TZA3001BHL [NXP]
SDH/SONET STM4/OC12 laser drivers; SDH / SONET STM4 / OC12激光驱动器
| 型号： | TZA3001BHL |
| 厂家： | 
NXP |
| 描述： | SDH/SONET STM4/OC12 laser drivers |
| 文件： | 总22页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser
drivers
Preliminary specification
1999 Aug 24
Supersedes data of 1997 Sep 08
File under Integrated Circuits, IC19
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
FEATURES
APPLICATIONS
• 622 Mbits/s data input, both Current-Mode Logic (CML)
and Positive Emitter Coupled Logic (PECL) compatible;
maximum 800 mV (p-p)
• SDH/SONET STM4/OC12 optical transmission systems
• SDH/SONET STM4/OC12 optical laser modules.
• Adaptive laser output control with dual loop, stabilizing
optical ONE and ZERO levels
GENERAL DESCRIPTION
The TZA3001AHL, TZA3001BHL and TZA3001U are fully
integrated laser drivers for STM4/OC12 (622 Mbits/s)
systems, incorporating the RF path between the data
multiplexer and the laser diode. Since the dual loop bias
and modulation control circuits are integrated on the IC,
the external component count is low. Only decoupling
capacitors and adjustment resistors are required.
• Optional external control of laser modulation and biasing
currents (non-adaptive)
• Automatic laser shutdown
• Few external components required
• Rise and fall times of 120 ps (typical value)
• Jitter <50 mUI (p-p)
The TZA3001AHL features an alarm function for signalling
extreme bias current conditions. The alarm low and high
threshold levels can be adjusted to suit the application
using only a resistor or a current Digital-to-Analog
Converter (DAC).
• RF output current sinking capability of 60 mA
• Bias current sinking capability of 90 mA
• Power dissipation of 430 mW (typical value)
• Low cost LQFP32 plastic package
• Single 5 V power supply.
The TZA3001BHL is provided with an additional RF data
input to facilitate remote (loop mode) system testing.
TZA3001AHL
The TZA3001U is a bare die version for use in compact
laser module designs. The die contains 40 pads and
features the combined functionality of the TZA3001AHL
and the TZA3001BHL.
• Laser alarm output for signalling extremely low and high
bias current conditions.
TZA3001BHL
• Extra STM4 622 Mbits/s loop mode input; both CML and
PECL compatible.
TZA3001U
• Bare die version with combined bias alarm and loop
mode functionality.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TZA3001AHL
TZA3001BHL
TZA3001U
LQFP32
plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm
SOT401-1
−
bare die; 2000 × 2000 × 380 µm
−
1999 Aug 24
2
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
BLOCK DIAGRAM
ALARM TONE TZERO ALARMLO ALARMHI
26
4
5
21
18
2
MONIN
LASER
CONTROL
BLOCK
22
23
ONE
ZERO
13
12
15
data input
(differential)
LA
28
29
CURRENT
SWITCH
DIN
LAQ
BIAS
DINQ
6
BAND GAP
REFERENCE
BGAP
TZA3001AHL
1, 3, 8, 9,
19, 20
27, 30
11, 14, 16, 17
24, 25, 32
7
10
31
MGK271
4
11
GND
V
V
V
ALS
CC(R) CC(G) CC(B)
Fig.1 Block diagram of TZA3001AHL.
ENL TONE TZERO
h
26
4
5
2
22
23
MONIN
ONE
LASER
CONTROL
BLOCK
ZERO
28
29
DIN
13
12
15
LA
DINQ
CURRENT
SWITCH
MUX
LAQ
BIAS
19
20
DLOOP
DLOOPQ
6
BAND GAP
REFERENCE
BGAP
TZA3001BHL
1, 3, 8, 9,
18, 21
27, 30
11, 14, 16, 17
24, 25, 32
7
10
31
MGK270
4
11
GND
V
V
V
ALS
CC(R) CC(G) CC(B)
Fig.2 Block diagram of TZA3001BHL.
