PM29F004T-70PC
更新时间:2024-09-18 01:41:02
品牌:PMC
描述:4 Megabit (512K X 8) 5.0 Volt-Only CMOS Flash Memory
PM29F004T-70PC 概述
4 Megabit (512K X 8) 5.0 Volt-Only CMOS Flash Memory 4兆位( 512K ×8 ), 5.0伏的CMOS只闪存
PM29F004T-70PC 数据手册
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PMC
Pm29F004
4 Megabit (512K X 8) 5.0 Volt-only CMOS Flash Memory
FEATURES
• Data# Polling and Toggle Bit Features
• Single Power Supply Operation
- 5.0 V ± 10% Read/Program/Erase
• Low Power Consumption
- Typical 15 mA active read current
- Typical 40 mA program/erase current
- Typical 0.1 µA CMOS standby current
• High Performance Read
- 70/90 ns access time
• Memory Blocks Architecture
- One 16 Kbytes top or bottom Boot Block with
software lockout
- Two 8 Kbytes Parameter Blocks
- One 96 Kbytes Main Block
• High Product Endurance
- Guarantee 10,000 program/erase cycles
- Typical 50,000 program/erase cycles
- Minimum 10 years data retention
- Three 128 Kbytes Main Blocks
• Industrial Standard Pin-out and Packaging
- 32-pin Plastic DIP
- 32-pin PLCC
• Automatic Block Erase and Byte Program
- Typical 12 µs/byte programming
- Typical 50 ms block or chip erase
• Manufactured on 0.30 µm process
• Hardware Data Protection
GENERAL DESCRIPTION
The Pm29F004 is a 4 Megabit, 5 Volt-only Flash Memory organized as 524,288 bytes of 8 bits each. This
device is designed to use a 5.0 Volt power supply to perform in-system programming, 12.0 Volt VPP power supply
for program and erase operation is not required. The device can be programmed in standard EPROM program-
mers as well.
The 4 Megabit memory array is divided into seven blocks of one 16 Kbytes, two 8 Kbytes, one 96 Kbytes,
and three 128 Kbytes for BIOS and parameters storage. The seven blocks allow users to flexibly make chip erase
or block erase operation. The block erase feature allows a particular block to be erased and reprogrammed
without affecting the data in other blocks. After the device performed chip erase or block erase operation, it can
be reprogrammed on a byte-by-byte basis.
The device has a standard microprocessor interface as well as JEDEC single-power-supply Flash compatible
pin-out and command set. The program operation of Pm29F004 is executed by issuing the program command
code into command register. The internal control logic automatically handles the programming voltage ramp-up
and timing. The erase operation of Pm29F004 is executed by issuing the chip erase or block erase command
code into command register. The internal control logic automatically handles the erase voltage ramp-up and
timing. The preprogramming on the array which has not been programmed is not required before the erase
operation. The device also features Data# Polling and Toggle Bit function, the end of program or erase operation
can be detected by Data# Polling of I/O7 or Toggle Bit of I/O6.
The device has an optional 16 Kbytes top or bottom boot block with a software lockout feature for data
security. The boot block can be used to store user secure code. When the lockout feature is enabled, the boot
block is permanently protected from being reprogrammed.
The Pm29F004 is manufactured on PMC’s advanced 0.30 µm, P-FLASH™, nonvolatile memory process.
The device is packaged in a 32-pin DIP and PLCC with access time of 70 and 90 ns.
Programmable Microelectronics Corp.
