TIC106 [POINN]
SILICON CONTROLLED RECTIFIERS; 可控硅整流器器
| 型号： | TIC106 |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | SILICON CONTROLLED RECTIFIERS |
| 文件： | 总8页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright © 1997, Power Innovations Limited, UK
APRIL 1971 - REVISED MARCH 1997
●
●
●
●
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5 A Continuous On-State Current
30 A Surge-Current
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
K
A
G
1
2
3
400 V to 800 V Off-State Voltage
Max I of 200 µA
GT
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIC106D
TIC106M
TIC106S
TIC106N
TIC106D
TIC106M
TIC106S
TIC106N
400
600
700
800
400
600
700
800
5
Repetitive peak off-state voltage (see Note 1)
VDRM
V
Repetitive peak reverse voltage
VRRM
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
IT(RMS)
IT(AV)
A
A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
3.2
Surge on-state current (see Note 4)
ITM
IGM
30
0.2
A
Peak positive gate current (pulse width £ 300 ms)
Peak gate power dissipation (pulse width £ 300 ms)
Average gate power dissipation (see Note 5)
Operating case temperature range
A
PGM
PG(AV)
TC
1.3
W
W
°C
°C
°C
0.3
-40 to +110
-40 to +125
230
Storage temperature range
Tstg
TL
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kW.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
IDRM
VD = rated VDRM
RGK = 1 kW
TC = 110°C
TC = 110°C
400
mA
IRRM
IGT
VR = rated VRRM
VAA = 6 V
IG = 0
1
mA
RL = 100 W
RL = 100 W
RGK = 1 kW
RL = 100 W
RGK = 1 kW
RL = 100 W
RGK = 1 kW
tp(g) ³ 20 ms
60
200
1.2
mA
VAA = 6 V
TC = - 40°C
tp(g) ³ 20 µs
VAA = 6 V
VGT
Gate trigger voltage
Holding current
0.4
0.2
0.6
1
V
tp(g) ³ 20 µs
VAA = 6 V
TC = 110°C
TC = - 40°C
tp(g) ³ 20 µs
VAA = 6 V
R
GK = 1 kW
8
5
Initiating IT = 10 mA
VAA = 6 V
IH
mA
R
GK = 1 kW
Initiating IT = 10 mA
Peak on-state
voltage
VTM
ITM = 5 A
(See Note 6)
1.7
V
Critical rate of rise of
off-state voltage
dv/dt
VD = rated VD
RGK = 1 kW
TC = 110°C
10
V/µs
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
3.5
°C/W
°C/W
62.5
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
Gate-controlled
turn-on time
tgt
tq
IT = 5 A
IG = 10 mA
See Figure 1
See Figure 2
1.75
µs
Circuit-commutated
turn-off time
IT = 5 A
IG = 10 mA
7.7
µs
IRM = 8 A
P R O D U C T
I N F O R M A T I O N
2
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
IT
W
6
VG
VA
DUT
10%
tgt
RG
G
VG
VA
IG
90%
PMC1AA
Figure 1. Gate-controlled turn-on time
30 V
m
0.1
F
W
6
R2
R1
m
to 0.5
F
NOTES: A. Resistor R1 is adjusted for the specified value
of IRM
.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
IA
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
tP = 50 µs to 300 µs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
VA
DUT
TH1
RG
RG
G1
G2
VK
VG1
VG2
(IRM Monitor)
IG
IG
³
pulse amplitude, VG, of 20 V and duration of
10 µs to 20 µs.
W
0.1
G2 tP Synchronisation
VG1
VG2
IT
tP
IA
0
IRM
VA
VT
0
tq
PMC1AB
Figure 2. Circuit-commutated turn-off time
P R O D U C T
I N F O R M A T I O N
3
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
AVERAGE ANODE ON-STATE CURRENT
DERATING CURVE
MAX CONTINUOUS ANODE POWER DISSIPATED
vs
CONTINUOUS ON-STATE CURRENT
TI20AA
TI20AB
6
5
4
3
2
1
0
100
TJ = 110°C
Continuous DC
F = 180º
10
0°
180°
F
Conduction
Angle
1
30
40
50
60
70
80
90
100 110
1
10
100
TC - Case Temperature - °C
IT - Continuous On-State Current - A
Figure 3.
Figure 4.
SURGE ON-STATE CURRENT
vs
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
CYCLES OF CURRENT DURATION
TI20AC
TI20AD
100
10
1
10
TC £ 80 °C
No Prior Device Conduction
Gate Control Guaranteed
1
0·1
1
10
100
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 5.
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 6.
P R O D U C T
I N F O R M A T I O N
4
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC20AA
TC20AB
1
0·8
0·6
0·4
0·2
0
VAA = 6 V
VAA = 6 V
R = 100
W
R = 100
W
L
L
tp(g) ³ 20 µs
RGK = 1 kW
tp(g) ³ 20 µs
100
10
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
TC - Case Temperature - °C
TC - Case Temperature - °C
Figure 7.
Figure 8.
HOLDING CURRENT
vs
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
CASE TEMPERATURE
TC20AD
TC20AC
10
10
IA = 0
VAA = 6 V
TC = 25 °C
RGK = 1 kW
tp = 300 µs
Initiating IT = 10 mA
Duty Cycle £ 2 %
1
1
-50
0·1
0·1
-25
0
25
50
75
100
125
1
10
100
1000
TC - Case Temperature - °C
IGF - Gate Forward Current - mA
Figure 9.
Figure 10.
P R O D U C T
I N F O R M A T I O N
5
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE
vs
GATE-CONTROLLED TURN-ON TIME
vs
GATE CURRENT
PEAK ON-STATE CURRENT
TC20AF
TC20AE
2.5
2.0
1.5
1.0
0.5
0.0
10.0
8.0
6.0
4.0
2.0
0.0
VAA = 30 V
RL = 6 W
TC = 25 °C
tp = 300 µs
TC = 25 °C
Duty Cycle 2 %
£
See Test Circuit and Waveforms
0·1
1
10
0·1
1
10
ITM - Peak On-State Current - A
IG - Gate Current - mA
Figure 11.
Figure 12.
CIRCUIT-COMMUTATED TURN-OFF TIME
vs
CASE TEMPERATURE
TC20AG
16
14
12
10
8
VAA = 30 V
RL = 6 W
IRM » 8 A
See Test Circuit and Waveforms
6
4
2
0
20
40
60
80
100
120
TC - Case Temperature - °C
Figure 13.
P R O D U C T
I N F O R M A T I O N
6
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
7
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
8
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