3
1999 Aug 24
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
PINNING
PIN
PAD
SYMBOL
DESCRIPTION
TZA3001AHL TZA3001BHL TZA3001U
GND
1
2
3
−
4
1
2
3
−
4
1
2
3
4
5
ground
MONIN
GND
monitor photodiode current input
ground
IGM
not used; leave unbonded
TONE
connection for external capacitor used to set optical
ONE control loop time constant (optional)
TZERO
5
5
6
connection for external capacitor used to set optical
ZERO control loop time constant (optional)
BGAP
VCC(G)
VCC(G)
GND
6
7
6
7
7
connection for external band gap decoupling capacitor
supply voltage (green domain)
supply voltage (green domain)
ground
8
−
−
9
8
8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
−
GND
9
9
ground
VCC(B)
VCC(B)
GND
10
−
10
−
supply voltage (blue domain)
supply voltage (blue domain)
ground
11
12
13
14
15
16
17
−
11
12
13
14
15
16
17
−
LAQ
laser modulation output inverted
laser modulation output
ground
LA
GND
BIAS
laser bias current output
ground
GND
GND
ground
GND
ground
ALARMHI
VCC(R)
VCC(R)
DLOOP
VCC(R)
DLOOPQ
VCC(R)
ALARMLO
VCC(R)
ONE
18
−
−
maximum bias current alarm reference level input
supply voltage (red domain)
supply voltage (red domain)
loop mode data input
18
−
19
−
19
−
24
−
20
−
supply voltage (red domain)
loop mode data input inverted
supply voltage (red domain)
minimum bias current alarm reference level input
supply voltage (red domain)
optical ONE reference level input
optical ZERO reference level input
ground
20
−
25
26
27
−
−
21
−
−
21
22
23
24
25
−
22
23
24
25
26
−
28
29
30
31
32
33
34
ZERO
GND
GND
ground
ALARM
ENL
alarm output
26
27
loop mode enable input
supply voltage (red domain)
VCC(R)
27
1999 Aug 24
4
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
PIN
PAD
SYMBOL
DIN
DESCRIPTION
TZA3001AHL TZA3001BHL TZA3001U
28
29
30
31
32
−
28
29
30
31
32
−
35
36
37
38
39
40
data input
DINQ
VCC(R)
ALS
data input inverted
supply voltage (red domain)
automatic laser shutdown input
ground
GND
GND
ground
GND
GND
1
2
3
4
5
6
7
8
24
23
ZERO
MONIN
GND
22 ONE
ALARMLO
TONE
TZERO
BGAP
21
20
19
TZA3001AHL
V
V
CC(R)
CC(R)
V
18 ALARMHI
17 GND
CC(G)
GND
MGK273
Fig.3 Pin configuration of TZA3001AHL.
1999 Aug 24
5
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
GND
GND
MONIN
GND
1
2
3
4
5
6
7
8
24
23
ZERO
22 ONE
V
TONE
TZERO
BGAP
21
CC(R)
TZA3001BHL
20 DLOOPQ
19
18
17
DLOOP
V
V
CC(G)
CC(R)
GND
GND
MGK272
Fig.4 Pin configuration of TZA3001BHL.
FUNCTIONAL DESCRIPTION
The RF path is fully differential and contains a differential
preamplifier and a main amplifier. The main amplifier is
designed to handle large peak currents required at the
output laser driving stage and is insensitive to supply
voltage variations. The output signal from the main
amplifier drives a current switch which supplies a
guaranteed maximum modulation current of 60 mA at
pins LA and LAQ. Pin BIAS delivers a guaranteed
maximum DC bias current of up to 90 mA for adjusting the
optical laser output to a level above its light emitting
threshold.
The TZA3001AHL, TZA3001BHL and TZA3001U laser
drivers accept a 622 Mbits/s STM4 Non-Return to Zero
(NRZ) input data stream and generate an output signal
with sufficient current to drive a solid state Fabry Perot
(FP) or Distributed FeedBack (DFB) laser. They also
contain dual loop control circuitry for stabilizing the true
laser optical power levels representing logic 1 and logic 0.
The input buffers present a high impedance to the data
stream on the differential inputs (pins DIN and DINQ).
The input signal can be at CML level of approximately
200 mV (p-p) below the supply voltage, or at PECL level
up to 800 mV (p-p). The inputs can be configured to accept
CML signals by connecting external 50 Ω pull-up resistors
between pins DIN and DINQ to VCC(R). If PECL
compatibility is required, the usual Thevenin termination
can be applied.
Automatic laser control
A laser with a Monitor PhotoDiode (MPD) is required for
the laser control circuit (see Figs 6 and 7).
The MPD current is proportional to the laser emission and
is applied to pin MONIN. The MPD current range is from
100 to 1000 µA (p-p). The input buffer is optimized to cope
with MPD capacitances up to 50 pF. To prevent the input
buffer breaking into oscillation with a low MPD
capacitance, it is required to increase the capacitance to
the minimum value specified in Chapter “Characteristics”
by connecting an extra capacitor between pin MONIN and
For ECL signals (negative and referenced to ground) the
inputs should be AC-coupled to the signal source.