Issue Date: November, 2000 Rev:1. 0
1
Pm29F004 Preliminary
PMC
CONNECTION DIAGRAMS
1
2
3
32
31
A18
A16
V
CC
W E #
A17
A14
4
3
2
1
32
31
30
30
29
28
27
26
25
24
23
22
A15
A7
5
6
29
28
A14
A13
4
5
6
A12
A7
A6
A6
A5
A13
A8
7
27
26
25
A8
A9
A5
A4
A3
7
8
A9
A4
A3
8
A11
9
A11
9
OE#
A10
CE#
I/O7
I/O6
I/O5
I/O4
10
11
A2
A1
A0
10
24
23
22
21
A2
OE#
A10
11
12
A1
A0
12
13
14
15
21
20
19
I/O0
CE#
I/O7
I/O1
I/O2
13
I/O0
18
17
18
20
16
17
19
15
14
16
G N D
I/O3
32-Pin PDIP
32-Pin PLCC
LOGIC SYMBOL
19
A0-A18
8
I/O0-I/O7
CE#
OE#
W E #
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
2
Pm29F004 Preliminary
PMC
PRODUCT ORDERING INFORMATION
Pm29F004
T
-70 P C
Temperature Range
C = Commercial (0°C to +70°C)
Package Type
P = 32-pin Plastic DIP (32P)
J = 32-pin Plastic J-Leaded Chip Carrier (32J)
Speed Option
Boot Block Location
T = Top Boot Block
B = Bottom Boot Block
PMC Device Number
Boot
Location
Temperature
Package
t
ACC
Part Number
Pm29F004T-70JC
Range
(ns)
32J
32P
32J
32P
32J
32P
32J
32P
Top
Pm29F004T-70PC
Pm29F004B-70JC
Pm29F004B-70PC
Pm29F004T-90JC
Pm29F004T-90PC
Pm29F004B-90JC
Pm29F004B-90PC
Commercial
(0°C to +70°C)
70
90
Bottom
Top
Commercial
(0°C to +70°C)
Bottom
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
3
Pm29F004 Preliminary
PMC
PIN DESCRIPTIONS
SYMBOL
TYPE
DESCRIPTION
Address Inputs: For memory addresses and command register.
Addresses are internally latched during a write cycle.
A0 - A18
INPUT
INPUT
Chip Enable: CE# low activates the device's internal circuitries
for device operation. CE# high deselects the device and
switches into standby mode to reduce the power consumption.
Please refer to DC characteristics table.
CE#
Write Enable: Activate the device for write operation. WE# is
active low.
WE#
OE#
INPUT
INPUT
Output Enable: Control the device's data buffers during a read
cycle. OE# is active low.
Data Inputs/Outputs: Inputs array data during program operation,
when CE# and WE# are active. Data is internally latched during
the write and program cycles. When CE# and OE# are active,
the output sends array data, manufacturer code or device code.
The data pins float to tri-state when the chip is deselected or the
outputs are disabled.
INPUT/
OUTPUT
I/O0 - I/O7
VCC
Device Power Supply
Ground
GND
NC
No Connection
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
4
Pm29F004 Preliminary
PMC
BLOCK DIAGRAM
ERASE/PROGRAM
VOLTAGE
I/O0-I/O7
GENERATOR
I/O BUFFERS
HIGH VOLTAGE
SWITCH
W E #
COMMAND
REGISTER
DATA
LATCH
SENSE
AMP
CE,OE LOGIC
CE#
OE#
Y-GATING
Y-DECODER
X-DECODER
MEMORY
ARRAY
A0-A18
BOOT BLOCK LOCKOUT DETECTION
DEVICE OPERATION
The state of the Boot Block lockout can be de-
tected by software product identification entry. After
entry, selects Boot Block address with A0 = “0” and A1
= “1” and then read I/O0. A data of “0” means the lock-
out feature is disabled and the Boot Block can be erased
or programmed. A data of “1” means the lockout fea-
ture is enabled and the Boot Block is protected. Prod-
uct identification exit must be executed before the de-
vice returns to read mode.
READ OPERATION
The access of Pm29F004 is similar as that of
EPROM. To obtain data at the outputs, three control
functions must be satisfied:
• CE# is the chip enable and should be pulled low
( VIL ).
• OE# is the output enable and should be pulled
low ( VIL).
• WE# is the write enable and should remains high
( VIH ).
PRODUCT IDENTIFICATION
The product identification mode can be used to identify
the device and the manufacturer by hardware or soft-
ware operation. The hardware operation mode is acti-
vated by applying a 12.0 Volt on A9 pin, typically used
by an external programmer to select the right program-
ming algorithm for the device. For detail, please see
Bus Operation Modes in Table 3. The software opera-
tion mode is activated by three-bus-cycle command.
Please see Software Command Definition in Table 4.
