PP150B120-ND [POWEREX]

H-Bridge POW-R-PAK IGBT Assembly 150 Amperes/1200 Volts; H桥POW -R - PAK IGBT大会150安培/ 1200伏
PP150B120-ND
型号: PP150B120-ND
厂家: POWEREX POWER SEMICONDUCTORS    POWEREX POWER SEMICONDUCTORS
描述:

H-Bridge POW-R-PAK IGBT Assembly 150 Amperes/1200 Volts
H桥POW -R - PAK IGBT大会150安培/ 1200伏

双极性晶体管
文件: 总5页 (文件大小:583K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PP150B120-ND  
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272  
www.pwrx.com  
H-Bridge POW-R-PAK™  
IGBT Assembly  
150 Amperes/1200 Volts  
R
J
N (4 PLACES)  
+DC  
H
F
M (6 PLACES)  
PIN 1  
L
E
K
S
H
G
–DC  
P
B
A
Q
C
Description:  
D
T
The Powerex POW-R-PAK™ is a configurable IGBT  
based power assembly that may be used as a converter,  
chopper, half or full bridge, or three phase inverter for  
motor control, power supply, UPS or other power  
conversion applications.  
+DC  
C1  
C1  
The power assembly is mounted on a forced air-cooled  
heatsink and features state-of-the-art Powerex IGBTs  
with low conduction and low switching losses for high  
efficiency operation. The POW-R-PAK™ includes a low  
inductance laminated bus structure, optically isolated  
gate drive interfaces, isolated gate drive power supplies,  
and a DC-link capacitor bank. The control board  
provides a simple user interface along with built-in  
protection features including overvoltage, undervoltage  
lockout, overcurrent, overtemperature, and short circuit  
detection.  
G1  
E1  
G1  
E1  
1
2
G2  
G2  
E2  
E2  
E2  
E2  
-DC  
Gate Driver Board  
P1  
Customer Interface (See Table 1)  
Depending on application characteristics, the POW-R-  
PAK™ is suitable for operation with DC bus voltages up  
to 800VDC and switching frequencies below 20kHz.  
Outline Drawing and Circuit Diagram  
Dim.  
A
B
C
D
E
F
G
H
Inches  
14.9  
14.25  
7.6  
5.43  
10.15  
7.2  
2.01  
0.79  
0.3  
mm  
378.4  
362.0  
193.0  
138.0  
257.8  
183.0  
51.0  
Dim.  
K
L
M
N
P
Q
R
S
Inches  
5.91  
8.0  
M6 Metric  
0.256 Dia.  
1.0  
0.32  
14.32  
2.05  
mm  
150.0  
203.2  
M6  
6.5 Dia.  
25.4  
8.2  
363.6  
52.0  
Features:  
£ High performance IGBT inverter bridge  
£ Integrated gate drive with fault monitoring and  
protection  
£ System status / troubleshooting LEDs to verify  
or monitor proper operation  
£ Isolated gate drive power supplies  
£ Low inductance laminated bus  
£ Output current measurement and feedback  
£ Superior short circuit detection & shoot through  
prevention  
20.0  
J
7.7  
T
5.4  
137.1  
01/14 Rev. 0  
1
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com  
PP150B120-ND  
H-Bridge POW-R-PAK™ IGBT Assembly  
150 Amperes/1200 Volts  
Absolute Maximum Ratings, T = 25°C unless otherwise specified  
j
Module  
Characteristics  
Symbol  
Rating  
-40 to +150  
-40 to +65  
-20 to +60  
900  
Units  
°C  
IGBT Junction Temperature  
Storage Temperature  
T
j
T
°C  
stg  
Operating Temperature  
T
op  
°C  
Voltage Applied to DC Terminals  
Isolation Voltage, Main Terminals to Heatsink  
V
CC  
Volts  
Volts  
V
2500  
iso  
IGBT Part  
Characteristics  
Symbol  
Rating  
150  
Units  
Collector Current (DC, T = 83°C)  
C'  
I
C
Amperes  
Amperes  
Amperes  
Amperes  
Watts  
Peak Collector Current  
I
300  
150  
CM  
Emitter Current (T = 25°C)  
C
I
E
Peak Emitter Current  
I
300  
960  
EM  
Maximum Collector Dissipation (T < 150°C per Module)  
j
P
C
Interface Board  
Characteristics  
Symbol  
Rating  
30  
Units  
Volts  
Volts  
Volts  
mA  
Unregulated +24V Power Supply Input  
IGBT Command Signal Input Voltage  
Fault Output Supply Voltage  
Fault Output Current  
20  
30  
50  
2
01/14 Rev. 0  
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com  
PP150B120-ND  
H-Bridge POW-R-PAK™ IGBT Assembly  
150 Amperes/1200 Volts  
Electrical Characteristics, T = 25°C unless otherwise specified  
j
IGBT Part  
Characteristics  
Symbol  
Test Conditions  
= V , V = 0V  
Min.  