If AC-coupling is applied, a constant input signal (either
low of high) will bring the device in an undefined state.
To avoid this, it is recommended to apply a slight offset to
the input stage. The applied offset must be higher than the
specified value in Chapter “Characteristics”, but much
lower than the applied input voltage swing.
VCC(G)
.
1999 Aug 24
6
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
DC reference currents are applied to pins ZERO and ONE
to set the MPD reference levels for laser LOW and laser
HIGH. A resistor connected between pin ZERO and VCC(R)
and a resistor connected between pin ONE and VCC(R) is
sufficient, but current DACs can also be used.
It should be noted that the MPD current is stabilized, rather
than the actual laser optical output power. Deviations
between optical output power and MPD current, known as
‘tracking errors’, cannot be corrected.
The voltages on pins ZERO and ONE are held constant at
a level of 1.5 V below VCC(R). The reference current
applied to pin ZERO is multiplied by 4 and the reference
current flowing into pin ONE is multiplied internally by 16.
Designing the modulation and bias loop
The optical ONE and ZERO regulation loop time constants
are determined by on-chip capacitances. If the resulting
time constants are found to be too small in a specific
application, they can be increased by connecting external
capacitors to pins TZERO and TONE, respectively.
The reference current and the resistor for the optical ONE
regulation loop (modulation current control) can be
calculated using the following formulae:
The optical ONE loop time constant and bandwidth can be
estimated using the following formulae:
1
16
IONE
=
× I
[A]
(1)
------
MPD (ONE)
80 × 103
ηLASER
τONE = (40 × 10–12 + CTONE) ×
[s]
(5)
(6)
---------------------
1.5
24
IMPD (ONE)
RONE
=
=
[Ω]
(2)
-----------
IONE
-------------------------
1
BONE
=
=
[Hz]
-------------------------
The reference current and resistor for the optical ZERO
regulation loop (bias current control) can be calculated
using the following formulae:
2π × τONE
ηLASER
BONE
-------------------------------------------------------------------------------------------------
1
4
2π × (40 × 10–12 + CTONE) × 80 × 103
IZERO
=
× I
[A]
(3)
--
MPD (ZERO)
The optical ZERO loop time constant and bandwidth can
be estimated using the following formulae:
1.5
-------------
IZERO
6
RZERO
=
=
[Ω]
(4)
----------------------------
IMPD (ZERO)
50 × 103
ηLASER
τZERO = (40 × 10–12 + CTZERO) ×
[s] (7)
In these formulae, IMPD(ONE) and IMPD(ZERO) represent the
monitor photodiode current during an optical ONE and an
optical ZERO, respectively.
---------------------
1
BZERO
=
=
[Hz]
(8)
----------------------------
2π × τZERO
Example: A laser is operating at optical output power
levels of 0.3 mW for laser HIGH and 0.03 mW for laser
LOW (extinction ratio of 10 dB). Suppose the
corresponding MPD currents for this type of laser are
260 and 30 µA, respectively.
ηLASER
BZERO
----------------------------------------------------------------------------------------------------
2π × (40 × 10–12 + CTZERO) × 50 × 103
The term ηLASER (dimensionless) in the above formulae is
the product of the two terms:
In this example the reference current is
1
IONE
=
× 260 = 16.25 µA and flows into pin ONE.
------
16
• ηEO is the electro-optical efficiency which accounts for
the steepness of the laser slope. It is the amount of the
extra optical output power in W/A of modulation current
optical output power.
This current can be set using a current source or simply by
a resistor of the appropriate value connected between
pin ONE and VCC(R). In this example the resistor would be
• R is the monitor photodiode responsivity. It is the
amount of the extra monitor photodiode current in A/W
optical output power.
1.5
16.25
RONE
=
= 92.3 kΩ
----------------
The reference current at pin ZERO in this example is
1
--
4
˙
× 30 = 7.5 µA and can be set using a resistor
IZERO
=
1.5
RZERO
=
= 200 kΩ
---------
7.5
1999 Aug 24
7
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Example: A laser with an MPD has the following
specifications: PO = 1 mW, Ith = 25 mA, ηEO = 30 mW/A,
R = 500 mA/W. The term Ith is the required threshold
current to switch-on the laser. If the laser operates just
above the threshold level, it may be assumed that ηEO
around the optical ZERO level is 50% of ηEO around the
optical ONE level, due to the decreasing slope near the
threshold level.