BOOT BLOCK LOCKOUT
The device has a software lockout feature to pre-
vent the data in the boot block from being erased or
reprogrammed. The boot block can be located at the
top or bottom of the address location. The block size is
16 Kbytes. Once the lockout feature is enable, the boot
block can not be erased or reprogrammed. Data in the
main memory block can still be updated through the
regular programming method. The boot block lockout
feature can be turned on by issuing a six-bus-cycle com-
mand sequence. Please refer to Table 4 and Chart 4.
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
5
Pm29F004 Preliminary
PMC
DEVICE OPERATION (CONTINUED)
BYTE PROGRAMMING
I/O7 DATA# POLLING
The programming is a four-bus-cycle operation
and the data is programmed into the device (to a logical
“0”) on a byte-by-byte basis. Please see Software Com-
mand Definition in Table 4. A program operation is ac-
tivated by writing the three-byte command sequence
followed by one byte of data into the device. The ad-
dress are latched on the falling edge of WE# or CE#
whichever occurs later, and the data is latched on the
rising edge of WE# or CE#, whichever occurs first. The
internal control logic automatically handles the internal
programming voltages and timing.
The Pm29F004 provides Data# Polling feature to
indicate the process or the completion of a program or
erase cycle. During a program cycle, an attempt to read
the device will result in the complement of the last loaded
data on I/O7. Once the program cycle is completed,
the true data of the last loaded data is valid on all out-
puts. During a block or chip erase operation, an attempt
to read the device will result a “0” on I/O7. After the
erase cycle is completed, an attempt to read the device
will result a “1” on I/O7.
A data “0” can not be programmed back to a “1”.
Only erase operation can convert “0”s to “1”s. The Data#
Polling of I/O7 or Toggle Bit of I/O6 can be used to de-
tect when the programming operation is completed.
I/O6 TOGGLE BIT
The Pm29F004 also provides Toggle Bit feature
as a method to detect the process or the end of a pro-
gram or erase cycle. During a program or erase opera-
tion, an attempt to read data from the device will result
in I/O6 toggling between “1” and “0”. When the program
or erase operation is complete, I/O6 will stop toggling
and valid data will be read. Toggle bit may be accessed
at any time during a program or erase cycle.
CHIP ERASE
The entire memory array can be erased through
a chip erase operation. Pre-programs the device is not
required prior to chip erase operation. Chip erase starts
after a six-bus-cycle chip erase command sequence.
All commands will be ignored once the chip erase
operation has started. The device will return back to
read mode after the completion of chip erase. When
the boot block lockout feature is enabled, the boot block
will not be erased during a chip erase operation. Only
the parameter blocks and the main blocks will be erased.
HARDWARE DATA PROTECTION
Hardware data protection protects the device from
unintentional erase or program operation. It is performed
in the following ways: (a) VCC sense: if VCC is below 3.8
V (typical), the program function is inhibited. (b) Write
inhibit: holding any of the signal OE# low, CE# high or
WE# high inhibits a write cycle. (c) Noise filter: pulses
of less than 20 ns (typical) on the WE# or CE# inputs
will not initiate a write cycle.
BLOCK ERASE
The memory array is organized into seven blocks:
one 16 Kbytes boot block, two 8 Kbytes parameter
blocks, one 96 Kbytes and three 128 Kbytes main
blocks. A block erase operation allows to erase any
individual block. Pre-programs the block is not required
prior to block erase operation. If the boot block lockout
feature is enable, the block erase command attempts
to erase the boot block will be ignored. The block erase
command is similar to chip erase command except for
the last bus cycle command where the block addresses
are used to select the block for erasure and the input
data to the I/Os is 30h. Each block erase operation
erases one block. Block erase and chip erase are both
internally controlled and timed.
