ABS08 [PINGWEI]
SINGLE PHASE1.0AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS;型号: | ABS08 |
厂家: | Chongqing Pingwei Enterprise co.,Ltd |
描述: | SINGLE PHASE1.0AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
文件: | 总2页 (文件大小:216K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ABS02 THRU ABS10
SINGLE PHASE1.0AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURE
ABS
.165(4.2)
.Glass passivated junction.
.010(.25)
.006(.15)
.150(3.8)
.Ideal for printed circuit board.
.Reliable low cost construction utilizing
molded plastic technique.
.006(.15)
.002(.05)
-
+
.260(6.60)
.248(6.30)
.181(4.6)
.173(4.4)
.High surge current capability.
.High temperature soldering guaranteed:
260℃/10 seconds at terminals.
.UL Recognized File # E338195.
5°
5°
R.004(R.1)
.030(.75)
MECHANICAL DATA
.033(.75)
.022(.55)
.018(.45)
.Case Material: “Green” Molding compound,
UL flammability classification rating 94V-0,
“Free halogen”
.201(5.1)
.193(4.9)
.028(.70)
.020(.50)
.059(1.5)
.051(1.3)
.Moisture sensitivity level:level 2a,per J-STD-020
.Polarity:Polarity as marked on the body
.Weight: 0.10g (approximately)
-
~~
+
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
SYM
Type Number
BOL
ABS02
ABS04
ABS06
ABS08
ABS10
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
VRRM
VRMS
VDC
Maximum DC blocking Voltage
Maximum Average Forward rectified Current
@ TA=40℃
1000
1.0
IF(AV)
A
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
30
IFSM
Maximum Instantaneous
Forward Voltage
@ IF =1.0A DC
@ IF = 0.5A DC
1.1
0.95
V
VF
IR
Maximum DC Reverse Current @TJ =25°C
5.0
μA
at rated DC blocking voltage
I2t Rating for Fusing (t﹤8.3ms)
@TJ =125°C
100.0
3.74
A2Sec
pF
2
I t
Typical Junction Capacitance Per Leg (Note1)
13
CJ
RJC
RJA
TSTG
TJ
25
Typical Thermal Resistance (Note2)
°C /W
80
Storage Temperature
Operating Junction Temperature
Note:
-55 to +150
-55 to +150
°C
°C
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal resistance junction to case, lead and ambient in accordance with JESD-51.
Unit mounted on glass-epoxy substrate with 1oz/ft2_10x10 mm copper pad per pin with heatsink
- 7 -
RATING AND CHARACTERISTIC CURVES ( ABS02 THRU ABS10 )
FIG.1-TYPICAL FORWARD CURRENT DERATING
CURVE
FIG.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10.0
TC
1.0
1.0
.1
TA
TJ=25℃
Pulse Width=300μs
1% Duty Cycle
0.5
Single Phase Half
Wave 60Hz
Resistive or
inductive Load
0
.01
200
150
AMBIENT,CASE TEMPERTURE,(℃)
100
0
50
1.0
INSTANEOUS FORWARD VOLTAGE,(V)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
.6
.8
1.2
1.4
FIG.3-MAXIMUN NON-REPETITIVE FORWARD
SURGE CURRENT
100
40
30
20
10
TJ=125℃
TJ=100℃
8.3ms Single Half
Sine-Wave (JEDEC
Method)
10
1.0
TJ=25℃
0
.1
120
100
140
0
40
80
100
20
60
1
10
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-TYPIAL JUNCTION CAPAOTANCE
16
12
8
4
0
100
1
10
REVERCE VOLTAGE,(V)
- 8 -
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