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F2013 [POLYFET]

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管

F2013


元器件型号：	F2013
生产厂家：	POLYFET RF DEVICES
描述和应用：	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管晶体晶体管栅
PDF文件：	总2页 (文件大小：41K)
下载文档：	下载PDF数据表文档文件
型号参数：F2013参数

F2013ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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35 MPD

F2014ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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12 MPD

F2015ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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37 MPD

F2016ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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24 MPD

F2017ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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19 MPD

F20-1800

Split Bobbin Power Transformer, 36VA, ROHS COMPLIANT

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1 TRIAD

F20-1800-C2

Split Bobbin Power Transformer, 36VA, ROHS COMPLIANT

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1 TRIAD

F20-1800-C2-B

Split Bobbin Power Transformer, 36VA, ROHS COMPLIANT

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1 TRIAD

F2018ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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18 MPD

F2019ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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22 MPD

F2021

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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87 POLYFET

F2021ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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14 MPD

F2022ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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40 MPD

F2023ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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32 MPD

F2024ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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15 MPD

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