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
6
Pm29F004 Preliminary
PMC
MEMORY BLOCKS AND ADDRESSES
Table 1. Top Boot Block Address Table (Pm29F004T)
Block
Main Block 4
Block Size
Address Range
00000h-1FFFFh
20000h-3FFFFh
40000h-5FFFFh
60000h-77FFFh
78000h-79FFFh
7A000h-7BFFFh
7C000h-7FFFFh
128 Kbytes
128 Kbytes
128 Kbytes
96 Kbytes
8 Kbytes
Main Block 3
Main Block 2
Main Block 1
Parameter Block 2
Parameter Block 1
Boot Block
8 Kbytes
16 Kbytes
Table 2. Bottom Boot Block Address Table ( Pm29F004B)
Block
Boot Block
Block Size
16 Kbytes
8 Kbytes
Address Range
00000h-03FFFh
04000h-05FFFh
06000h-07FFFh
08000h-1FFFFh
20000h-3FFFFh
40000h-5FFFFh
60000h-7FFFFh
Parameter Block 1
Parameter Block 2
Main Block 1
8 Kbytes
96 Kbytes
128 Kbytes
128 Kbytes
128 Kbytes
Main Block 2
Main Block 3
Main Block 4
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
7
Pm29F004 Preliminary
PMC
OPERATING MODES
Table 3. Bus Operation Modes
Mode
Read
CE#
VIL
VIL
VIH
X
OE#
VIL
VIH
X
WE#
VIH
VIL
X
ADDRESS
I/O
DOUT
X (1)
X
Write
DIN
Standby
X
High Z
High Z
Output Disable
VIH
X
X
(2)
A2 - A18 = X, A9 = VH
A1 = VIL, A0 = VIL
,
Manufacturer Code (3)
Product Identification
Hardware
VIL
VIL
VIH
(2)
A2 - A18 = X, A9 = VH
A1 = VIL, A0 = VIH
,
Device Code (3)
Notes:
1. X can be VIL, VIH or addresses.
2. VH = 12.0 V ± 0.5 V.
3. Manufacturer Code: 9Dh;
Device Code: 1Eh (top boot), 2Eh (bottom boot)
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
8
Pm29F004 Preliminary
PMC
COMMAND DEFINITION
Table 4. Software Command Definition
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cylce
6th Bus
Cycle
Command
Sequence
Bus
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read
1
6
6
Addr DOUT
Chip Erase
Block Erase
555h AAh
555h AAh
2AAh 55h 555h 80h
2AAh 55h 555h 80h
555h AAh
555h AAh
2AAh 55h 555h 10h
2AAh 55h BA (1) 30h
Byte
Program
4
6
555h AAh
555h AAh
2AAh 55h 555h A0h
2AAh 55h 555h 80h
Addr DIN
Boot Block
Lockout (2,3)
555h AAh
2AAh 55h 555h 40h
BA (4) 00h (5)
BA (4) 01h (5)
Boot Block
Lockout
3
555h AAh
2AAh 55h 555h 90h
Detection (3)
Product
Manufacturer ID
3
3
3
3
1
555h AAh
555h AAh
555h AAh
555h AAh
XXXh F0h
2AAh 55h 555h 90h
2AAh 55h 555h 90h
2AAh 55h 555h 90h
2AAh 55h 555h F0h
X00h 9Dh
X01h 1Eh
X01h 2Eh
Product Device
ID (Top Boot)
Product Device
ID (Bottom Boot)
Product ID
Exit (6)
Product ID
Exit (6)
Notes:
1. BA = Block address of the block to be erased.
2. When the boot block lockout feature is enabled, the boot block will not be erased when a chip erase
command or a block erase command for boot block erasure is issued. Once the boot block is not
protected, the boot block will be erased when a chip erase command or a block erase command for
boot block erasure is issued.
3. After completion of the boot block lockout enable or detection command, the Product ID Exit com-
mand must be issued to return to standard read mode.
4. BA = Block address of the boot block;
For top boot block location, A0 = “0”, A1 = “1”, and A14-A18 = “1” where A2-A13 = Don’t Care;
For bottom boot block location, A0 = “0”, A1 = “1”, and A14-A18 = “0” where A2-A13 = Don’t Care.
5. I/O0 = “1” means boot block lockout is enabled, I/O0 = “0” means boot block lockout is disabled.
6. Either one of the Product ID Exit command can be used.
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
9
Pm29F004 Preliminary
PMC
DEVICE OPERATIONS FLOWCHARTS
AUTOMATIC PROGRAMMING
Start
Load Data AAh
to
Address 555H
Load Data 55h
to
Address 2AAh
Load Data A0h
to
Address 555h
Address
Increment
Load Program
Data to
Program Address
I/O7 = Data?
or
I/O6 Stop Toggle?
