40N10H [PINGWEI]
40A mps,100 Volts N-CHANNEL MOSFET;
| 型号： | 40N10H |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 40A mps,100 Volts N-CHANNEL MOSFET |
| 文件： | 总2页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A
Low gate charge
Low Ciss
Fast switching
TO-220AB
40N10
ITO-220AB
40N10F
100% avalanche tested
Improved dv/dt capability
TO-263
40N10B
TO-262
40N10H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
40N10
UNIT
Drain-Source Voltage
VDSS
VGSS
ID
100
±20
40
V
Gate-Source Voltage
Continuous Drain Current
A
Pulsed Drain Current(Note1)
IDM
100
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
EAS
500
mJ
A
IAR
40
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
EAR
50
mJ
V/ns
℃
dv/dt
TJ,TSTG
4.0
-55 to +150
TL
260
℃
10
lbf·in
N·m
Mounting Torque
6-32 or M3 screw
1.1
Thermal Characteristics
TO-262
TO-263
Units
ITO-220
TO-220
Parameter
Symbol
Maximum Junction-to-Case
Maximum Power Dissipation
RthJC
PD
2.5
50
1.25
100
1.25
100
℃/W
TC=25℃
W
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Mix
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
/ΔTJ
VGS=0V,ID=250uA
100
－
－
－
V
Reference to 25℃，
ID=250uA
－
0.5
V/℃
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
IDSS
VDS=100V,VGS=0V
VGS=20V,VDS=0V
VGS=-20V,VDS=0V
－
－
－
－
－
－
1
uA
nA
nA
IGSSF
100
-100
IGSSR
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
VGS(th)
RDS(on)
VDS=VGS,ID=250uA
VGS=10V,ID=20A
2
－
－
4
V
－
40
mΩ
Ciss
Coss
Crss
VDS=25V,VGS=0V,
f=1.0MHZ
－
－
－
680
75
880
100
－
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
3.8
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
VDD=40V,ID=40A,
－
－
－
－
－
－
－
17
30
42
20
－
－
－
－
－
ns
ns
RG=25Ω
(Note4,5)
－
ns
－
ns
Qg
Qgs
Qgd
VDS=80V,ID=40A,
300
150
7.5
nC
nC
nC
VGS=10V, (Note4,5)
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes
IS
ISM
VSD
trr
－
－
－
－
－
－
－
40
160
1.5
－
A
A
IS=40A,VGS=0V
－
V
VGS=0V,IS=40A,
575
3.65
ns
uC
dIF/dt=100A/us, (Note4)
Qrr
－
1.
2.
3.
4.
5.
Repetitive Rating:pulse width limited by maximum junction temperature.
VDD=20V,L=0.5mH,Rg=25Ω,IAS=40A , TJ=25℃.
SD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
I
Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
相关型号：
40N60SCD1
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM
IXYS
40N60SCD1_03
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM
IXYS
©2020 ICPDF网 联系我们和版权申明