Typ.  
Max.  
Units  
Collector Cutoff Current  
I
V
2.1  
2.4  
1.0  
3.0  
mA  
Volts  
Volts  
Volts  
Ns  
CES  
CE  
CES GE  
= 150A, T = 25°C  
Collector-Emitter Saturation Voltage  
V
I
CE(sat)  
C
j
I
= 150A, T = 125°C  
j
C
Emitter-Collector Voltage  
Turn-on Delay Time  
Rise Time  
V
I
E
= 150A  
3.8  
130  
100  
450  
350  
150  
EC  
t
d(on)  
t
V
CC  
= 600V, I = 150A, V  
= 15V,  
= 1.6Ω, Inductive Load  
G
Ns  
r
C
GE  
Turn-off Delay Time  
Fall Time  
t
R
Ns  
d(off)  
t
f
Ns  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
t
I
= 150A  
= 150A  
Ns  
rr  
E
Q
I
E
9.0  
μC  
rr  
Interface Board  
Characteristics  
Min.  
Typ.  
Max.  
Units  
Unregulated +24V Power Supply Input  
Power Supply Current Consumption  
IGBT Command Signal ON Threshold  
IGBT Command Signal OFF Threshold  
IGBT Command Signal Input Impedance  
IGBT Command Signal Input Capacitance  
Dead Time  
20  
12  
24  
15  
0
30  
800  
2
Volts  
mA  
Volts  
Volts  
kΩ  
10  
1
nF  
3.0  
μs  
Feedback Signal and Fault Characteristics  
Characteristics  
Min.  
Typ.  
Max.  
Units  
Output Over Current Trip  
Heatsink Over Temperature Trip  
Bus Over Voltage Trip  
250  
95  
Amperes  
°C  
920  
Volts  
Volts  
μs  
Power Supply Under Voltage Trip  
Fault Reset Time  
18.9  
9
Heatsink Temperature Feedback  
Output Current Feedback (Bipolar)  
DC Link Feedback  
0.1 V/°C  
0.01 V/Amp  
0.01 V/V  
Volts  
Volts  
Volts  
01/14 Rev. 0  
3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com  
PP150B120-ND  
H-Bridge POW-R-PAK™ IGBT Assembly  
150 Amperes/1200 Volts  
Electrical Characteristics, T = 25°C unless otherwise specified  
j
Other Electrical Component Specifications  
Characteristics  
Min.  
Typ.  
Max.  
Units  
DC Link Capacitor Bank  
Total Nominal Capacitance  
2300  
11.6  
1000  
10  
μF  
Nominal Ripple Current Rating per Capacitor (@ 85°C, 120Hz)  
Nominal Total Voltage Rating  
A
RMS  
Volts  
Minimum Life @ Nominal Ripple Current (80°C)  
khrs  
Output Current Sensor  
Primary Current Measuring Range  
±200  
< ±1  
< ±1  
< 5  
25  
Amperes  
Accuracy (@ I , 25°C)  
PN  
%
%
Linearity Error  
Response Time  
Bandwidth (-3 dB)  
μs  
DC  
kHz  
Thermal Characteristics, T = 25°C unless otherwise specified  
j
Characteristics  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
IGBT Thermal Resistance, Junction-to-Case  
FWD Thermal Resistance, Junction-to-Case  
Contact Thermal Resistance  
R
Q
Per IGBT, 1/2 Module  
Per FWD, 1/2 Module  
Per 1/2 Module  
0.13  
0.23  
°C/W  
°C/W  
°C/W  
°C/W  
th(j-c)  
R
D
th(j-c)  
R
0.022  
0.037  
th(c-f)  
Heatsink Thermal Resistance  
R
286 CFM Airflow  
th(f-a)  
Mechanical Characteristics, T = 25°C unless otherwise specified  
j
Characteristics  
Min.  