No
Yes
Last Address?
Yes
No
Programming
Completed
Chart 1. Automatic Programming Flowchart
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
10
Pm29F004 Preliminary
PMC
DEVICE OPERATIONS FLOWCHARTS (CONTINUED)
AUTOMATIC ERASE
Start
Write Chip
or Block
Erase Command
Data = FFh?
or
I/O6 Stop Toggle?
No
Yes
Erasure
Completed
BLOCK ERASE COMMAND
CHIP ERASE COMMAND
Load Data AAh
to
Load Data AAh
to
Address 555h
Address 555h
Load Data 55h
to
Load Data 55h
to
Address 2AAh
Address 2AAh
Load Data 80h
to
Load Data 80h
to
Address 555h
Address 555h
Load Data AAh
to
Address 555h
Load Data AAh
to
Address 555h
Notes:
1. Please see Software Command
Definition in Table 1 and Table
2 for block addresses.
Load Data 55h
to
Address 2AAh
Load Data 55h
to
Address 2AAh
2. Only erase one block per each
block erase cycle.
3. When the boot block lockout
feature has been enabled, the
boot block will not be erased.
Load Data 10h
to
Address 555h
Load Data 30h
to
Block Address
(3)
(1,2,3)
Chart 2. Automatic Erase Flowchart
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
11
Pm29F004 Preliminary
PMC
DEVICE OPERATIONS FLOWCHARTS (CONTINUED)
SOFTWARE PRODUCT IDENTIFICATION EXIT
SOFTWARE PRODUCT IDENTIFICATION ENTRY
Load Data AAh
to
Load Data AAh
to
Address 555h
Address 555h
Load Data 55h
Load Data F0h
Load Data 55h
to
Address 2AAh
to
to
Address 2AAh
Address XXXh
or
Load Data F0h
Exit Product
Load Data 90h
to
Address 555h
to
Identification
(3)
Address 555h
Mode
Enter Product
Identification
Mode
Exit Product
Identification
Mode
(1,2)
(3)
Notes:
1. Manufacturer Code is read when A0-A18 = XX00h, where X = Don’t Care;
Device Code is read when A0-A18 = XX01h.
2. Manufacturer Code = 9Dh;
Device Code = 1Eh (top boot device);
Device Code = 2Eh (bottom boot device).
3. The device returns to standard read operation.
Chart 3. Software Product Identification Entry/Exit Flowchart
12
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
Pm29F004 Preliminary
PMC
DEVICE OPERATIONS FLOWCHARTS (CONTINUED)
BOOT BLOCK LOCKOUT ENABLE (1,2)
Load Data AAh
to
Address 555h
Load Data 55h
to
Address 2AAh
Notes:
Load Data 80h
1. Please call manufacturer for the command code to
disable the boot block lockout.
2. After excuting the boot block lockout command, the
Product ID Exit command must be issued to return
to standard read mode.
to
Address 555h
Load Data AAh
to
Address 555h
Load Data 55h
to
Address 2AAh
Load Data 40h
to
Address 555h
Pause 500 ms
Boot Block
Lockout Enabled
Chart 4. Boot Block Lockout Enable Flowchart
13
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
Pm29F004 Preliminary
PMC
ABSOLUTE MAXIMUM RATINGS (1)
Temperature Under Bias
-65OC to +125OC
Storage Temperature
-65OC to +125OC
-0.5 V to +6.25 V
-0.5 V to +13.0 V
-0.5 V to VCC + 0.6 V
-0.5 V to +6.25 V
Input Voltage with Respect to Ground on All Pins except A9 pin (2)
Input Voltage with Respect to Ground on A9 pin (3)
All Output Voltage with Respect to Ground
(2)
VCC
Notes:
1. Stresses under those listed in “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only. The functional operation of the device
or any other conditions under those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating condition for extended periods
may affected device reliability.
2. Maximum DC voltage on input or I/O pins are +6.25 V. During voltage transitioning period,
input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns. Minimum
DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O
pins may undershoot GND to -2.0 V for a period of time up to 20 ns.
