PH1955L [NXP]
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.; 逻辑电平N沟道增强型场效应晶体管（ FET）使用的TrenchMOS技术的塑料包装。
| 型号： | PH1955L |
| 厂家： | 
NXP |
| 描述： | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. |
| 文件： | 总12页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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