Typ.  
Max.  
Units  
Mounting Torque, Output Power Terminals  
Mounting Torque, DC Bus Terminals  
Weight  
75  
130  
39  
90  
150  
in-lb  
in-lb  
lb  
Relevant Standards  
UL508C: Power Conversion Equipment  
EN50178: Electronic Equipment for Use in Power Installations  
4
01/14 Rev. 0  
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com  
PP150B120-ND  
H-Bridge POW-R-PAK™ IGBT Assembly  
150 Amperes/1200 Volts  
Interface Board Signal Defintions (Table 1)  
Pin  
Signal Name  
Description  
1
2
3
Shield  
Internally Conected to PGND  
Gate 1 Neg.  
0-15V Signal Controlling, Lower IGBT, HIGH = IGBT on  
Open Collector Output, External Pull-up Resistor Required  
LOW = No Error; HIGH = Phase A Over Current or Short Circuit OR Power Supply UV  
0-15V Signal Controlling, Upper IGBT, HIGH = IGBT on  
0-15V Signal Controlling, Lower IGBT, HIGH = IGBT on  
Open Collector Output, External Pull-up Resistor Required  
LOW = No Error; HIGH = Phase A Over Current or Short Circuit OR Power Supply UV  
0-15V Signal Controlling, Upper IGBT, HIGH = IGBT on  
No Connect - Do Not Ground  
1
Leg 1 Error  
4
5
6
Gate 1 Pos.  
Gate 2 Neg.  
1
Leg 2 Error  
7
8
Gate 2 Pos.  
N/C  
9
N/C  
No Connect - Do Not Ground  
10  
11  
N/C  
No Connect - Do Not Ground  
1
Over Temperature  
Open Collector Output, External Pull-up Resistor Required  
LOW = No Error; HIGH = Heatsink OT  
3
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
25  
External Fault Reset  
DC Link Voltage  
24 VDC Input Power  
24 VDC Input Power  
N/C  
Active Low: Must be High for Operation; Low for 10microseconds to Reset Faults  
Analog Voltage Feedback of DC Link Voltage  
20-30 VDC Input Power Supply  
20-30 VDC Input Power Supply  
No Connect - Do Not Ground  
N/C  
No Connect - Do Not Ground  
PGND  
Ground Reference for 24 VDC Power Supply  
Ground Reference for 24 VDC Power Supply  
Analog Voltage Representation of Heatsink Temperature  
Tied to Pins 10 and 11  
PGND  
Heatsink Temperature  
2
AGND  
I
Phase A  
2
Analog Voltage Representation of Output Current  
Tied to Pins 10 and 11  
OUT  
AGND  
I
Phase B  
2
Analog Voltage Representation of Output Current  
Tied to Pins 10 and 11  
OUT  
AGND  
N/C  
No Connect - Do Not Ground  
1. Open collectors can be pulled up to 30V max. and sink 50mA continuous.  
2. AGND signals to be used for analog feedback signals (i.e. twisted pair with I  
Phase A).  
OUT  
3. On the board is a jumper that enables fault reset by bringing all leg control signals low for 10 microseconds (default).  
Interface Board Connector  
Description  
Symbol  
Type  
Manufacturer  
Gate Drive Board Interface Header  
Recommended Mating Socket  
Recommended Strain Relief  
P1  
0.100" x 0.100" Latching Header, 26 Pin  
0.100" x 0.100" IDC Socket, 26 Pin  
Plastic Strain Relief  
3M# 3429-6002 or Equivalent  
3M# 3499-7600 or Equivalent  
3M# 3448-3026 or Equivalent  
01/14 Rev. 0  
5

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