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NE650NSIIA [PHILIPS]

Dolby Noise Reduction IC, PDIP16;

NE650NSIIA


元器件型号：	NE650NSIIA
生产厂家：	PHILIPS SEMICONDUCTORS
描述和应用：	Dolby Noise Reduction IC, PDIP16 光电二极管商用集成电路
PDF文件：	总5页 (文件大小：211K)
下载文档：	下载PDF数据表文档文件
型号参数：NE650NSIIA参数

NE650R279A

0.2 W L, S-BAND POWER GaAs MES FET

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36 NEC

NE650R279A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R279A-A

暂无描述

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0 NEC

NE650R279A-T1

0.2 W L, S-BAND POWER GaAs MES FET

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23 NEC

NE650R279A-T1-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R479A

0.4 W L, S-BAND POWER GaAs MES FET

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23 NEC

NE650R479A-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R479A-T1

0.4 W L, S-BAND POWER GaAs MES FET

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24 NEC

NE650R479A-T1-A

暂无描述

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0 NEC

NE6510179

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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96 CEL

NE6510179A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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130 CEL

NE6510179A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET

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0 NEC

NE6510179A-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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60 CEL

NE6510179A-T1

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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46 CEL

NE6510179A-T1-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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50 CEL

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