Manual laser override
The automatic laser control function can be overridden by
connecting voltage sources to pins TZERO and TONE to
take direct control of, respectively, the bias current source
and the modulation current source. The control voltages
should be in the range from 1.4 to 3.4 V to sweep the
modulation current through the range from 1 to 60 mA and
the bias current through the range from 1 to 90 mA. These
current ranges are guaranteed. Depending on the
temperature and manufacturing process spread, current
values higher than the specified ranges can be achieved.
However, bias and modulation currents in excess of the
specified range are not supported and should be avoided.
In this example the resulting bandwidth for the optical ONE
regulation loop, without external capacitance, would be:
30 × 10–3 × 500 × 10–3
2π × 40 × 10–12 × 80 × 103
BONE
=
≈ 750 Hz
---------------------------------------------------------------------
Currents into or out pins TZERO and TONE in excess of
10 µA must be avoided to prevent damage of the circuit.
The resulting bandwidth for the optical ZERO regulation
loop, without external capacitance, would be:
0.5 × 30 × 10–3 × 500 × 10–3
2π × 40 × 10–12 × 50 × 103
Automatic laser shut-down and laser slow start
BZERO
=
≈ 600 Hz
-------------------------------------------------------------------------
The laser modulation and bias currents can be rapidly
switched off when a HIGH-level (CMOS) is applied to
pin ALS. This function allows the circuit to be shut-down in
the event of an optical system malfunction. A 25 kΩ
pull-down resistor defaults the input of pin ALS to the
non active state.
It is not necessary to add additional capacitance with this
type of laser.
Data pattern and bit rate dependency of the control
loop
When a LOW-level is applied to pin ALS, the modulation
and bias current slowly increase to the desired values with
the typical time constants of τONE and τZERO, respectively.
This can be used as a laser slow start.
The constants in Equations (1) and (3) are valid, provided
a frequent presence of sufficiently long runs of ‘constant
zero’ and ‘constant one’. The longest run of zeros and
ones, occurring typically within a single loop time period
(τONE and τZERO), must be at least approximately 6 ns
(e.g. as provided by the A1/A2 frame alignment bytes for
STM4/OC12). In practice, it can be witnessed that the
optical extinction ratio will increase if the bit rate is
increased. Therefore it is important to use the actual data
patterns and bit rate of the final application circuit for
adjusting the optical levels.
Bias alarm for TZA3001AHL
The bias current alarm circuit detects and flags whenever
the bias current is outside a predefined range. This feature
can detect excessive bias current due to laser aging and
laser malfunctioning. The maximum permitted bias current
should be applied to pin ALARMHI with an attenuation
ratio of 1500; the minimum to pin ALARMLO with an
attenuation ratio of 300.
Monitoring the bias and modulation current
Although not recommended, the bias and modulation
currents generated by the laser driver can be monitored by
measuring the voltages on pins TZERO and TONE,
respectively. The relations between these voltages and
the corresponding currents are given as transconductance
values and are specified in Chapter “Characteristics”.
The voltages on pins TZERO and TONE range from
1.4 to 3.4 V. The impedance connected at these pins
should have an extremely high value. It is mandatory to
use a CMOS buffer or an amplifier with an input
impedance higher than 100 GΩ and an extremely low
input leakage current (pA range).
Like the reference currents for the laser current control
loop, the alarm reference currents can be set using
external resistors connected between pins ALARMHI
or ALARMLO and VCC(R). The resistor values can be
calculated using the following formulae:
1.5 × 1500
RALARMHI
=
[Ω]
(9)
---------------------------
IBIAS(max)
1.5 × 300
------------------------
IBIAS(min)
RALARMLO
=
[Ω]
(10)
1999 Aug 24
8
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Example: The following reference currents are required to
limit the bias current range between 6 and 90 mA:
To maximize power supply isolation, the MPD cathode on
the laser should be connected to VCC(G) and the laser
diode anode to VCC(B). It is recommended to provide the
laser anode with a separate decoupling capacitor C11.
6 mA
IALARMLO
IALARMHI
=
= 20 µA and
= 60 µA
-------------
300
The inverted laser driver modulation pin LAQ is generally
not used. To properly balance the output stage, an
equalization network Z1 with an impedance comparable to
90 mA
----------------
1500
=
the laser is connected between pin LAQ and VCC(B)
.
