ADT461S24 [POSEICO]

PHASE CONTROL MODULE;


型号：	ADT461S24
厂家：	POWER SEMICONDUCTORS
描述：	PHASE CONTROL MODULE
文件：	总4页 (文件大小：165K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

POSEICO SPA

Via Pillea 42-44, 16153 Genova - ITALY

Tel. + 39 010 8599400 - Fax + 39 010 8682006

Sales Office:

Tel. + 39 010 8599400 - sales@poseico.com

PHASE CONTROL MODULE

ADT461

Repetitive voltage up to

Mean forward current

Surge current

2400 V

462 A

12 kA

FINAL SPECIFICATION

apr 17 - ISSUE : 02

[°C]

Symbol

Characteristic

Conditions

Value

Unit

BLOCKING

V RRM

Repetitive peak reverse/off-state voltage

Non-repetitive peak reverse voltage

Repetitive peak reverse/off-state current

125

2400

2500

V RSM

RRM/DRM

CONDUCTING

T (AV)

Mean forward current

180° sin, 50 Hz, Th=85°C, double side cooled

180° sin, 50 Hz, Tc=55°C, double side cooled

462

T (AV)

TSM

Mean forward current

Surge forward current

I² t

687

Sine wave, 10 ms

without reverse voltage

125

x 10³

I² t

720

2,00

A²s

V T

On-state voltage

Threshold voltage

On-state slope resistance

On-state current =

1600 A

V T(TO)

125

1,10

0,552

mohm

SWITCHING

From 75% VDRM up to 1050 A; gate 10V, 5W

di/dt

Critical rate of rise of on-state current, min.

125

200

A/µs

dv/dt

Critical rate of rise of off-state voltage, min.

Gate controlled delay time, typical

Circuit commutated turn-off time, typical

Reverse recovery charge

Linear ramp up to 70% of VDRM

125

500

1,1

V/µs

µs

VD=100V; gate source 25V, 10W , tr=.5 µs

dv/dt = 20 V/µs linear up to 75% VDRM

di/dt = -20 A/µs, I= 700 A

VR= 50 V

200

µs

Q rr

125

µC

Peak reverse recovery current

Holding current, typical

VD=5V, gate open circuit

VD=5V, tp=30µs

300

700

Latching current, typical

GATE

V GT

Gate trigger voltage

VD=5V

3,50

Gate trigger current

VD=5V

250

0,25

V GD

Non-trigger gate voltage, min.

Peak gate voltage (forward)

Peak gate current

VD=VDRM

125

V FGM

FGM

V RGM

P GM

P G

Peak gate voltage (reverse)

Peak gate power dissipation

Average gate power dissipation

Pulse width 100 µs

150

MOUNTING

R th(j-h)

Thermal impedance, DC

Junction to case, per element

Case to heatsink, per element

50,0

°C/kW

R th(c-h)

T j

Thermal impedance

Operating junction temperature

RMS insulation voltage

Mounting torque

20,0

-30 / 125

4500

°C/kW

°C

V ins

50 hz , circuit to base, all terminal shorted

Case to heatsink

4 to 6

Mounting torque

Busbars to terminal

12 to 18

1500

Mass

ORDERING INFORMATION : ADT461 S 24

VRRM/100

standard specification

ADT461 PHASE CONTROL MODULE

FINAL SPECIFICATION apr 17 - ISSUE : 02

DISSIPATION CHARACTERISTICS

SQUARE WAVE

Tcase [°C]

130

125

120

115

110

105

100

30°

60°

90° 120°

180°

100

200

300

400

500

600

IF(AV) [A]

PF(AV) [W]

900

800

700

600

500

400

300

200

100

180°

120°

90°

60°

30°

100

200

300

400

500

600

IF(AV) [A]

ADT461 PHASE CONTROL MODULE

FINAL SPECIFICATION apr 17 - ISSUE : 02

DISSIPATION CHARACTERISTICS

SINE WAVE

Tcase [°C]

130

125

120

115

110

105

100

30°

60°

90°

120°

180°

100

200

300

400

500

600

IF(AV) [A]

PF(AV) [W]

900

800

700

600

500

400

300

200

100

180°

120°

90°

60°

30°

100

200

300

400

500

600

IF(AV) [A]

ADT461 PHASE CONTROL MODULE

FINAL SPECIFICATION apr 17 - ISSUE : 02

ON-STATE CHARACTERISTIC

Tj = 125 °C

SURGE CHARACTERISTIC

Tj = 125 °C

1600

1400

1200

1000

800

600

400

200

0,5

1,5

100

On-State Voltage [V]

n° cycles

TRANSIENT THERMAL IMPEDANCE

0,001

0,01

0,1

100

t[s]

Distributed by

All the characteristics given in this data sheet are guaranteed only with uniform clamping force,

cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm.

In the interest of product improvement POSEICO SpA reserves the right to change any data

given in this data sheet at any time without previous notice.

If not stated otherwise the maximum value of ratings (simbols over shaded background) and

characteristics is reported.

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