select brandShort,logo,brand from pdf_brand where id=187 limit 1 IMX7_技术文档

IMX7 [POWER-ONE]

7 Watt DC-DC Converters; 7瓦DC- DC转换器
IMX7
型号: IMX7
厂家: POWER-ONE    POWER-ONE
描述:

7 Watt DC-DC Converters
7瓦DC- DC转换器

晶体 转换器 晶体管 光电二极管 放大器
文件: 总4页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IMX7T108

Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 2-Element, NPN, Silicon

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IMX7T109

Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 2-Element, NPN, Silicon

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IMX8

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IMX8

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IMX8-7

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IMX8T108

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IMX8T109

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IMX8_1

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IMX9T108

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IMYH200R012M1H

The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

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IMYH200R024M1H

The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

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IMYH200R050M1H

The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

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IMYH200R075M1H

The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.

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