3. Maximum DC voltage on A9 pin is +13.0 V. During voltage transitioning period, A9 pin
may overshoot to +14.0 V for a period of time up to 20 ns. Minimum DC voltage on A9 pin
is -0.5 V. During voltage transitioning period, A9 pin may undershoot GND to -2.0 V for a
period of time up to 20 ns.
DC AND AC OPERATING RANGE
Part Number
Pm29F004
0oC to 70oC
4.5 V - 5.5 V
Operating Temperature
Vcc Power Supply
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
14
Pm29F004 Preliminary
PMC
DC CHARACTERISTICS
Symbol
ILI
Parameter
Condition
Min
Typ
Max
Units
Input Load Current
VIN= 0 V to VCC, VCC = VCC max
1
µA
ILO
Output Leakage Current
VI/O = 0 V to VCC, VCC = VCC max
1
µA
µA
mA
mA
mA
V
ISB1
ISB2
ICC1
ICC2
VIL
VCC Standby Current CMOS CE#, OE# = VCC ± 0.5 V
0.1
0.2
15
5
3
VCC Standby Current TTL
VCC Active Read Current
VCC Program/Erase Current
Input Low Voltage
CE# = VIH to VCC
f = 5 MHz; IOUT = 0 mA
30
(1)
40
60
-0.5
2.0
0.8
VIH
VOL
VOH
Input High Voltage
VCC + 0.5
0.45
V
Output Low Voltage
IOL = 12 mA, VCC = VCC min
V
Output High Voltage
IOH = −2.5 mA, VCC = VCC min
2.4
V
Note: 1. Characterized but not 100% tested.
AC CHARACTERISTICS
READ OPERATIONS CHARACTERISTICS
Pm29F004-70
Pm29F004-90
Symbol
Parameter
Units
Min
Max
Min
Max
tRC
tACC
tCE
tOE
tDF
Read Cycle Time
70
90
ns
ns
ns
ns
ns
Address to Output Delay
CE# to Output Delay
70
70
35
25
90
90
40
30
OE# to Output Delay
CE# or OE# to Output High Z
0
0
0
0
Output Hold from OE#, CE# or
Address, whichever occured first
tOH
ns
µs
tVCS
VCC Set-up Time
50
50
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
15
Pm29F004 Preliminary
PMC
AC CHARACTERISTICS (CONTINUED)
READ OPERATIONS AC WAVEFORMS
tRC
ADDRESS
ADDRESS VALID
tACC
tCE
CE#
OE#
tOE
tDF
W E #
tOH
HIGH
Z
OUTPUT
VALID
OUTPUT
tVCS
VCC
OUTPUT TEST LOAD
INPUT TEST WAVEFORMS
AND MEASUREMENT LEVEL
5.0 V
1.8 K
3.0 V
AC
OUTPUT PIN
Input
1.5 V
Measurement
Level
0.0 V
1.3 K
100 pF
PIN CAPACITANCE ( f = 1 MHz, T = 25°C )
Typ
4
Max
6
Units
Conditions
CIN
pF
pF
VIN = 0 V
COUT
8
12
VOUT = 0 V
Note: These parameters are characterized and are not 100% tested.