The corresponding resistor values are:
1.5 V × 1500
All external components should be SMD, preferably of
size 0603 or smaller. The components must be mounted
as close to the IC as possible. It is specially recommended
to mount the following components very close to the IC:
RALARMHI
RALARMLO
=
= 25 kΩ and
= 75 kΩ
---------------------------------
90 mA
1.5 V × 300
-----------------------------
6 mA
=
• Power supply decoupling capacitors C2, C4 and C6
• Input matching network on pins DIN and DINQ
• Capacitor C7 on pin MONIN
If the alarm condition is true, the voltage on pin ALARM
goes to HIGH-level (CMOS). This signal could be used, for
example, to disable the laser driver by driving pin ALS
(a latch is needed in between to prevent oscillation).
• Output matching network Z1 at the unused output.
Loop mode for TZA3001BHL
Grounding bare die
In the loop mode the total system application can be
tested. It allows for uninhibited optical transmission
through the fibre front-end (from the photodiode through
the transimpedance stage and the data and clock recovery
unit, to the laser driver and via the laser back to the fibre).
It should be noted that the optical receiver used in
conjunction with the TZA3001BHL must have a loop mode
output in order to complete the test loop.
In addition to the separate VCC domains, the bare die
contains three corresponding ground domains. Isolation
between the GND domains is limited due to the finite
substrate conductance.
Mount the die on a, preferably large and highly conductive,
grounded die pad. All pads GND have to be bonded to
the die pad. The external ground is thus optimally
combined with the die ground, avoiding ground bouncing
problems.
A HIGH-level on pin ENL selects the loop mode. By default
pin ENL is pulled at LOW-level by a 25 kΩ pull-down
resistor.
Layout recommendations
Power supply connections
Layout recommendations for the TZA3001AHL and
TZA3001BHL can be found in application note “AN98090
Fiber optic transceiverboard STM1/4/8, OC3,12,24,
FC/GE”.
Three separate supply domains [labelled VCC(B), VCC(G)
and VCC(R)] are used to provide isolation between the
high-current outputs, the PECL or CML inputs, and the
monitor photodiode current input. The three domains
should be individually filtered before being connected to a
central VCC (see Figs 6 and 7). All supply pins need to
be connected. The supply levels should be equal and in
accordance with the values specified in
Chapter “Characteristics”.
1999 Aug 24
9
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−0.5
MAX.
+6
UNIT
VCC
Vn
supply voltage
DC voltage on
pin MONIN
V
1.3
VCC + 0.5
VCC + 0.5
+3.2
V
V
V
V
V
V
V
V
V
V
V
V
pins TONE and TZERO
pin BGAP
−0.5
−0.5
−0.5
1.3
pin BIAS
VCC + 0.5
VCC + 0.5
VCC + 0.5
VCC + 0.5
VCC + 0.5
pins LA and LAQ
pin ALS
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
pins ONE and ZERO
pins DIN and DINQ
pin ALARM
TZA3001AHL
VCC + 0.5
pins ALARMHI and ALARMLO
pins DLOOP and DLOOPQ
pin ENL
TZA3001AHL
TZA3001BHL
TZA3001BHL
VCC + 0.5
VCC + 0.5
VCC + 0.5
In
DC current on
pin MONIN
−0.5
−0.5
−2.0
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
−40
+2.5
+0.5
+2.5
+200
+100
+0.5
+0.5
+0.5
+10
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
°C
pins TONE and TZERO
pin BGAP
pin BIAS
pins LA and LAQ
pin ALS
pins ONE and ZERO
pins DIN and DINQ
pin ALARM
TZA3001AHL
TZA3001AHL
TZA3001BHL
TZA3001BHL
pins ALARMHI and ALARMLO
pins DLOOP and DLOOPQ
pin ENL
+0.5
+0.5
+0.5
+85
Tamb
Tj
ambient temperature
junction temperature
storage temperature
−40
+125
+150
°C
Tstg
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-s)
Rth(j-c)
thermal resistance from junction to solder point
thermal resistance from junction to case
15
23
K/W
K/W
1999 Aug 24
10
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
CHARACTERISTICS
VCC = 5 V; Tamb = −40 to +85 °C; all voltages measured with respect to GND.
SYMBOL PARAMETER CONDITIONS
Supply
MIN.
TYP.
MAX.
