GBP402 [PINGWEI]

SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS;


型号：	GBP402
厂家：	Chongqing Pingwei Enterprise co.,Ltd
描述：	SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
文件：	总2页 (文件大小：201K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GBP4005 THRU GBP410

SINGLE PHASE4.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS

GBP

FEATURE

.UL Listed Under Recognized Component Index,

File Number E338195

.580(14.75)

.561(14.25)

.110(2.8)

45°

Chamfer

.134(3.4)

.126(3.2)

.Glass passivated chip junctions

.High case dielectric stength

.425(10.8)

.394(10.0)

.Low Reverse Leakage Current

.High surge current capability

.043(1.1)

.035(0.9)

.024(0.6)

.016(0.4)

.057(1.45)

.046(1.17)

.Ideal for Printed Circuit Board Applications

.276(7.0)

.236(6.0)

.106(2.7)

.091(2.3)

MECHANICAL DATA

.034(0.86)

.026(0.67)

.Case: GBP

.Case Material: Molded Plastic.

UL Flammability Classification Rating 94V-0

.Terminals: Pure tin plated, Lead free.

Leads solderable per MIL-STD-750, Method 2026.

.Polarity: Marked on body

.160(4.1)

.140(3.5)

SPACING

.Weight: 1.5 grams

Dimensions in inches and (millimeters)

.Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%

SYM

GBP GBP GBP GBP GBP GBP GBP

Type Number

units

BOL

V_RRM

V_RMS

V_DC

4005

401

100

402

200

140

200

404

400

280

400

4.0

406

600

420

600

408

800

560

800

410

1000

700

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

100

1000

Maximum Average Forward (with heatsink Note2)

Rectified Current @ T_C=100°C(without heatsink)

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_F(AV)

2.0

120

I_FSM

Maximum Forward Voltage

Drop per element

@ 4.0A DC

@ 2.0A DC

@T_J=25°C

@T_J=125°C

1.1

1.0

V_F

I_R

Maximum DC Reverse Current

at rated DC blocking voltage

I²t Rating for Fusing (t﹤8.3ms)

5.0

μA

500.0

59.7

A²Sec

I t

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Storage Temperature

C_J

R_(JC)

T_STG

T_J

3.0

°C/W

°C

-55 to +150

Operating Junction Temperature

Note:

°C

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2.Device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.

- 53 -

RATING AND CHARACTERISTIC CURVES (GBP4005 THRU GBP410)

FIG.1-TYPICAL FORWARD CURRENT

DERATING CURVE

FIG.2-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

4.0

2.0

With Heatsink

1.0

TJ=25℃

Pulse Width=300μs

1% Duty Cycle

Without Heatsink

0.1

Single Phase Half Wave 60Hz

Resistive or inductive Load

.01

150

125

1.2

0.8

100

0.6

1.0

INSTANEOUS FORWARD VOLTAGE,(V)

CASE TEMPERTURE,(℃)

FIG.3-MAXIMUN NON-REPETITIVE

FORWARD SURGE CURRENT

FIG.4-TYPIAL JUNCTION CAPAOTANCE

1000

100

120

8.3ms Single Half

Sine-Wave (JEDEC

Method)

100

REVERSE VOLTAGE,(V)

NUMBER OF CYCLES AT 60Hz

FIG.5-TYPICAL REVERSE CHARACTERISTICS

1000

100

T=150℃

TJ=125℃

TJ=100℃

1.0

TJ=25℃

0.1

100

120

PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)

- 54 -

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