PDTD123ET [NXP]
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW; NPN 500毫安, 50 V电阻配备晶体管; R 1 = 2.2千瓦,R 2 = 2.2千瓦型号: | PDTD123ET |
厂家: | NXP |
描述: | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
文件: | 总10页 (文件大小:67K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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