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
16
Pm29F004 Preliminary
PMC
AC CHARACTERISTICS (CONTINUED)
WRITE (PROGRAM/ERASE) OPERATIONS CHARACTERISTICS
Pm29F004-70
Pm29F004-90
Units
Symbol
Parameter
Write Cycle Time
Min
70
0
Max
Min
90
0
Max
tWC
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
µs
Address Set-up Time
Address Hold Time
CE# Set-up Time
tAH
tCS
tCH
tWS
tWH
tDS
tDH
tWP
tWPH
tBP
45
0
50
0
CE# Hold Time
0
0
WE# Set-up Time
WE# Hold Time
0
0
0
0
Data Set-up Time
30
0
45
0
Data Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Time
Chip or Block Erase Cycle Time
VCC Set-up Time
35
20
45
20
50
50
tEC
tVCS
100
100
50
50
PROGRAM OPERATIONS AC WAVEFORMS - WE# CONTROLLED
Program Cycle
OE#
tCH
tVCS
CE#
tCS
tBP
tWPH
tW P
WE#
tAH
555
tW C
tAS
A0 - A17
2AA
555
tDH
ADDRESS
tDS
INPUT
DATA
VALID
DATA
DATA IN
VCC
AA
55
A0
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
17
Pm29F004 Preliminary
PMC
AC CHARACTERISTICS (CONTINUED)
PROGRAM OPERATIONS AC WAVEFORMS - CE# CONTROLLED
Program Cycle
OE#
tW H
tVCS
W E #
tW S
tBP
tWPH
tW P
CE#
A0 - A17
DATA IN
VCC
tAH
555
tW C
tAS
2AA
555
tDH
ADDRESS
tDS
INPUT
DATA
VALID
DATA
AA
55
A0
CHIP ERASE OPERATIONS AC WAVEFORMS
OE#
tVCS
CE#
tW P
tWPH
W E #
tAS
tAH
tDH
555
555
tW C
2AA
555
2AA
555
10
AO - A17
tEC
tDS
AA
55
80
AA
55
DATA IN
VCC
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
18
Pm29F004 Preliminary
PMC
AC CHARACTERISTICS (CONTINUED)
BLOCK ERASE OPERATIONS AC WAVEFORMS
OE#
tVCS
CE#
tW P
tWPH
W E #
tAS
tAH
555
tW C
tDH
BLOCK
ADDRESS
2AA
555
555
2AA
55
AO - A17
tEC
tDS
AA
55
80
AA
30
DATA IN
VCC
PROGRAM/ERASE PERFORMANCE
Parameter
Unit
Min
Typ
50
Max
100
100
50
Remarks
From writing erase command
to erase completion
Block Erase Time
ms
ms
µs
From writing erase command
to erase completion
Chip Erase Time
50
Excludes the time of four-cycle
program command execution
Byte Programming Time
Program/Erase Endurance
12
Cycles
10,000
50,000
Note: These parameters are characterized and are not 100% tested.
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
19
Pm29F004 Preliminary
PMC
AC CHARACTERISTICS (CONTINUED)
TOGGLE BIT AC WAVEFORMS
W E #
tOEH
CE#
OE#
tDF
tOE
tOH
STOP
TOGGLING
VALID
DATA
DATA
TOGGLE
TOGGLE
I/O6
Note: Toggling either CE#, OE# or both OE# and CE# will operate Toggle Bit.
DATA# POLLING AC WAVEFORMS
W E #
CE#
tCH
tCE
tOEH
OE#
I/O7
tOE
tDF
I/O7#
VALID DATA
tOH
Note: Toggling either CE#, OE# or both OE# and CE# will operate Data# Polling.
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
20
Pm29F004 Preliminary
PMC
PACKAGE TYPE INFORMATION
32P
32-Pin Plastic DIP Dimensions in Inches (Millimeters)
1.640(41.7)
1.680(42.7)
.600(15.24)
.625(15.88)
32
17
16
.008(0.20)
.013(0.33)
.537(13.64)
.557(14.05)
.625(15.88)
.665(16.89)
Pin 1 I.D.
0°
10°
.005(.127)
MIN
.040(1.02)
.065(1.65)
.146(3.71)
.162(4.11)
SEATING PLANE
.090(2.29)
.110(2.79)
.014(.36)
.022(.56)
.120(3.05)
.160(4.07)
.015(.38) MIN
32J
32-Pin Plastic Leaded Chip Carrier Dimensions in Inches (Millimeters)
.485(12.32)
.495(12.51)
.447(11.35)
.453(11.51)
.009
.015
025(.635)X30°
.585(14.86)
.595(15.11)
.123(3.12)
.140(3.56)
Pin 1 I.D.
.076(1.93)
.095(2.41)
.547(13.89)
.553(14.05)
SEATING
PLANE
.400
REF.
.510(12.95)
.530(13.46)
.013(.33)
.021(.53)
.050 REF.
.026(.66)
.032(.81)
TOP VIEW
SIDE VIEW
Issue Date: November, 2000 Rev: 1.0
Programmable Microelectronics Corp.
21
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