50N06H [PINGWEI]
50A mps,60 Volts N-CHANNEL MOSFET;
| 型号： | 50N06H |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 50A mps,60 Volts N-CHANNEL MOSFET |
| 文件： | 总2页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A
Low gate charge
Low Ciss
Fast switching
TO-220AB
50N06
ITO-220AB
50N06F
100% avalanche tested
Improved dv/dt capability
TO-263
50N06B
TO-262
50N06H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
50N06
UNIT
Drain-Source Voltage
VDSS
VGSS
ID
60
±20
V
Gate-Source Voltage
Continuous Drain Current
52.4
A
Pulsed Drain Current(Note1)
IDM
210
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
EAS
990
mJ
A
IAR
52.4
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
EAR
12
mJ
V/ns
℃
dv/dt
TJ,TSTG
7.0
-55 to +150
TL
260
℃
10
lbf·in
N·m
Mounting Torque
6-32 or M3 screw
1.1
Thermal Characteristics
TO-262
TO-263
Units
ITO-220
TO-220
Parameter
Symbol
Maximum Junction-to-Case
Maximum Power Dissipation
RthJC
PD
1.66
75
0.83
150
0.83
150
℃/W
TC=25℃
W
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Mix
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
/ΔTJ
VGS=0V,ID=250uA
60
－
－
－
V
Reference to 25℃，
ID=250uA
－
0.6
V/℃
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
IDSS
VDS=60V,VGS=0V
VGS=20V,VDS=0V
VGS=-20V,VDS=0V
－
－
－
－
－
－
1
uA
nA
nA
IGSSF
100
-100
IGSSR
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
VGS(th)
RDS(on)
VDS=10V,ID=250uA
VGS=10V,ID=25A
2.0
－
－
4.0
16
V
－
mΩ
Ciss
Coss
Crss
VDS=25V,VGS=0V,
f=1.0MHZ
－
－
－
1250
445
90
1630
580
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
120
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
VDD=30V,ID=50A,
－
－
－
－
－
－
－
20
380
80
50
770
170
300
32
ns
ns
RG=25Ω
(Note4,5)
ns
145
24.5
6
ns
Qg
Qgs
Qgd
VDS=48V,ID=50A,
VGS=5V, (Note4,5)
nC
nC
nC
－
14.5
－
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
Pulsed Diode Forward Current
Diode Forward Voltage
IS
ISM
VSD
trr
－
－
－
－
－
－
－
50
200
1.5
－
A
A
IS=50A,VGS=0V
－
V
Reverse Recovery Time
VGS=0V,IS=50A,
65
ns
uC
dIF/dt=100A/us, (Note4)
Reverse Recovery Charge
Qrr
125
－
Notes
1.
2.
3.
4.
5.
Repetitive Rating:pulse width limited by maximum junction temperature.
VDD=10V,,L=0.8mH,Rg=25Ω,IAS=50A , TJ=25℃.
SD≤ID,dI/dt=_A/us,VDD≤BVDSS,starting TJ=25℃.
I
Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
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