NUP1301U,115 [NXP]

NUP1301U - Ultra low capacitance ESD protection array SC-70 3-Pin;
NUP1301U,115
型号: NUP1301U,115
厂家: NXP    NXP
描述:

NUP1301U - Ultra low capacitance ESD protection array SC-70 3-Pin

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NUP1301U  
T323  
SO  
Ultra low capacitance ESD protection array  
Rev. 1 — 28 January 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small  
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed to  
protect one signal line in rail-to-rail configuration from the damage caused by  
ESD and other transients.  
1.2 Features and benefits  
ESD protection of one signal line (rail-to-rail configuration)  
Ultra low diode capacitance: Cd = 0.6 pF  
ESD protection up to 30 kV  
IEC 61000-4-2; level 4 (ESD)  
IEC 61000-4-5 (surge); IPP = 11 A  
AEC-Q101 qualified  
1.3 Applications  
Telecommunication networks  
Video line protection  
Microcontroller protection  
I2C-bus protection  
Antenna power supply  
Analog audio  
Class-D amplifier  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified.  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
repetitive peak reverse  
voltage  
-
-
-
-
80  
V
Cd  
IR  
diode capacitance  
f = 1 MHz;  
VR = 0 V  
0.6  
-
0.75  
100  
pF  
nA  
reverse current  
VR = 80 V  
 
 
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
2. Pinning information  
Table 2.  
Pinning  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
GND  
VCC  
I/O  
ground  
3
3
2
supply voltage  
input/output  
3
1
2
1
2
006aaa763  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
NUP1301U  
plastic surface-mounted package; 3 leads  
SOT323  
4. Marking  
Table 4.  
Marking  
Type number  
NUP1301U  
Marking code[1]  
*VU  
[1] * = placeholder for manufacturing site code  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Max  
Unit  
repetitive peak  
reverse voltage  
-
80  
V
VR  
IF  
reverse voltage  
forward current  
-
-
-
80  
V
[1]  
[2]  
215  
500  
mA  
mA  
IFRM  
repetitive peak  
forward current  
tp 1 ms;   0.25  
IFSM  
non-repetitive peak  
forward current  
square wave  
tp = 1 s  
-
-
-
4
A
A
A
tp = 1 ms  
tp = 1 s  
1
0.5  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
2 of 14  
 
 
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
Table 5.  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per device  
PPP  
Parameter  
Conditions  
Min  
Max  
Unit  
[3][4]  
[3][4]  
[5][6]  
peak pulse power  
tp = 8/20 s  
tp = 8/20 s  
Tamb 25 C  
-
220  
11  
W
IPP  
peak pulse current  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
-
A
Ptot  
-
200  
150  
+150  
+150  
mW  
C  
C  
C  
Tj  
-
Tamb  
Tstg  
55  
65  
[1] Pulse test: tp 300 s;   0.02.  
[2] Tj = 25 C prior to surge.  
[3] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.  
[4] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).  
[5] Single diode loaded.  
[6] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
Table 6.  
Symbol Parameter  
VESD electrostatic discharge  
voltage  
ESD maximum ratings  
Conditions  
Min  
Max  
Unit  
[1][2]  
IEC 61000-4-2  
(contact discharge)  
-
30  
kV  
machine model  
-
-
400  
10  
V
MIL-STD-883  
kV  
(human body model)  
[1] Device stressed with ten non-repetitive ESD pulses.  
[2] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).  
Table 7.  
ESD standards compliance  
Standard  
Conditions  
IEC 61000-4-2; level 4 (ESD)  
> 15 kV (air); > 8 kV (contact)  
> 8 kV  
MIL-STD-883; class 3B (human body model)  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
3 of 14  
 
 
 
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
001aaa631  
I
PP  
100 %  
90 %  
001aaa630  
120  
100 % I ; 8 μs  
PP  
I
PP  
(%)  
80  
t  
e
50 % I ; 20 μs  
PP  
40  
10 %  
t
t = 0.7 ns to 1 ns  
r
0
30 ns  
60 ns  
0
10  
20  
30  
40  
t (μs)  
Fig 1. 8/20 s pulse waveform according to  
Fig 2. ESD pulse waveform according to  
IEC 61000-4-2  
IEC 61000-4-5  
6. Thermal characteristics  
Table 8.  
Thermal characteristics  
Symbol Parameter  
Per device  
Conditions  
Min  
Typ  
Max  
Unit  
[1][2]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
625  
300  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Single diode loaded.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
4 of 14  
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
7. Characteristics  
Table 9.  
Electrical characteristics  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max Unit  
VBR  
VF  
breakdown voltage  
IR = 100 A  
100  
-
-
V
[1]  
forward voltage  
reverse current  
IF = 1 mA  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715  
855  
1
mV  
mV  
V
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
VR = 25 V  
VR = 80 V  
1.25  
30  
V
IR  
nA  
nA  
A  
100  
25  
VR = 25 V;  
Tj = 150 C  
VR = 80 V;  
Tj = 150 C  
-
-
-
35  
A  
Cd  
diode capacitance  
clamping voltage  
f = 1 MHz; VR = 0 V  
0.6  
0.75 pF  
Per device  
[2][3]  
[2][3]  
VCL  
IPP = 1 A  
-
-
-
-
3
V
V
IPP = 11 A  
20  
[1] Pulse test: tp 300 s;   0.02.  
[2] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.  
[3] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
5 of 14  
 