UNIT
VCC
ICC
supply voltage
4.75
5
5.25
V
supply current
note 1
note 2
−
−
65
90
mA
Ptot
total power dissipation
430
810
mW
Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3001BHL); see Fig.5
Vi(p-p)
input voltage
differential
100
250
800
mV
(peak-to-peak value)
VIO
input offset voltage
minimum input voltage
maximum input voltage
input impedance
−25
−
+25
mV
V
VI(min)
VI(max)
Zi
V
−
8
CC(R) − 2 −
−
−
VCC(R) + 0.25 V
for low frequencies;
single-ended
10
12
kΩ
CMOS inputs: pin ALS (and pin ENL on TZA3001BHL)
VIL
LOW-level input voltage
HIGH-level input voltage
−
−
1.5
−
V
VIH
3.5
21
−
V
Rpd(ALS)
internal pull-down resistance on
pin ALS
25.5
30
kΩ
Rpd(ENL)
internal pull-down resistance on
pin ENL
15
25
35
kΩ
CMOS output: pin ALARM (on TZA3001AHL)
VOL
VOH
LOW-level output voltage
HIGH-level output voltage
IOH = −200 µA
IOH = 200 µA
0
−
−
0.2
5
V
V
4.8
Monitor photodiode input: pin MONIN
VI
DC input voltage
1.5
24
96
30
1.8
−
2.0
V
IMPD
monitor photodiode current
laser optical ‘0’
laser optical ‘1’
note 3
260
1040
50
µA
µA
pF
−
CMPD
monitor photodiode capacitance
−
Control loop reference currents: pins ONE and ZERO
Iref(ONE)
reference current on pin ONE
reference voltage on pin ONE
reference current on pin ZERO
reference voltage on pin ZERO
note 4
6
−
65
µA
V
Vref(ONE)
Iref(ZERO)
Vref(ZERO)
referenced to VCC(R)
note 4
−1.55
6
−1.5
−
−1.45
65
µA
V
referenced to VCC(R)
−1.55
−1.5
−1.45
Control loop time constants: pins TONE and TZERO
VTONE
voltage on pin TONE
floating output
note 5
1.4
−
−
3.4
−
V
gm(TONE)
VTZERO
gm(TZERO)
transconductance of pin TONE
voltage on pin TZERO
100
−
mA/V
V
floating output
1.4
−
3.4
−
transconductance of pin TZERO note 6
160
mA/V
1999 Aug 24
11
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Laser modulation outputs: pins LA and LAQ
IO
modulation output current
note 7
3
−
60
10
mA
IO(off)
output current during laser
shutdown
−
−
µA
VO
output voltage
current rise time
current fall time
2
−
−
−
−
5
V
tr
note 8
note 8
note 9
120
120
−
300
300
50
ps
ps
mUI
tf
Jo(p-p)
intrinsic electrical output jitter
(peak-to-peak value)
Bias current output: pin BIAS
IO
output current
note 10
2.5
−
−
90
10
mA
IO(off)
output current during laser
shutdown
−
µA
tres(off)
response time after laser
shutdown
IBIAS = 90 mA;
note 11
−
−
−
1
5
µs
VO
output voltage
1
V
Alarm threshold inputs: pin ALARMHI and ALARMLO (on TZA3001AHL)
Iref(ALARMLO)
threshold reference current on
pin ALARMLO
lower alarm; note 12
referenced to VCC(R)
higher alarm; note 12
referenced to VCC(R)
6
−
65
µA
V
Vref(ALARMLO) optical reference voltage on
pin ALARMLO
−1.55
6
−1.5
−
−1.45
65
Iref(ALARMHI)
threshold reference current on
pin ALARMHI
µA
V
Vref(ALARMHI) optical reference voltage on
pin ALARMHI
−1.55
−1.5
−1.45
Notes
1. Remarks to the supply current:
a) The value for ICC does not include the modulation and bias currents through pins LA, LAQ and BIAS.
b) Typical value for ICC refers to, but does not include, IMOD = 30 mA and IBIAS = 45 mA.
c) The maximum value of ICC refers to, but does not include, IMOD = 60 mA and IBIAS = 90 mA.
2. Remarks to the power dissipation:
a) The value for Ptot includes the modulation and bias currents through pins LA, LAQ and BIAS.
b) The typical value for Ptot is the on-chip dissipation with IMOD = 30 mA and VLA = VLAQ = 2 V, IBIAS = 45 mA and
VBIAS = 1 V and typical process parameters.
c) The maximum value for Ptot is the on-chip dissipation with IMOD = 60 mA and VLA = VLAQ = 2 V, IBIAS = 90 mA and
VBIAS = 1 V and worst case process parameters.
3. The minimum value of the capacitance on pin MONIN is required to prevent instability.
4. The reference currents can be set using a resistor connected between pins ONE or ZERO and VCC
(see Section “Automatic laser control”). The corresponding ZERO level MPD current range is from 24 to 260 µA.
