  
DESCRIPTION  
V
CC  
= 5V ±10%, T  
= 0°C to +70°C  
amb  
Q0  
6
7
9
8
D1a  
Q1  
14-pin plastic DIP  
14-pin plastic SO  
N74F40N  
N74F40D  
GND  
SF00065  
INPUT AND OUTPUT LOADING AND FAN OUT TABLE  
PINS  
Dna, Dnb, Dnc, Dnd  
Q0, Q1  
DESCRIPTION  
74F (U.L.) HIGH/LOW  
1.0/2.0  
LOAD VALUE HIGH/LOW  
20µA/1.2mA  
Data inputs  
Data outputs  
750/106.7  
15mA/64mA  
NOTE: One (1.0) FAST unit load is defined as: 20µA in the High state and 0.6mA in the Low state.  
LOGIC DIAGRAM  
FUNCTION TABLE  
INPUTS  
Dnb  
OUTPUT  
1
2
D0a  
Dna  
L
Dnc  
X
Dnd  
X
Qn  
H
D0b  
D0c  
D0d  
X
L
6
Q0  
4
5
X
X
X
H
X
X
X
H
L
X
H
X
X
X
H
9
D1a  
D1b  
H
H
H
L
10  
NOTES:  
8
Q1  
1. H = High voltage level  
2. L = Low voltage level  
3. X = Don’t care  
12  
13  
D1c  
D1d  
V
= Pin 14  
CC  
GND = Pin 7  
NC = Pin 3, 11  
SF00081  
LOGIC SYMBOL  
IEC/IEEE SYMBOL  
1
&
1
2
4
5
9
10 12 13  
2
4
6
5
D0a D0b D0c D0d D1a D1b D1c D1d  
9
Q0 Q1  
10  
12  
8
6
8
13  
V
= Pin 14  
CC  
GND = Pin 7  
NC = Pin 3, 11  
SF00083  
SF00082  
1
April 11, 1989  
853–0053 96314  
Philips Semiconductors FAST Products  
Product specification  
Dual 4-input NAND buffer  
74F40  
ABSOLUTE MAXIMUM RATINGS  
(Operation beyond the limits set forth in this table may impair the useful life of the device.  
Unless otherwise noted these limits are over the operating free-air temperature range.)  
SYMBOL  
PARAMETER  
RATING  
–0.5 to +7.0  
–0.5 to +7.0  
–30 to +5  
UNIT  
V
V
Supply voltage  
Input voltage  
Input current  
CC  
IN  
V
V
I
mA  
V
IN  
V
Voltage applied to output in High output state  
Current applied to output in Low output state  
Operating free-air temperature range  
Storage temperature range  
–0.5 to V  
128  
OUT  
OUT  
CC  
I
mA  
°C  
°C  
T
amb  
0 to +70  
T
stg  
–65 to +150  
RECOMMENDED OPERATING CONDITIONS  
LIMITS  
SYMBOL  
PARAMETER  
UNIT  
MIN  
4.5  
NOM  
MAX  
V
Supply voltage  
5.0  
5.5  
V
V
CC  
IH  
IL  
V
V
High-level input voltage  
Low-level input voltage  
Input clamp current  
2.0  
0.8  
–18  
–15  
64  
V
I
I
I
mA  
mA  
mA  
°C  
IK  
High-level output current  
Low-level output current  
OH  
OL  
T
amb  
Operating free-air temperature range  
0
+70  
DC ELECTRICAL CHARACTERISTICS  
(Over recommended operating free-air temperature range unless otherwise noted.)  