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
mbg704  
006aab132  
2
3
10  
10  
I
F
I
FSM  
(A)  
(mA)  
2
10  
10  
10  
1
(1) (2) (3) (4)  
1
1  
1  
10  
10  
2
3
4
1
10  
10  
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
1.4  
(V)  
t
(μs)  
p
F
(1) Tamb = 150 C  
(2) Tamb = 85 C  
(3) Tamb = 25 C  
Based on square wave currents.  
Tj = 25 C; prior to surge  
(4)  
Tamb = 40 C  
Fig 3. Forward current as a function of forward  
voltage; typical values  
Fig 4. Non-repetitive peak forward current as a  
function of pulse duration; typical values  
mbg446  
006aab133  
2
10  
0.8  
I
R
(1)  
(2)  
C
(pF  
d
(μA)  
10  
)
0.6  
1
1  
10  
10  
10  
10  
10  
0.4  
(3)  
(4)  
2  
3  
4  
5  
0.2  
0
0
4
8
12  
16  
0
20  
40  
60  
80  
100  
V
R
(V)  
V
(V)  
R
(1) Tamb = 150 C  
(2) Tamb = 85 C  
(3) Tamb = 25 C  
Tamb = 25 C; f = 1 MHz  
(4)  
Tamb = 40 C  
Fig 5. Reverse current as a function of reverse  
voltage; typical values  
Fig 6. Diode capacitance as a function of reverse  
voltage; typical values  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
6 of 14  
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
ESD TESTER  
4 GHz DIGITAL  
acc. to IEC 61000-4-2  
OSCILLOSCOPE  
C
= 150 pF; R = 330 Ω  
Z
Z
RG 223/U  
50 Ω coax  
R
Z
450 Ω  
10×  
ATTENUATOR  
C
Z
50 Ω  
DUT  
(DEVICE  
UNDER  
TEST)  
vertical scale = 10 V/div  
vertical scale = 10 A/div  
horizontal scale = 15 ns/div  
horizontal scale = 15 ns/div  
GND  
GND  
clamped +8 kV ESD pulse waveform  
(IEC 61000-4-2 network), pin 3 to 1 and 2  
unclamped +8 kV ESD pulse waveform  
(IEC 61000-4-2 network)  
vertical scale = 10 V/div  
horizontal scale = 15 ns/div  
vertical scale = 10 A/div  
horizontal scale = 15 ns/div  
GND  
GND  
clamped 8 kV ESD pulse waveform  
(IEC 61000-4-2 network), pin 3 to 1 and 2  
unclamped 8 kV ESD pulse waveform  
(IEC 61000-4-2 network)  
006aab567  
Fig 7. ESD clamping test setup and waveforms  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
7 of 14  
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
8. Application information  
Protection of a single (high-speed) data line in rail-to-rail configuration. The protected data  
line is connected to pin 3. Pin 1 is connected to ground (GND) and pin 2 is connected to  
the supply rail (supply voltage VCC). When the transient voltage exceeds the forward  
voltage drop of one diode, the transient is directed either to the supply rail or to GND.  
The advantages of these solutions are: low line capacitance (0.6 pF typically), fast  
response time, and low clamping voltage.  
V
V
CC  
CC  
D1  
NUP1301U  
Audio  
interface  
D2  
NUP1301U  
006aac518  
Fig 8. Typical application for the protection of one signal line  
Circuit board layout and protection device placement:  
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)  
and surge transients. The following guidelines are recommended:  
1. Place the NUP1301U as close to the input terminal or connector as possible.  
2. The path length between the NUP1301U and the protected line should be minimized.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductors.  
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and  
ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground  
vias.  
9. Test information  
9.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
8 of 14  
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
10. Package outline  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
3
2.2 1.35  
2.0 1.15  
1
2
0.4  
0.3  
0.25  
0.10  
1.3  
Dimensions in mm  
04-11-04  
Fig 9. Package outline SOT323 (SC-70)  
11. Packing information  
Table 10. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package Description  
Packing quantity  
3000  
-115  
10000  
NUP1301U  
SOT323  
4 mm pitch, 8 mm tape and reel  
-135  
[1] For further information and the availability of packing methods, see Section 15.  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
9 of 14  
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
12. Soldering  
2.65  
1.85  
1.325  
solder lands  
solder resist  
2
3
0.6  
(3×)  
solder paste  
1.3  
2.35  
occupied area  
0.5  
(3×)  
1
Dimensions in mm  
0.55  
(3×)  
sot323_fr  
Fig 10. Reflow soldering footprint SOT323 (SC-70)  
4.6  
2.575  
1.425  
(3×)  
solder lands  
solder resist  
occupied area  
1.8  
3.65 2.1  
Dimensions in mm  
preferred transport  
direction during soldering  
09  
(2×)  
sot323_fw  
Fig 11. Wave soldering footprint SOT323 (SC-70)  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
10 of 14  
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
13. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20110128  
Data sheet status  
Change notice  
Supersedes  
NUP1301U v.1  
Product data sheet  
-
-
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
11 of 14  
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
14. Legal information  
14.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
14.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
14.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
12 of 14  
 
 
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
14.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
15. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
NUP1301U  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 28 January 2011  
13 of 14  
 
 
NUP1301U  
NXP Semiconductors  
Ultra low capacitance ESD protection array  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Application information. . . . . . . . . . . . . . . . . . . 8  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Quality information . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packing information . . . . . . . . . . . . . . . . . . . . . 9  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
9.1  
10  
11  
12  
13  
14  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
14.1  
14.2  
14.3  
14.4  
15  
16  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 28 January 2011  
Document identifier: NUP1301U  
 

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