The ONE level MPD current range is from 96 to 1040 µA.
5. The specified transconductance is the ratio between the modulation current at pins LA or LAQ and the voltage at
pin TONE, under small signal conditions.
1999 Aug 24
12
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
6. The specified transconductance is the ratio between the biasing current at pin BIAS and the voltage at pin TZERO,
under small signal conditions.
7. The values indicate the guaranteed interval, i.e. the lowest attainable output current is always lower than 3 mA and
the highest output current always higher than 60 mA.
8. The voltage rise and fall times can be larger, due to capacitive effects. Specifications are guaranteed by design and
characterization. Each device is tested at full operating speed to guarantee the RF functionality.
9. Measured in a frequency band from 250 kHz to 5 MHz, according to “ITU-T Recommendation G.813”.
The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification
is guaranteed by design.
10. The values indicate the guaranteed interval, i.e. the lowest output current always is less than 2.5 mA and the highest
output current is always more than 90 mA.
11. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH-level) and
the extinction of the bias current (at 10% of the original value).
12. The reference currents can be set by using a resistor between VCC(R) and pins ALARMLO or ALARMHI;
see Section “Bias alarm for TZA3001AHL” for detailed information. The corresponding range of low-bias thresholds
is between 1.8 and 19.5 mA. The high-bias threshold range is from 9 to 97.5 mA.
V
I(max)
V
CC(R)
V
i(p-p)
V
IO
V
I(min)
MGK274
Fig.5 Logic level symbol definitions for data inputs.
1999 Aug 24
13
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
APPLICATION INFORMATION
L1
C1
C2
1 µF
22 nF
L2
V
CC
C3
C4
1 µF
22 nF
L3
C5
C6
1 µF
22 nF
data inputs
normal mode
(CML/PECL compatible)
4
V
V
V
ALS
DINQ DIN
ALARM
CC(G) CC(B) CC(R)
(1)
(4)
(4)
(5)
(5)
C7
R1
R2
R3
R4
7
10
19, 20,
27, 30
31
29
28
26
23
MONIN
ZERO
ONE
2
(2)
(3)
C8
C9
22
TONE
4
5
6
TZA3001AHL
TZERO
ALARMLO
ALARMHI
21
18
1, 3, 8, 9, 11,
14, 16, 17,
24, 25, 32
C10
BGAP
22 nF
15
BIAS
13
LA
12
GND
11
LAQ
R5
18 Ω
(6)
Z1
L1
C11
MGK276
MPD
laser
(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”).
(2) C8 enhances modulation control loop time constant (optional).
(3) C9 enhances bias control loop time constant (optional).
(4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”).
(5) R3 and R4 are used for minimum and maximum bias currents setting (see Section “Bias alarm for TZA3001AHL”).
(6) Z1 is required for balancing the output stage (see Section “Power supply connections”).
Fig.6 Application diagram showing the TZA3001AHL configured for 622 Mbits/s (STM4/OC12).
1999 Aug 24
14
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
L1
C1
C2
1 µF
22 nF
L2
V
CC
C3
C4
1 µF
22 nF
L3
C5
C6
1 µF
22 nF
data inputs
normal mode
(CML/PECL compatible)
4
V
V
V
ALS DINQ DIN
ENL
26
CC(G) CC(B) CC(R)
(1)
(4)
(4)
C7
R1
R2
7
10
18, 21,
27, 30
31
29
28
MONIN
ZERO
2
23
22
ONE
(2)
(3)
C8
C9
TONE
4
5
6
TZA3001BHL
TZERO
DLOOPQ
DLOOP
20
19
loop mode inputs
(CML/PECL
1, 3, 8, 9, 11,
14, 16, 17,
24, 25, 32
C10
BGAP
compatible)
22 nF
15
BIAS
13
LA
12
GND
11
LAQ
R3
18 Ω
(5)
Z1
L1
C11
MGK275
MPD
laser
(1) C7 is required to meet the minimum capacitance value on pin MONIN (optional, see Section “Automatic laser control”).
(2) C8 enhances modulation control loop time constant (optional).
(3) C9 enhances bias control loop time constant (optional).
(4) R1 and R2 are used for optical ZERO and ONE reference currents setting (see Section “Automatic laser control”).
(5) Z1 is required for balancing the output stage (see Section “Power supply connections”).
Fig.7 Application diagram showing the TZA3001BHL configured for 622 Mbits/s (STM4/OC12).