LIMITS  
1
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
V
2
MIN  
TYP  
MAX  
±10%V  
2.5  
2.7  
2.0  
2.0  
CC  
I
= –1mA  
OH  
V
V
V
= MIN,  
= MAX,  
= MIN  
CC  
IL  
±5%V  
3.4  
CC  
V
OH  
High-level output voltage  
±10%V  
CC  
CC  
IH  
I
= –15mA  
V
OH  
±5%V  
V
V
V
= MIN,  
= MAX,  
= MIN  
±10%V  
0.55  
0.55  
CC  
IL  
CC  
V
OL  
Low-level output voltage  
I
OL  
= MAX  
V
±5%V  
0.42  
CC  
IH  
V
Input clamp voltage  
V
V
= MIN, I = I  
–0.73  
–1.2  
100  
V
IK  
CC  
I
IK  
I
I
I
I
Input current at maximum input voltage  
= MAX, V = 7.0V  
µA  
I
CC  
I
High-level input current  
Low-level input current  
V
CC  
V
CC  
V
CC  
= MAX, V = 2.7V  
20  
–0.6  
–225  
4.0  
µA  
mA  
mA  
IH  
IL  
I
= MAX, V = 0.5V  
I
3
Short-circuit output current  
= MAX  
–100  
OS  
I
V
= GND  
= 4.5V  
IN  
1.75  
11  
CCH  
IN  
I
Supply current (total)  
V
CC  
= MAX  
mA  
CC  
I
V
17  
CCL  
NOTES:  
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.  
2. All typical values are at V = 5V, T = 25°C.  
CC  
amb  
3. Not more than one output should be shorted at a time. For testing I , the use of high-speed test apparatus and/or sample-and-hold  
OS  
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting  
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any  
sequence of parameter tests, I tests should be performed last.  
OS  
2
April 11, 1989  
Philips Semiconductors FAST Products  
Product specification  
Dual 4-input NAND buffer  
74F40  
AC ELECTRICAL CHARACTERISTICS  
LIMITS  
V
= +5.0V  
= +25°C  
V
= +5.0V ± 10%  
= 0°C to +70°C  
CC  
CC  
TEST  
CONDITION  
SYMBOL  
PARAMETER  
T
amb  
T
amb  
UNIT  
C = 50pF, R = 500Ω  
C = 50pF, R = 500Ω  
L L  
L
L
MIN  
TYP  
MAX  
MIN  
MAX  
t
t
Propagation delay  
Dna, Dnb, Dnc, Dnd to Qn  
2.0  
1.5  
4.0  
3.0  
6.0  
5.0  
1.5  
1.0  
7.0  
5.5  
PLH  
PHL  
Waveform 1  
ns  
AC WAVEFORMS  
Dna, Dnb, Dnc, Dnd  
V
V
M
M
t
t
PHL  
PLH  
V
V
M
M
Qn  
SF00069  
Waveform 1. Propagation Delay for Inverting Outputs  
NOTE:  
For all waveforms, V = 1.5V.  
M
TEST CIRCUIT AND WAVEFORMS  
t
w
AMP (V)  
V
CC  
90%  
90%  
NEGATIVE  
PULSE  
V
V
M
M
10%  
10%  
V
V
OUT  
IN  
0V  
PULSE  
GENERATOR  
D.U.T.  
t
t )  
t
t )  
THL ( f  
TLH ( r  
R
C
R
L
t
t )  
T
L
t
t )  
TLH ( r  
THL ( f  
AMP (V)  
0V  
90%  
M
90%  
POSITIVE  
PULSE  
V
V
M
10%  
10%  
Test Circuit for Totem-Pole Outputs  
DEFINITIONS:  
t
w
R
L
C
L
R
T
=
=
=
Load resistor;  
see AC electrical characteristics for value.  
Load capacitance includes jig and probe capacitance;  
see AC electrical characteristics for value.  
Termination resistance should be equal to Z  
pulse generators.  
Input Pulse Definition  
INPUT PULSE REQUIREMENTS  
family  
74F  
V
M
rep. rate  
t
t
t
THL  
amplitude  
w
TLH  
of  
OUT  
2.5ns 2.5ns  
3.0V  
1.5V  
1MHz  
500ns  
SF00006  
3
April 11, 1989  

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