SF1008CT [PINGWEI]
10A Superfast Recovery Rectifier;
| 型号： | SF1008CT |
| 厂家： | 
Chongqing Pingwei Enterprise co.,Ltd |
| 描述： | 10A Superfast Recovery Rectifier |
| 文件： | 总1页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF1004(F,B,H)CT thru SF1008(F,B,H)CT
10A Superfast Recovery Rectifier
FEATURE
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High ESD capability
TO-220AB
SF10XXCT
ITO-220AB
High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
SF10XXFCT
MECHANICAL DATA
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Mounting position: any
TO-263
TO-262
TYPICALAPPLICATIONS
SF10XXBCT
SF10XXHCT
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
SF1004CT
SF1006CT
SF1008CT
Parameter
Symbol
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
10.0
5.0
600
420
600
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at TC=90°C
total device
per diode
IF(AV)
IFSM
A
A
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Maximum Reverse Recovery Time (Note 1)
Junction Capacitance (Note2)
70
35
trr
CJ
ns
pF
°C
°C
70
50
Storage Temperature Range
TSTG
TJ
-55 to +150
-55 to +150
Operation Temperature Range
ELECTRONICAL CHARACTERISTICS
SF1004CT
SF1006CT
SF1008CT
Parameter
Symbol
units
Maximum Forward Voltage Drop per diode at 5A (Note 3)
VF
IR
1.0
1.3
10.0
400.0
1.7
V
@ TC =25°C
@ TC=100°C
Maximum DC Reverse Current at rated
DC blocking voltage (Note 3)
μA
THERMAL CHARACTERISTICS
TO-262
TO-263
ITO-220
TO-220
units
Parameter
Symbol
Typical Thermal Resistance (Note 4)
Rth (JC)
3.5
2.5
2.5
°C/W
Note:
1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
3. Pulse test: 300 μs pulse width, 1% duty cycle.
4. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
http:// www.perfectway.cn
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