GBJ2008 [PINGWEI]
GLASS PASSIVATED BRIDGE RECTIFIER; 玻璃钝化整流桥
| 型号： | GBJ2008 |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总1页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
GBJ20005 THRU GBJ2010
GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：20.0A
FEATURES
·Low leakage
GBJ
.189(4.8)
.173(4.4)
1.193(30.3)
1.169(29.7)
·Low forward voltage
·Surge overload ratings-240 Amperes
HOLE FOR NO.
.150(3.8)
.134(3.4)
6 SCREW
.119
(0.5)
.800(20.3)
.697(17.7)
.441(11.2)
.425(10.8)
.184(3.4)
.122(3.1)
+ ~ ~ -
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.114(2.9)
.098(2.5)
.708(18.0)
.669(17.0)
.165(4.2)
.150(3.8)
.031(0.8)
.023(0.6)
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting: Thru hole for 6# screw
·Weight: 6.6 grams
.402(1.1)
.386(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
GBJ GBJ GBJ GBJ GBJ GBJ GBJ
20005 2001 2002 2004 2006 2008 2010
units
SYMBOL
VRRM
VRMS
VDC
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
100 200 400 600 800 1000
Maximum Average Forward rectified Output
Current at TC=100°C
Io
20
A
A
V
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
IFSM
240
Maximum Forward Voltage Drop per element at
10.0 A DC
VF
1.1
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
@ TA=25°C
IR
µA
500
@ TA=125°C
I2t
CJ
240
60
A2Sec
pF
I2t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance per Element(Note 1)
Typical Thermal Resistance, Junction to Case
(Note 2)
RθJA
2.7
°C/W
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
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相关型号：
GBJ2008-BP
Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN
MCC
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