1999 Aug 24
15
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
BONDING PADS
COORDINATES(1)
COORDINATES(1)
SYMBOL
PAD
SYMBOL
PAD
X
Y
X
Y
GND
1
2
−664
−524
−367
−227
−70
−910
−910
−910
−910
−910
−910
−910
−910
−910
−910
−630
−490
−350
−210
−70
VCC(R)
DLOOP
DLOOPQ
VCC(R)
ALARMLO
ONE
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
+384
+227
+87
+910
+910
+910
+910
+910
+910
+910
+910
+681
+541
+384
+227
+70
MONIN
GND
3
IGM
4
−70
TONE
TZERO
BGAP
VCC(G)
VCC(G)
GND
5
−210
−367
−524
−681
−910
−910
−910
−910
−910
−910
−910
−910
−910
−910
6
+87
7
+244
+384
+524
+664
+910
+910
+910
+910
+910
+910
+910
+910
+910
+910
+681
+541
ZERO
GND
8
9
GND
10
11
12
13
14
15
16
17
18
19
20
21
22
ALARM
ENL
GND
VCC(B)
VCC(B)
GND
VCC(R)
DIN
DINQ
VCC(R)
ALS
−70
LAQ
−227
−367
−551
−664
LA
+70
GND
+210
+350
+490
+630
+910
+910
GND
BIAS
GND
GND
Note
GND
1. All x and y coordinates represent the position of the
centre of the pad in µm with respect to the centre of the
die (see Fig.8).
GND
ALARMHI
1999 Aug 24
16
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
(1)
2 mm
30 29 28 27 26
31
25 24 23 22 21
20
GND
ALARM
ENL
GND
GND
BIAS
GND
LA
32
33
34
35
19
18
17
16
V
CC(R)
DIN
(1)
x
0
2 mm
0
y
DINQ
LAQ
36
37
38
39
40
15
14
13
12
11
V
GND
V
CC(R)
ALS
GND
GND
CC(B)
TZA3001U
V
CC(B)
GND
1
2
3
4
5
6
7
8
9
10
MGL192
(1) Typical value.
Fig.8 Bonding pad locations of TZA3001U.
Table 1 Physical characteristics of bare die
PARAMETER
VALUE
Glass passivation
Bonding pad dimension
Metallization
Thickness
2.1 µm PSG (PhosphoSilicate Glass) on top of 0.7 µm silicon nitride
minimum dimension of exposed metallization is 90 × 90 µm (pad size = 100 × 100 µm)
1.2 µm AlCu (1% Cu)
380 µm nominal
Size
2.000 × 2.000 mm (4.000 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
<430 °C; recommended die attache is glue
<15 s
Attache temperature
Attache time
1999 Aug 24
17
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
PACKAGE OUTLINE
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
c
y
X
A
E
17
24
Z
16
25
E
e
A
H
2
E
A
(A )
3
A
1
w M
p
θ
pin 1 index
b
L
p
32
9
L
1
8
detail X
Z
v M
D
A
e
w M
b
p
D
B
H
v
M
B
D
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
D
H
L
L
v
w
y
Z
Z
E
θ
1
2
3
p
E
p
D
max.
7o
0o
0.15 1.5
0.05 1.3
0.27 0.18 5.1
0.17 0.12 4.9
5.1
4.9
7.15 7.15
6.85 6.85
0.75
0.45
0.95 0.95
0.55 0.55
mm
1.60
0.25
0.5
1.0
0.2 0.12 0.1
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-12-19
97-08-04
SOT401-1
1999 Aug 24
18
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices () or printed-circuit boards with
a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Aug 24
19
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
REFLOW(1)
BGA, SQFP
not suitable
suitable
suitable
suitable
suitable
suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2)
PLCC(3), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
not recommended(3)(4)
not recommended(5)
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
1999 Aug 24
20
Philips Semiconductors
Preliminary specification
TZA3001AHL; TZA3001BHL;
TZA3001U
SDH/SONET STM4/OC12 laser drivers
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
BARE DIE DISCLAIMER
All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
1999 Aug 24
21
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
67
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465012/02/pp24
Date of release: 1999 Aug 24
Document order number: 9397 750 05282
相关型号：
TZA3001BHL/C4
IC SPECIALTY INTERFACE CIRCUIT, PQFP32, PLASTIC, SOT-401, LQFP-32, Interface IC:Other
NXP
TZA3004HL-T
IC CLOCK RECOVERY CIRCUIT, PQFP48, 7 X 7 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT-313-2, LQFP-48, ATM/SONET/SDH IC
NXP
©2020 ICPDF网 联系我们和版权申明